公开(公告)号：US20230268466A1

公开(公告)日：2023-08-24

申请号：US18305956

申请日：2023-04-24

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xiaoliang LIU ,  Anhe HE ,  Kang-wei PENG ,  Su-hui LIN ,  Ling-yuan HONG ,  Chia-hung CHANG

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/46

CPC classification number: H01L33/405 ,  H01L33/382 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

公开(公告)号：US20220123176A2

公开(公告)日：2022-04-21

申请号：US17064250

申请日：2020-10-06

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xiaoliang LIU ,  Anhe HE ,  Kang-wei PENG ,  Su-hui LIN ,  Ling-yuan HONG ,  Chia-hung CHANG

IPC: H01L33/40 ,  H01L33/46 ,  H01L33/38

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

公开(公告)号：US20210066549A1

公开(公告)日：2021-03-04

申请号：US17064250

申请日：2020-10-06

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xiaoliang LIU ,  Anhe HE ,  Kang-wei PENG ,  Su-hui LIN ,  Ling-yuan HONG ,  Chia-hung CHANG

IPC: H01L33/40 ,  H01L33/46 ,  H01L33/38

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.