公开(公告)号：US20180102461A1

公开(公告)日：2018-04-12

申请号：US15817216

申请日：2017-11-19

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Huining WANG ,  Sheng-hsien HSU ,  Kang-wei PENG ,  Su-hui LIN ,  Chen-ke HSU

IPC: H01L33/42 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01L25/075

CPC classification number: H01L33/42 ,  H01L25/0753 ,  H01L33/007 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/14 ,  H01L33/32 ,  H01L2933/0016

Abstract: A light-emitting diode includes from bottom to up: a substrate; a light-emitting epitaxial layer laminated by semiconductor material layers over the substrate; a current spreading layer doped with conductive metal nanomaterial groups over the light-emitting epitaxial layer; and metal nanomaterial groups with high visible light transmittance over the current spreading layer. The conductive metal nanomaterial groups dispersed inside the ITO current spreading layer can reduce horizontal resistance of the current spreading layer and improve horizontal spreading uniformity of current; and metal nanomaterial groups with high visible light transmittance are distributed over the upper surface of the current expansion layer for roughening and increasing light extract efficiency.

公开(公告)号：US20230268466A1

公开(公告)日：2023-08-24

申请号：US18305956

申请日：2023-04-24

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xiaoliang LIU ,  Anhe HE ,  Kang-wei PENG ,  Su-hui LIN ,  Ling-yuan HONG ,  Chia-hung CHANG

IPC: H01L33/40 ,  H01L33/38 ,  H01L33/46

CPC classification number: H01L33/405 ,  H01L33/382 ,  H01L33/46 ,  H01L2933/0016 ,  H01L2933/0025

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

公开(公告)号：US20220123176A2

公开(公告)日：2022-04-21

申请号：US17064250

申请日：2020-10-06

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xiaoliang LIU ,  Anhe HE ,  Kang-wei PENG ,  Su-hui LIN ,  Ling-yuan HONG ,  Chia-hung CHANG

IPC: H01L33/40 ,  H01L33/46 ,  H01L33/38

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

公开(公告)号：US20210066549A1

公开(公告)日：2021-03-04

申请号：US17064250

申请日：2020-10-06

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Xiaoliang LIU ,  Anhe HE ,  Kang-wei PENG ,  Su-hui LIN ,  Ling-yuan HONG ,  Chia-hung CHANG

IPC: H01L33/40 ,  H01L33/46 ,  H01L33/38

Abstract: An LED device includes an epitaxial layered structure, a current spreading layer, a first insulating layer and a reflective structure. The current spreading layer is formed on a surface of the epitaxial layered structure. The first insulating layer is formed over the current spreading layer, and is formed with at least one first through hole to expose the current spreading layer. The reflective structure is formed on the first insulating layer, extends into the first through hole, and contacts with the current spreading layer. The current spreading layer is formed with at least one opening structure to expose the surface of the epitaxial layered structure.

公开(公告)号：US20180108810A1

公开(公告)日：2018-04-19

申请号：US15846146

申请日：2017-12-18

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Anhe HE ,  Su-hui LIN ,  Jiansen ZHENG ,  Kang-wei PENG ,  Xiaoxiong LIN ,  Chen-ke HSU

IPC: H01L33/38 ,  H01L33/60 ,  H01L33/00 ,  H01L33/12

CPC classification number: H01L33/38 ,  H01L33/005 ,  H01L33/12 ,  H01L33/46 ,  H01L33/60 ,  H01L2933/0016 ,  H01L2933/0058

Abstract: A flip-chip light-emitting diode structure includes a substrate; an epitaxial layer over the substrate, which includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer; a first electrode structure over the first semiconductor layer; a second electrode structure over the second semiconductor layer; wherein, the first electrode structure includes a first electrode body and a first electrode ring; the second electrode structure includes a second electrode body and a second electrode ring; the thickness of the first electrode ring is greater than or equal to that of the first electrode body and the thickness of the second electrode ring is greater than or equal to that of the second electrode body. As barrier structures, the first and the second electrode rings are used for avoiding short circuit during packaging and usage of the light-emitting diode due to overflow of solid crystal conductive materials, thus improving reliability.

公开(公告)号：US20170263812A1

公开(公告)日：2017-09-14

申请号：US15607461

申请日：2017-05-27

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Chia-hung CHANG ,  Gong CHEN ,  Su-hui LIN ,  Kang-wei PENG ,  Sheng-hsien HSU ,  Chuan-gui LIU ,  Xiao-xiong LIN ,  Yu ZHOU ,  Jing-jing WEI ,  Jing HUANG

IPC: H01L33/02 ,  H01L27/15 ,  H01L33/60 ,  H01L33/00 ,  H01L33/10

CPC classification number: H01L33/025 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0095 ,  H01L33/10 ,  H01L33/20 ,  H01L33/60

Abstract: An LED fabrication method includes forming impurity release holes by focusing a laser at the substrate back surface, and forming invisible explosion points by focusing a laser inside the substrate on positions corresponding to the impurity release holes; communicating the impurity release holes with the invisible explosion points to release impurities generated during forming of the invisible explosion points from the substrate through the impurity release holes, thereby avoiding low external quantum efficiency resulting from adherence of impurities to the side wall of the invisible explosion points. By focusing on a position with 10 μm˜40 ˜m inward from the substrate back side, adjusting laser energy and frequency to burn holes inside the substrate to penetrate and expose the substrate back surface, thereby effectively removing by-products, and reducing light absorption by such by-products, light extraction from a side wall of the LED can also be improved and light extraction efficiency is enhanced.