公开(公告)号：US20090273972A1

公开(公告)日：2009-11-05

申请号：US12296812

申请日：2007-04-11

申请人： Xiufeng Han ,  Zhongming Zeng ,  Yunan Han ,  Lixian Jiang ,  Zilong Peng ,  Wenshan Zhan

发明人： Xiufeng Han ,  Zhongming Zeng ,  Yunan Han ,  Lixian Jiang ,  Zilong Peng ,  Wenshan Zhan

IPC分类号： G11C11/15 ,  H01L21/00

CPC分类号： G11C11/155 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/329 ,  H01L43/08 ,  H03K19/16 ,  Y10T29/53165

摘要： A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A′, B′, C′ and an output signal line O′ are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.

摘要翻译： 具有环形磁性多层（5,6,8,9）的磁性逻辑元件。 磁逻辑元件包括通过蚀刻沉积在衬底上的磁性多层（5,6,8,9）单元制造的环形闭合部分。 可选地，磁逻辑元件还可以包括在闭合环形部分中的金属芯（10）。 所述磁性多层（5,6,8,9）单元布置在输入信号线A，B，C和输出信号线O上，然后制成闭合环形。 随后，在环形磁性多层单元（5,6,8,9）上，通过蚀刻制造输入信号线A'，B'，C'和输出信号线O'。 该磁逻辑元件可有效地减少退磁场和形状各向异性，导致无磁层反转场的减小。 此外，该磁逻辑元件具有稳定的工作性能和较长的使用寿命。

公开(公告)号：US08236576B2

公开(公告)日：2012-08-07

申请号：US12296812

申请日：2007-04-11

申请人： Xiufeng Han ,  Zhongming Zeng ,  Yunan Han ,  Lixian Jiang ,  Zilong Peng ,  Wenshan Zhan

发明人： Xiufeng Han ,  Zhongming Zeng ,  Yunan Han ,  Lixian Jiang ,  Zilong Peng ,  Wenshan Zhan

IPC分类号： G11C11/02 ,  H01L29/82

CPC分类号： G11C11/155 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/329 ,  H01L43/08 ,  H03K19/16 ,  Y10T29/53165

摘要： A magnetic logic element with toroidal magnetic multilayers (5,6,8,9). The magnetic logic element comprises a toroidal closed section which is fabricated by etching a unit of magnetic multilayers (5,6,8,9) deposited on a substrate. Optionally, the magnetic logic element may also comprise a metal core (10) in the closed toroidal section. Said magnetic multilayers (5,6,8,9) unit is arranged on the input signal lines A, B, C and an output signal line O, and then is made into a closed toroidal. Subsequently, on the toroidal magnetic multilayered unit (5,6,8,9), the input signal lines A′, B′, C′ and an output signal line O′ are fabricated by etching. This magnetic logic element can reduce the demagnetization field and the shape anisotropy effectively, leading to the decrease of the reversal field of magnetic free layer. Furthermore, this magnetic logic element has stable working performance and long operation life of the device.

摘要翻译： 具有环形磁性多层（5,6,8,9）的磁性逻辑元件。 磁逻辑元件包括通过蚀刻沉积在衬底上的磁性多层（5,6,8,9）单元制造的环形闭合部分。 可选地，磁逻辑元件还可以包括在闭合环形部分中的金属芯（10）。 所述磁性多层（5,6,8,9）单元布置在输入信号线A，B，C和输出信号线O上，然后制成闭合环形。 随后，在环形磁性多层单元（5,6,8,9）上，通过蚀刻制造输入信号线A'，B'，C'和输出信号线O'。 该磁逻辑元件可有效地减少退磁场和形状各向异性，导致无磁层反转场的减小。 此外，该磁逻辑元件具有稳定的工作性能和较长的使用寿命。

公开(公告)号：US20070183186A1

公开(公告)日：2007-08-09

申请号：US10599514

申请日：2004-12-01

申请人： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

发明人： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

摘要翻译： 本发明公开了一种基于垂直电流写入的MRAM（Magnetoresistive RAM）及其控制方法，MRAM单元中的信息写入操作通过与MFC单元并联的电流产生的磁场的公司效应完成， 电流垂直于MFC单元并通过本机。 这种结构的优点是：消除现有技术中的字线（WL），特别是用于信息写入，减少金属布线层和接触孔的数量，并降低MRAM的结构的复杂性，以及制造的难度和成本 处理。

