Manufacturing method of chip package and chip package

    公开(公告)号:US11705368B2

    公开(公告)日:2023-07-18

    申请号:US17373773

    申请日:2021-07-13

    Applicant: XINTEC INC.

    CPC classification number: H01L21/76894 H01L21/02013 H01L24/94

    Abstract: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

    Manufacturing method of chip package and chip package

    公开(公告)号:US11942563B1

    公开(公告)日:2024-03-26

    申请号:US18327875

    申请日:2023-06-01

    Applicant: XINTEC INC.

    CPC classification number: H01L31/03529 H01L31/02005

    Abstract: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

    MANUFACTURING METHOD OF CHIP PACKAGE AND CHIP PACKAGE

    公开(公告)号:US20210343591A1

    公开(公告)日:2021-11-04

    申请号:US17373773

    申请日:2021-07-13

    Applicant: XINTEC INC.

    Abstract: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

    Manufacturing method of chip package and chip package

    公开(公告)号:US11121031B2

    公开(公告)日:2021-09-14

    申请号:US16668570

    申请日:2019-10-30

    Applicant: XINTEC INC.

    Abstract: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.

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