公开(公告)号：US20060231756A1

公开(公告)日：2006-10-19

申请号：US11454171

申请日：2006-06-14

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Yang

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Yang

IPC分类号： G01N23/00

CPC分类号： G01Q60/22

摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

公开(公告)号：US08358141B2

公开(公告)日：2013-01-22

申请号：US12465022

申请日：2009-05-13

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

IPC分类号： G01R27/04 ,  G01R31/308

CPC分类号： G01Q60/22

摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

公开(公告)号：US20090302866A1

公开(公告)日：2009-12-10

申请号：US12465022

申请日：2009-05-13

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

IPC分类号： G01R27/04 ,  G01R1/06

CPC分类号： G01Q60/22

摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

摘要翻译： 公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜（SEMM）。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数，损耗角正切，电导率，电阻抗等电参数的能力。 然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围（从微米到纳米）之间提供距离控制，其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布， 非线性介质和导电材料。 本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。

公开(公告)号：US07550963B1

公开(公告)日：2009-06-23

申请号：US09608311

申请日：2000-06-30

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Fred Duewer ,  Hai Tao Yang ,  Yalin Lu

IPC分类号： G01R27/00

CPC分类号： G01Q60/22

摘要： A scanning evanescent microwave microscope (SEMM) that uses near-field evanescent electromagnetic waves to probe sample properties is disclosed. The SEMM is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The SEMM has the ability to map dielectric constant, loss tangent, conductivity, electrical impedance, and other electrical parameters of materials. Such properties are then used to provide distance control over a wide range, from to microns to nanometers, over dielectric and conductive samples for a scanned evanescent microwave probe, which enable quantitative non-contact and submicron spatial resolution topographic and electrical impedance profiling of dielectric, nonlinear dielectric and conductive materials. The invention also allows quantitative estimation of microwave impedance using signals obtained by the scanned evanescent microwave probe and quasistatic approximation modeling. The SEMM can be used to measure electrical properties of both dielectric and electrically conducting materials.

摘要翻译： 公开了一种使用近场瞬逝电磁波探测样品特性的扫描瞬逝微波显微镜（SEMM）。 SEMM能够对样品的电性能进行高分辨率成像和定量测量。 SEMM具有映射材料的介电常数，损耗角正切，电导率，电阻抗等电参数的能力。 然后使用这种性质在扫描的ev逝微波探针的电介质和导电样品上在宽范围（从微米到纳米）之间提供距离控制，其能够实现电介质的定量非接触和亚微米空间分辨率地形和电阻抗分布， 非线性介质和导电材料。 本发明还允许使用由扫描的ev逝微波探测器获得的信号和准静态近似建模来定量估计微波阻抗。 SEMM可用于测量电介质和导电材料的电学性能。

公开(公告)号：US06660414B1

公开(公告)日：2003-12-09

申请号：US09299805

申请日：1999-04-26

申请人： Xiao-Dong Xiang ,  Hauyee Chang ,  Chen Gao ,  Ichiro Takeuchi ,  Peter G. Schultz

发明人： Xiao-Dong Xiang ,  Hauyee Chang ,  Chen Gao ,  Ichiro Takeuchi ,  Peter G. Schultz

IPC分类号： B32B900

CPC分类号： C23C14/5806 ,  B01J2219/0043 ,  B01J2219/00745 ,  B01J2219/00754 ,  C01G23/006 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/4682 ,  C04B35/47 ,  C04B2235/3206 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3241 ,  C04B2235/3258 ,  C04B2235/3262 ,  C04B2235/3272 ,  C23C14/088 ,  C40B60/14 ,  H01L21/31691

摘要： A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (BaxSr1−x)TiO3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (BaxSr1−x)TiO3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

摘要翻译： 提供了一种用于高频用途的电介质薄膜材料，包括用作电容器并且具有低介电损耗因子，该薄膜包括通式（BaxSr1-x）TiO3的掺杂钨的钛酸钡锶组合物，其中 X在约0.5至约1.0之间。 还提供了制备通式（BaxSr1-x）TiO3的电介质薄膜并掺杂W的方法，其中X为约0.5至约1.0，提供基底，TiO 2，W掺杂剂，Ba和 任选的Sr沉积在衬底上，并且将含有TiO 2，W掺杂剂，Ba和任选的Sr的衬底加热以形成低损耗介电薄膜。