公开(公告)号：US20080246023A1

公开(公告)日：2008-10-09

申请号：US11663684

申请日：2005-04-08

申请人： Zhongming Zeng ,  Xiufeng Han ,  Jiafeng Feng ,  Tianxing Wang ,  Guanxiang Du ,  Feifei Li ,  Wenshan Zhan

发明人： Zhongming Zeng ,  Xiufeng Han ,  Jiafeng Feng ,  Tianxing Wang ,  Guanxiang Du ,  Feifei Li ,  Wenshan Zhan

IPC分类号： H01L29/06 ,  H01L27/082

CPC分类号： H01L29/66984 ,  B82Y10/00 ,  H01L29/7376

摘要： The present invention relates to a transistor based on resonant tunneling effect of double barrier tunneling junctions comprising: a substrate, an emitter, a base, a collector and a first and a second tunneling barrier layers; wherein the first tunneling barrier layer is located between the emitter and the base, and the second tunneling barrier layer is located between the base and the collector; furthermore, the junction areas of the tunneling junctions which are formed between the emitter and the base and between the base and collector respectively are 1 μm2˜10000 μm2; the thickness of the base is comparable to the electron mean free path of material in the layer; the magnetization orientation is unbounded in one and only one pole of said emitter, base and collector. Because the double-barrier structure is used, it overcomes the Schottky potential between the base and the collector. Wherein the base current is a modulating signal, the collector signal is modulated to be similar to the base current's modulating mode by changing the magnetization orientation of the base or the collector, i.e., the resonant tunneling effect occurs. An amplified signal can be obtained under the suitable conditions.

摘要翻译： 本发明涉及一种基于双阻挡隧道结的谐振隧道效应的晶体管，包括：衬底，发射极，基极，集电极和第一和第二隧道势垒层; 其中所述第一隧道势垒层位于所述发射极和所述基极之间，并且所述第二隧穿势垒层位于所述基极和所述集电极之间; 此外，形成在发射极和基极之间以及基极和集电极之间的隧道结的接合面分别为1μm2〜10000μm2。 基底的厚度与层中材料的电子平均自由程相当; 磁化方向在所述发射极，基极和集电极的一个且仅一个极中是无界的。 因为使用双重阻挡结构，它克服了基极和集电极之间的肖特基电位。 其中基极电流是调制信号，通过改变基极或集电极的磁化取向，即发生谐振隧穿效应，将集电极信号调制成与基极电流的调制模式相似。 在合适的条件下可以获得放大的信号。

公开(公告)号：US07480171B2

公开(公告)日：2009-01-20

申请号：US10599514

申请日：2004-12-01

申请人： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

发明人： Zilong Peng ,  Xiufeng Han ,  Sufen Zhao ,  Weining Wang ,  Wenshan Zhan

IPC分类号： G11C7/00

CPC分类号： G11C11/16 ,  B82Y10/00 ,  H01L27/228

摘要： The invention discloses a MRAM (Magnetoresistive RAM) based on vertical current writing and its control method, the operation of information writing in the MRAM unit is completed by the corporate effect of the magnetic field generated by the current parallel to the MFC unit and the other current vertical to the MFC unit and passing through this unit. The advantage of such structure is: eliminating a word line (WL) of the prior art especially for information writing, reducing the number of the metal wiring layers and the contact holes, and reducing the complexity of MRAM's structure, and difficulty and cost of manufacturing process.

摘要翻译： 本发明公开了一种基于垂直电流写入的MRAM（Magnetoresistive RAM）及其控制方法，MRAM单元中的信息写入操作通过与MFC单元并联的电流产生的磁场的公司效应完成， 电流垂直于MFC单元并通过本机。 这种结构的优点是：消除现有技术中的字线（WL），特别是用于信息写入，减少金属布线层和接触孔的数量，并降低MRAM的结构的复杂性，以及制造的难度和成本 处理。