RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER
    1.
    发明申请
    RESONANT TRANSDUCER, MANUFACTURING METHOD THEREFOR, AND MULTI-LAYER STRUCTURE FOR RESONANT TRANSDUCER 有权
    共振传感器及其制造方法,以及谐振传感器的多层结构

    公开(公告)号:US20150028434A1

    公开(公告)日:2015-01-29

    申请号:US14336613

    申请日:2014-07-21

    Abstract: A resonant transducer includes a silicon single crystal substrate, a silicon single crystal resonator disposed over the silicon single crystal substrate, a shell made of silicon, surrounding the resonator with a gap, and forming a chamber together with the silicon single crystal substrate, an exciting module configured to excite the resonator, a vibration detecting module configured to detect vibration of the resonator, a first layer disposed over the chamber, the first layer having a through-hole, a second layer disposed over the first layer, a third layer covering the first layer and the second layer, and a projection extending from the second layer toward the resonator, the projection being spatially separated from the resonator, the projection being separated from the first layer by a first gap, the second layer being separated from the first layer by a second gap, the first gap is communicated with the second gap.

    Abstract translation: 谐振换能器包括硅单晶衬底,设置在硅单晶衬底上的硅单晶谐振器,由硅构成的外壳,围绕谐振器间隙,并与硅单晶衬底一起形成腔室,令人兴奋的 模块,其被配置为激励所述谐振器;振动检测模块,被配置为检测所述谐振器的振动,设置在所述腔室上的第一层,所述第一层具有通孔,设置在所述第一层上的第二层, 第一层和第二层,以及从第二层朝向谐振器延伸的突起,突起与谐振器在空间上分离,突起与第一层隔开第一间隙,第二层与第一层分离 通过第二间隙,第一间隙与第二间隙连通。

Patent Agency Ranking