公开(公告)号：US06173604B1

公开(公告)日：2001-01-16

申请号：US09158037

申请日：1998-09-22

申请人： Xiao-Dong Xiang ,  Chen Gao

发明人： Xiao-Dong Xiang ,  Chen Gao

IPC分类号： G01B734

CPC分类号： G01Q60/22 ,  Y10S977/86 ,  Y10S977/864 ,  Y10S977/865 ,  Y10S977/869

摘要： A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.

摘要翻译： 描述了一种新颖的扫描显微镜，其使用近场渐逝电磁波来探测样品特性。 该新型显微镜能够对样品的电性能进行高分辨率成像和定量测量。 本发明的扫描瞬逝波电磁显微镜（SEMM）可以绘制材料的介电常数，切线损耗，电导率，复电阻抗等电参数。 定量图对应于成像细节。 新型显微镜可用于测量电介质和导电材料的电学性能。

公开(公告)号：US06532806B1

公开(公告)日：2003-03-18

申请号：US09695508

申请日：2000-10-23

申请人： Xiao-Dong Xiang ,  Chen Gao ,  Peter G. Schultz ,  Tao Wei

发明人： Xiao-Dong Xiang ,  Chen Gao ,  Peter G. Schultz ,  Tao Wei

IPC分类号： G01B734

CPC分类号： G01Q60/22 ,  Y10S977/86 ,  Y10S977/864 ,  Y10S977/865 ,  Y10S977/869

摘要： A novel scanning microscope is described that uses near-field evanescent electromagnetic waves to probe sample properties. The novel microscope is capable of high resolution imaging and quantitative measurements of the electrical properties of the sample. The inventive scanning evanescent wave electromagnetic microscope (SEMM) can map dielectric constant, tangent loss, conductivity, complex electrical impedance, and other electrical parameters of materials. The quantitative map corresponds to the imaged detail. The novel microscope can be used to measure electrical properties of both dielectric and electrically conducting materials.

摘要翻译： 描述了一种新颖的扫描显微镜，其使用近场渐逝电磁波来探测样品特性。 该新型显微镜能够对样品的电性能进行高分辨率成像和定量测量。 本发明的扫描瞬逝波电磁显微镜（SEMM）可以绘制材料的介电常数，切线损耗，电导率，复电阻抗等电参数。 定量图对应于成像细节。 新型显微镜可用于测量电介质和导电材料的电学性能。

公开(公告)号：US08049996B2

公开(公告)日：2011-11-01

申请号：US12236327

申请日：2008-09-23

申请人： Haitao Yang ,  Xiao-Dong Xiang

发明人： Haitao Yang ,  Xiao-Dong Xiang

IPC分类号： G11B5/39 ,  H01L29/82

CPC分类号： G06N99/002 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3268 ,  H01F10/329 ,  Y10S977/933 ,  Y10T428/1107

摘要： Embodiments of the present invention are directed toward the field of spintronics, and in particular, systems and devices capable of performing spin coherent quantum logic operations. The inventive spin valve comprises two ferromagnetic electrode layers, and a non-magnetic conducting layer positioned therebetween. An external magnetic field B0 is applied in the Z direction, such that the two electrode layers are each magnetized in a direction substantially parallel to the external magnetic field. Rather than attempting to change the magnetization of one of the ferromagnetic layers, as is the case in prior art technologies, it is the direction of the electron spin that is manipulated in the present embodiments while the electron is traveling through the middle, nonmagnetic layer. One of the ferromagnetic electrodes may be the tip of a scanning tunneling microscope (STM). This configuration may further comprise a bias voltage source connected between the STM tip and the other ferromagnetic electrode, such that a spin polarized tunneling current is conducted between the two.

