公开(公告)号：US11462517B2

公开(公告)日：2022-10-04

申请号：US16899413

申请日：2020-06-11

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Ping Zhang ,  Junpeng Shi ,  Senpeng Huang ,  Zhen-duan Lin ,  Shunyi Chen ,  Chen-ke Hsu

IPC: H01L33/48 ,  H01L25/075 ,  H01L33/50

Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.