公开(公告)号：US11538965B2

公开(公告)日：2022-12-27

申请号：US16948441

申请日：2020-09-18

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Junpeng Shi ,  Zhen-Duan Lin ,  Chen-Ke Hsu ,  Ping Zhang

IPC: H01L33/50 ,  H01L25/075

Abstract: A light-emitting diode (LED) filament structure includes a substrate, an LED chip unit, a first chromic layer, and a light conversion layer. The LED chip unit is disposed on the substrate, and includes first and second LED chips emitting different excitation lights. The first chromic layer covers the first and second LED chips. The light conversion layer covers the LED chip unit and the first chromic layer. The first chromic layer is configured to transition between an inactivated state and an activated state to prevent or allow the excitation light from the first or second LED chips to pass therethrough, so as to excite the light conversion layer to emit different excited lights having different color temperatures.

公开(公告)号：US11462517B2

公开(公告)日：2022-10-04

申请号：US16899413

申请日：2020-06-11

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Ping Zhang ,  Junpeng Shi ,  Senpeng Huang ,  Zhen-duan Lin ,  Shunyi Chen ,  Chen-ke Hsu

IPC: H01L33/48 ,  H01L25/075 ,  H01L33/50

Abstract: A light-emitting diode (LED) device includes a base plate, an LED chip unit disposed on the base plate, and a light conversion layer disposed on and covering the LED chip unit. The LED chip unit includes a first chip and a second chip. The first chip emits a first excitation light having an emission peak wavelength ranging from 385 nm to 425 nm. The second chip emits a second excitation light having an emission peak wavelength greater than that of the first excitation light. The light conversion layer is configured to convert the first and second excitation lights to excited lights having different emission peak wavelengths, each of which ranges from 440 nm to 700 nm. A mixture of the excited lights is white light.