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公开(公告)号:US11056427B2
公开(公告)日:2021-07-06
申请号:US16576714
申请日:2019-09-19
申请人: XINTEC INC.
发明人: Kuei-Wei Chen , Chia-Ming Cheng
IPC分类号: H01L23/522 , H01L23/48
摘要: A chip package includes a substrate, first and second dielectric layers, first and second metal layers, and first conductive vias. The first dielectric layer is on a bottom surface of the substrate. The first metal layer is on a bottom surface of the first dielectric layer. The first metal layer has first sections, and every two adjacent first sections have a gap therebetween. The second dielectric layer is on a bottom surface of the first metal layer and the bottom surface of the first dielectric layer. The second metal layer is on a bottom surface of the second dielectric layer, and has second sections respectively aligned with the gaps. Two sides of the second section respectively overlap two adjacent first sections. The first conductive via is in the second dielectric layer and in electrical contact with the first and second sections.
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公开(公告)号:US11973095B2
公开(公告)日:2024-04-30
申请号:US17861011
申请日:2022-07-08
申请人: XINTEC INC.
发明人: Kuei-Wei Chen , Chia-Ming Cheng , Chia-Sheng Lin
IPC分类号: H01L27/146
CPC分类号: H01L27/14618 , H01L27/14632 , H01L27/14636 , H01L27/14687 , H01L27/14698 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要: A chip package including a substrate, a first conductive structure, and an electrical isolation structure is provided. The substrate has a first surface and a second surface opposite the first surface), and includes a first opening and a second opening surrounding the first opening. The substrate includes a sensor device adjacent to the first surface. A first conductive structure includes a first conductive portion in the first opening of the substrate, and a second conductive portion over the second surface of the substrate. An electrical isolation structure includes a first isolation portion in the second opening of the substrate, and a second isolation portion extending from the first isolation portion and between the second surface of the substrate and the second conductive portion. The first isolation portion surrounds the first conductive portion.
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公开(公告)号:US11705368B2
公开(公告)日:2023-07-18
申请号:US17373773
申请日:2021-07-13
申请人: XINTEC INC.
发明人: Chia-Sheng Lin , Hui-Hsien Wu , Jian-Hong Chen , Tsang-Yu Liu , Kuei-Wei Chen
IPC分类号: H01L21/768 , H01L23/00 , H01L21/02
CPC分类号: H01L21/76894 , H01L21/02013 , H01L24/94
摘要: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.
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公开(公告)号:US09318461B2
公开(公告)日:2016-04-19
申请号:US14255872
申请日:2014-04-17
申请人: XINTEC INC.
发明人: Chun-Wei Chang , Kuei-Wei Chen , Chia-Ming Cheng , Chia-Sheng Lin , Chien-Hui Chen , Tsang-Yu Liu
IPC分类号: H01L21/00 , H01L23/538 , H01L23/00 , H01L21/768 , H01L21/784 , H01L21/683
CPC分类号: H01L24/26 , H01L21/6835 , H01L21/76898 , H01L21/78 , H01L21/784 , H01L23/3192 , H01L24/05 , H01L24/11 , H01L24/13 , H01L24/27 , H01L24/94 , H01L2224/02371 , H01L2224/02372 , H01L2224/03002 , H01L2224/0401 , H01L2224/04042 , H01L2224/04105 , H01L2224/05009 , H01L2224/05548 , H01L2224/05562 , H01L2224/05566 , H01L2224/05567 , H01L2224/05624 , H01L2224/05647 , H01L2224/05655 , H01L2224/11002 , H01L2224/13022 , H01L2224/13024 , H01L2224/13025 , H01L2224/131 , H01L2224/13111 , H01L2224/94 , H01L2924/14 , H01L2924/15788 , H01L2924/00 , H01L2224/11 , H01L2924/014 , H01L2224/03
摘要: A wafer level array of chips is provided. The wafer level array of chips comprises a semiconductor wafer, and a least one extending-line protection. The semiconductor wafer has at least two chips, which are arranged adjacent to each other, and a carrier layer. Each chip has an upper surface and a lower surface, and comprises at least one device. The device is disposed upon the upper surface, covered by the carrier layer. The extending-line protection is disposed under the carrier layer and between those two chips. The thickness of the extending-line protection is less than that of the chip. Wherein the extending-line protection has at least one extending-line therein. In addition, a chip package fabricated by the wafer level array of chips, and a method thereof are also provided.
