公开(公告)号：US20130252410A1

公开(公告)日：2013-09-26

申请号：US13599980

申请日：2012-08-30

申请人： Xianyu WENXU ,  Jeong-Yub LEE ,  Chang -Youl MOON ,  Yong-Young PARK ,  Woo Young YANG ,  Jae-Joon OH ,  In-Jun HWANG

发明人： Xianyu WENXU ,  Jeong-Yub LEE ,  Chang -Youl MOON ,  Yong-Young PARK ,  Woo Young YANG ,  Jae-Joon OH ,  In-Jun HWANG

IPC分类号： H01L21/28 ,  H01L21/18 ,  H01L21/283

CPC分类号： H01L21/268 ,  H01L21/28575 ,  H01L21/3245 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/517 ,  H01L29/66462

摘要： A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.

摘要翻译： 用于形成用于III族氮化物异质结结构器件的选择性欧姆接触的方法可包括在包括至少一个III族氮化物异质结层并且具有限定的欧姆接触区域的外延衬底上形成导电层和覆盖层， 覆盖层形成在导电层之间或在欧姆接触区域和非欧姆接触区域之一的导电层和III族氮化物异质结层之间，并且施加激光退火工艺和感应退火工艺中的至少一个 在小于或等于约750℃的温度下在衬底上完成欧姆接触区域中的选择性欧姆接触。