公开(公告)号：US20190103506A1

公开(公告)日：2019-04-04

申请号：US16050899

申请日：2018-07-31

Applicant: Xiamen Changelight Co., Ltd.

Inventor： Kaixuan Chen ,  Zhiwei Lin ,  Xiangjing Zhuo ,  Gang Jing ,  Aimin Wang

IPC: H01L33/00 ,  H01L33/16 ,  H01L33/32

Abstract: According to at least some embodiments of the present disclosure, a method of manufacturing semiconductor wafers comprises: selectively growing a nitride buffer layer on a first surface of a patterned substrate, the patterned substrate including at least the first surface and a second surface; and growing an epitaxial layer on the nitride buffer layer, wherein a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate. The epitaxial layer does not include multiple crystal surfaces having different crystal growth directions that cause a stress at a junction interface where the crystal surfaces having the different crystal growth directions meet.

公开(公告)号：US11328924B2

公开(公告)日：2022-05-10

申请号：US16826160

申请日：2020-03-20

Applicant: Xiamen Changelight Co. Ltd.

Inventor： Kaixuan Chen ,  Zhiwei Lin ,  Liyan Huo ,  Xiangjing Zhuo ,  Gang Yao ,  Aimin Wang

IPC: H01L33/12 ,  H01L21/02 ,  H01L21/3213 ,  H01L21/28

Abstract: Provided is a method for manufacturing a semiconductor wafer and a semiconductor wafer. The method includes: disposing a sacrificial layer on a first surface and a second surface of a patterned substrate, the patterned substrate comprising the first surface and the second surface having different normal directions; exposing the first surface by removing the first portion of the sacrificial layer disposed on the first surface; growing an original nitride buffer layer on the first surface and the second portion of the sacrificial layer; partially lifting off the second portion of the sacrificial layer disposed on the second surface such that at least one sub-portion of the second portion of the sacrificial layer remains on the second surface of the patterned substrate; and growing an epitaxial layer on the original nitride buffer layer, where a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate.

公开(公告)号：US10658541B2

公开(公告)日：2020-05-19

申请号：US16050899

申请日：2018-07-31

Applicant: Xiamen Changelight Co., Ltd.

Inventor： Kaixuan Chen ,  Zhiwei Lin ,  Xiangjing Zhou ,  Gang Yao ,  Aimin Wang

IPC: H01L33/00 ,  H01L33/32 ,  H01L33/16 ,  H01L21/02 ,  H01L33/12

Abstract: According to at least some embodiments of the present disclosure, a method of manufacturing semiconductor wafers comprises: selectively growing a nitride buffer layer on a first surface of a patterned substrate, the patterned substrate including at least the first surface and a second surface; and growing an epitaxial layer on the nitride buffer layer, wherein a crystal surface of the epitaxial layer grows along a normal direction of the patterned substrate. The epitaxial layer does not include multiple crystal surfaces having different crystal growth directions that cause a stress at a junction interface where the crystal surfaces having the different crystal growth directions meet.