摘要翻译: 提供晶片级的芯片阵列。 晶片级的芯片阵列包括半导体晶片和至少一个延伸线保护。 半导体晶片具有彼此相邻布置的至少两个芯片和载体层。 每个芯片具有上表面和下表面,并且包括至少一个装置。 该装置设置在上表面上,被载体层覆盖。 延伸线保护设置在载体层之下和两个芯片之间。 延长线保护的厚度小于芯片的厚度。 其中延伸线保护件中至少有一条延伸线。 此外,还提供了由晶片级阵列芯片制造的芯片封装及其方法。
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公开(公告)号:US11942563B1
公开(公告)日:2024-03-26
申请号:US18327875
申请日:2023-06-01
申请人: XINTEC INC.
发明人: Chia-Sheng Lin , Hui-Hsien Wu , Jian-Hong Chen , Tsang-Yu Liu , Kuei-Wei Chen
IPC分类号: H01L31/0352 , H01L31/02
CPC分类号: H01L31/03529 , H01L31/02005
摘要: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.
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公开(公告)号:US11450697B2
公开(公告)日:2022-09-20
申请号:US16581594
申请日:2019-09-24
申请人: XINTEC INC.
发明人: Kuei-Wei Chen , Chia-Ming Cheng , Chia-Sheng Lin
IPC分类号: H01L27/146
摘要: A chip package including a substrate, a first conductive structure, and an electrical isolation structure is provided. The substrate has a first surface and a second surface opposite the first surface), and includes a first opening and a second opening surrounding the first opening. The substrate includes a sensor device adjacent to the first surface. A first conductive structure includes a first conductive portion in the first opening of the substrate, and a second conductive portion over the second surface of the substrate. An electrical isolation structure includes a first isolation portion in the second opening of the substrate, and a second isolation portion extending from the first isolation portion and between the second surface of the substrate and the second conductive portion. The first isolation portion surrounds the first conductive portion.
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公开(公告)号:US20210343591A1
公开(公告)日:2021-11-04
申请号:US17373773
申请日:2021-07-13
申请人: XINTEC INC.
发明人: Chia-Sheng Lin , Hui-Hsien Wu , Jian-Hong Chen , Tsang-Yu Liu , Kuei-Wei Chen
IPC分类号: H01L21/768 , H01L23/00 , H01L21/02
摘要: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.
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公开(公告)号:US11121031B2
公开(公告)日:2021-09-14
申请号:US16668570
申请日:2019-10-30
申请人: XINTEC INC.
发明人: Chia-Sheng Lin , Hui-Hsien Wu , Jian-Hong Chen , Tsang-Yu Liu , Kuei-Wei Chen
IPC分类号: H01L21/768 , H01L23/00 , H01L21/02
摘要: A manufacturing method of a chip package includes patterning a wafer to form a scribe trench, in which a light-transmissive function layer below the wafer is in the scribe trench, the light-transmissive function layer is between the wafer and a carrier, and a first included angle is formed between an outer wall surface and a surface of the wafer facing the light-transmissive function layer; cutting the light-transmissive function layer and the carrier along the scribe trench to form a chip package that includes a chip, the light-transmissive function layer, and the carrier; and patterning the chip to form an opening, in which the light-transmissive function layer is in the opening, a second included angle is formed between an inner wall surface of the chip and a surface of the chip facing the light-transmissive function layer, and is different from the first included angle.
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