摘要翻译： 本发明的实施例涉及自旋电子学领域，特别是能够执行自相关量子逻辑运算的系统和装置。 本发明的自旋阀包括两个铁磁电极层和位于它们之间的非磁性导电层。 在Z方向上施加外部磁场B0，使得两个电极层在大致平行于外部磁场的方向上各自被磁化。 与现有技术中的情况一样，不是试图改变铁磁层之一的磁化，而是在电子行进通过中间非磁性层时在本实施例中操纵的电子自旋的方向。 铁磁电极之一可以是扫描隧道显微镜（STM）的尖端。 该配置还可以包括连接在STM尖端和另一个铁磁电极之间的偏置电压源，使得在两者之间进行自旋极化隧穿电流。

公开(公告)号：US08018345B2

公开(公告)日：2011-09-13

申请号：US12066070

申请日：2006-09-07

申请人： Xiao-Dong Xiang ,  Zhi-Gang Yu ,  Huan-Hua Wang

发明人： Xiao-Dong Xiang ,  Zhi-Gang Yu ,  Huan-Hua Wang

IPC分类号： G08B13/14

CPC分类号： G06K19/0672

摘要： RFID tags and devices disclosed herein use ferromagnetic films to store information. The tags include patches of ferromagnetic materials, each patch having a particular ferromagnetic resonance frequency determined by the composition of the ferromagnetic film. When stimulated, the patches emit microwave or RF signals at their resonance frequencies and at intensities proportional to the patch sizes. The signals are read and the frequency spectrum of the tag may be determined by using a FFT. Identity and other information may be provided by the spectrum.

摘要翻译： 本文公开的RFID标签和设备使用铁磁膜来存储信息。 标签包括铁磁材料的贴片，每个贴片具有由铁磁膜的组成确定的特定的铁磁共振频率。 当被刺激时，贴片以它们的共振频率和与贴片尺寸成比例的强度发射微波或RF信号。 读取信号，并且可以通过使用FFT来确定标签的频谱。 身份和其他信息可能由频谱提供。

公开(公告)号：US07945335B2

公开(公告)日：2011-05-17

申请号：US11601083

申请日：2006-11-16

申请人： Xiao-Dong Xiang ,  Gang Wang ,  Haitao Yang ,  Jonathan Melman ,  Gerald Francis Dionne

发明人： Xiao-Dong Xiang ,  Gang Wang ,  Haitao Yang ,  Jonathan Melman ,  Gerald Francis Dionne

IPC分类号： A61F2/00

CPC分类号： A61N1/406 ,  A61K41/0052 ,  A61K49/1818

摘要： Embodiments of the present invention are generally related to apparatus and methodology of thermal applicators in cancer therapy. In particular, the present embodiments are directed to a technique called “nanoparticle ferromagnetic resonance heating,” where ferromagnetic resonance heating in addition to an RF hyperthermia treatment is used to cause cell apoptosis and necrosis. An apparatus for carrying out a ferromagnetic resonance heating treatment of a tumor, comprises a volume concentration of super paramagnetic particles contained within the interior of the tumor, the concentration ranging from about 0.1 to about 1 percent; a magnetic field source configured to deliver a gradient DC magnetic field to the region of the tumor; and an energy source configured to deliver to the tumor an RF field at a frequency ranging from about 100 to 200 MHz. The apparatus of claim 1, wherein the super paramagnetic particles are selected from the group consisting of maghemite (γ-Fe2O3) based compounds, and yttrium iron garnet (Y3Fe5O12) based compounds.

摘要翻译： 本发明的实施例通常涉及癌症治疗中的热敷装置的装置和方法。 特别地，本实施例涉及一种称为“纳米颗粒铁磁共振加热”的技术，其中使用除RF热疗处理之外的铁磁共振加热以引起细胞凋亡和坏死。 用于进行肿瘤的铁磁共振加热处理的装置包括包含在肿瘤内部的超顺磁性颗粒的体积浓度，其浓度范围为约0.1％至约1％; 磁场源，被配置为向所述肿瘤的区域递送梯度DC磁场; 以及能量源，其被配置为以大约100至200MHz的频率向所述肿瘤递送RF场。 2.根据权利要求1所述的装置，其中所述超顺磁性粒子选自由以磁赤铁矿（γ-Fe2O3）为基础的化合物和基于钇铁石榴石（Y 3 Fe 5 O 12）的化合物组成的组。