摘要:
A suspension for a HGA comprises a flexure having a suspension tongue arranged for supporting a slider, which comprising a stainless steel layer and a dielectric layer formed thereon. The dielectric layer has a top surface and bottom surface, a plurality of bonding pads are formed on the top surface at a leading portion of the suspension tongue and arranged for connecting with the slider, and at least two separate supporting pieces are formed on the bottom surface and located at a corresponding position with the bonding pads, thereby releasing stress generated on the bonding pads. The invention also discloses a HGA and a disk drive unit with the same. The invention can release the stress generated on the bonding pads of the suspension, reduce the temperature impact to the suspension, and in turn, reduce thermal crown change of the slider, thereby improving the reading and writing performance.
摘要:
A suspension for a HGA comprises a flexure having a suspension tongue arranged for supporting a slider, which comprising a stainless steel layer and a dielectric layer formed thereon. The dielectric layer has a top surface and bottom surface, a plurality of bonding pads are formed on the top surface at a leading portion of the suspension tongue and arranged for connecting with the slider, and at least two separate supporting pieces are formed on the bottom surface and located at a corresponding position with the bonding pads, thereby releasing stress generated on the bonding pads. The invention also discloses a HGA and a disk drive unit with the same. The invention can release the stress generated on the bonding pads of the suspension, reduce the temperature impact to the suspension, and in turn, reduce thermal crown change of the slider, thereby improving the reading and writing performance.
摘要:
A high-voltage transistor device comprises a spiral resistive field plate over a first well region between a drain region and a source region of the high-voltage transistor device, wherein the spiral resistive field plate is separated from the first well region by a first isolation layer, and is coupled between the drain region and the source region. The high-voltage transistor device further comprises a plurality of first field plates over the spiral resistive field plate with each first field plate covering one or more segments of the spiral resistive field plate, wherein the plurality of first field plates are isolated from the spiral resistive field plate by a first dielectric layer, and wherein the plurality of first field plates are isolated from each other, and a starting first field plate is connected to the source region.
摘要:
A high-voltage transistor device comprises a spiral resistive field plate over a first well region between a drain region and a source region of the high-voltage transistor device, wherein the spiral resistive field plate is separated from the first well region by a first isolation layer, and is coupled between the drain region and the source region. The high-voltage transistor device further comprises a plurality of first field plates over the spiral resistive field plate with each first field plate covering one or more segments of the spiral resistive field plate, wherein the plurality of first field plates are isolated from the spiral resistive field plate by a first dielectric layer, and wherein the plurality of first field plates are isolated from each other, and a starting first field plate is connected to the source region.