公开(公告)号：US20060231756A1

公开(公告)日：2006-10-19

申请号：US11454171

申请日：2006-06-14

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Yang

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Yang

IPC分类号： G01N23/00

CPC分类号： G01Q60/22

摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

公开(公告)号：US06532806B1

公开(公告)日：2003-03-18

申请号：US09695508

申请日：2000-10-23

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Peter G. Schultz ,  Tao Wei

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Peter G. Schultz ,  Tao Wei

IPC分类号： G01B734

CPC分类号： G01Q60/22 ,  Y10S977/86 ,  Y10S977/864 ,  Y10S977/865 ,  Y10S977/869

摘要： A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.

摘要翻译： 描述了一种新颖的扫描显微镜，其使用近场渐逝电磁波来探测样品特性。 该新型显微镜能够对样品的电性能进行高分辨率成像和定量测量。 本发明的扫描瞬逝波电磁显微镜（SEMM）可以绘制材料的介电常数，切线损耗，电导率，复电阻抗等电参数。 定量图对应于成像细节。 新型显微镜可用于测量电介质和导电材料的电学性能。

公开(公告)号：US08358141B2

公开(公告)日：2013-01-22

申请号：US12465022

申请日：2009-05-13

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

IPC分类号： G01R27/04 ,  G01R31/308

CPC分类号： G01Q60/22

摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

公开(公告)号：US20090302866A1

公开(公告)日：2009-12-10

申请号：US12465022

申请日：2009-05-13

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

IPC分类号： G01R27/04 ,  G01R1/06

CPC分类号： G01Q60/22

摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

摘要翻译： 公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜（SEMM）。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数，损耗角正切，电导率，电阻抗等电参数的能力。 然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围（从微米到纳米）之间提供距离控制，其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布， 非线性介质和导电材料。 本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。

公开(公告)号：US07550963B1

公开(公告)日：2009-06-23

申请号：US09608311

申请日：2000-06-30

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

IPC分类号： G01R27/00

CPC分类号： G01Q60/22

摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

摘要翻译： 公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜（SEMM）。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数，损耗角正切，电导率，电阻抗等电参数的能力。 然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围（从微米到纳米）之间提供距离控制，其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布， 非线性介质和导电材料。 本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。

公开(公告)号：US06660414B1

公开(公告)日：2003-12-09

申请号：US09299805

申请日：1999-04-26

申请人： Xiao-Dong Xiang ,  Hauyee Chang ,  Chen Gao ,  Ichiro Takeuchi ,  Peter G. Schultz

发明人： Xiao-Dong Xiang ,  Hauyee Chang ,  Chen Gao ,  Ichiro Takeuchi ,  Peter G. Schultz

IPC分类号： B32B900

CPC分类号： C23C14/5806 ,  B01J2219/0043 ,  B01J2219/00745 ,  B01J2219/00754 ,  C01G23/006 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/4682 ,  C04B35/47 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3241 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C23C14/088 ,  C40B60/14 ,  H01L21/31691

摘要： A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (BaxSr1−x)TiO3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (BaxSr1−x)TiO3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

摘要翻译： 提供了一种用于高频用途的电介质薄膜材料，包括用作电容器并且具有低介电损耗因子，该薄膜包括通式（BaxSr1-x）TiO3的掺杂钨的钛酸钡锶组合物，其中 X在约0.5至约1.0之间。 还提供了制备通式（BaxSr1-x）TiO3的电介质薄膜并掺杂W的方法，其中X为约0.5至约1.0，提供基底，TiO 2，W掺杂剂，Ba和 任选的Sr沉积在衬底上，并且将含有TiO 2，W掺杂剂，Ba和任选的Sr的衬底加热以形成低损耗介电薄膜。

公开(公告)号：US06173604B1

公开(公告)日：2001-01-16

申请号：US09158037

申请日：1998-09-22

申请人： Xiao-Dong Xiang ,  Chen Gao

发明人： Xiao-Dong Xiang ,  Chen Gao

IPC分类号： G01B734

CPC分类号： G01Q60/22 ,  Y10S977/86 ,  Y10S977/864 ,  Y10S977/865 ,  Y10S977/869

摘要： A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.

摘要翻译： 描述了一种新颖的扫描显微镜，其使用近场渐逝电磁波来探测样品特性。 该新型显微镜能够对样品的电性能进行高分辨率成像和定量测量。 本发明的扫描瞬逝波电磁显微镜（SEMM）可以绘制材料的介电常数，切线损耗，电导率，复电阻抗等电参数。 定量图对应于成像细节。 新型显微镜可用于测量电介质和导电材料的电学性能。