公开(公告)号：US20220278252A1

公开(公告)日：2022-09-01

申请号：US17677712

申请日：2022-02-22

Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

Inventor： Poyang CHANG ,  Linrong CAI ,  Shao-Hua HUANG ,  Liqin ZHU ,  Shuangliang LIU

IPC: H01L33/22 ,  H01L33/60 ,  H01L33/38 ,  H01L33/62

Abstract: A light-emitting diode (LED) chip includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The second semiconductor layer has a light-emitting surface that is opposite to the active layer and that is formed with a microstructure. The microstructure includes a plurality of first protrusions that are separately disposed on the light-emitting surface, and a plurality of second protrusions that are disposed on the first protrusions and on the light-emitting surface between any two adjacent ones of the first protrusions.

公开(公告)号：US20220392949A1

公开(公告)日：2022-12-08

申请号：US17819693

申请日：2022-08-15

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Linrong CAI ,  Lixun YANG ,  Hsin-Yi TSENG ,  Liqin ZHU

IPC: H01L27/15

Abstract: A light-emitting diode device includes a substrate and at least one mesa structure disposed on the substrate. The substrate includes at least one light-emitting region-forming area and at least one dicing region-forming area that are spaced apart from each other. The at least one dicing region-forming area surrounds the at least one light-emitting region-forming area. The at least one mesa structure includes a light-emitting mesa disposed on the at least one light-emitting region-forming area, and a dicing mesa disposed on the at least one dicing region-forming area and surrounding the light-emitting mesa. A method for making the light-emitting diode device is also provided herein.

公开(公告)号：US20210320233A1

公开(公告)日：2021-10-14

申请号：US17356755

申请日：2021-06-24

Applicant: Xiamen Sanan Optoelectronics Technology Co., LTD

Inventor： Hailin Rao ,  Shaohua Huang ,  Xiaoqiang Zeng ,  Lixun Yang ,  Shuiqing LI ,  Linrong CAI

IPC: H01L33/58 ,  H01L33/48 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting device includes an LED chip disposed on a supporting component. The LED chip includes a semiconductor stack formed on a substrate, a first electrode, and a second electrode. A light-blocking layer fills the supporting component to cover a lateral side of the LED chip and expose a top chip surface of the LED chip. The light-blocking layer has a top surface not lower than the top chip surface of the LED chip. A height difference among the top chip surface, the top surface of the light-blocking layer and a top end of the supporting component is less than 10 μm. A top light exit port defined by the light-blocking layer to expose the top chip surface has a cross sectional area not larger than that of the top chip surface.