公开(公告)号：US12071342B2

公开(公告)日：2024-08-27

申请号：US17971781

申请日：2022-10-24

Applicant: Stathera IP Holdings Inc.

Inventor： Vamsy Chodavarapu ,  George Xereas

IPC: B81C1/00 ,  B81B7/00 ,  G01L9/00 ,  G01L9/12 ,  H03H3/007 ,  H03H9/05 ,  H03H9/10 ,  H03H9/24

CPC classification number: B81C1/00182 ,  B81B7/007 ,  B81C1/00269 ,  B81C1/00301 ,  G01L9/0042 ,  G01L9/0073 ,  G01L9/12 ,  H03H3/0072 ,  H03H3/0073 ,  H03H9/0561 ,  H03H9/1057 ,  H03H9/2405 ,  H03H9/2426 ,  H03H9/2431 ,  H03H9/2436 ,  B81B2203/0307 ,  H03H2009/2442 ,  H03H9/2452 ,  H03H9/2463 ,  H03H9/2473 ,  H03H9/2478

Abstract: MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.

公开(公告)号：US11664781B2

公开(公告)日：2023-05-30

申请号：US16948328

申请日：2020-09-14

Applicant: Stathera IP Holdings Inc.

Inventor： Vamsy Chodavarapu ,  George Xereas

IPC: H03H9/10 ,  H03H9/24 ,  H03H9/05 ,  B81C1/00 ,  H03H3/007 ,  B81B7/00 ,  G01L9/12 ,  G01L9/00

CPC classification number: H03H9/1057 ,  B81B7/007 ,  B81C1/00182 ,  B81C1/00269 ,  B81C1/00301 ,  G01L9/0042 ,  G01L9/0073 ,  G01L9/12 ,  H03H3/0072 ,  H03H3/0073 ,  H03H9/0561 ,  H03H9/2405 ,  H03H9/2426 ,  H03H9/2431 ,  H03H9/2436 ,  B81B2203/0307 ,  H03H9/2452 ,  H03H9/2463 ,  H03H9/2473 ,  H03H9/2478 ,  H03H2009/2442

Abstract: MEMS based sensors, particularly capacitive sensors, potentially can address critical considerations for users including accuracy, repeatability, long-term stability, ease of calibration, resistance to chemical and physical contaminants, size, packaging, and cost effectiveness. Accordingly, it would be beneficial to exploit MEMS processes that allow for manufacturability and integration of resonator elements into cavities within the MEMS sensor that are at low pressure allowing high quality factor resonators and absolute pressure sensors to be implemented. Embodiments of the invention provide capacitive sensors and MEMS elements that can be implemented directly above silicon CMOS electronics.

公开(公告)号：US20180097499A1

公开(公告)日：2018-04-05

申请号：US15652954

申请日：2017-07-18

Applicant: Northeastern University

Inventor： Matteo RINALDI ,  Cristian CASSELLA ,  Zhenyun QIAN ,  Yu HUI

IPC: H03H9/02 ,  H03H9/15 ,  G01J5/44 ,  H01L41/18 ,  H03H9/17 ,  G01J5/04 ,  H03H9/13 ,  H03H3/02 ,  H03H9/24

CPC classification number: H03H9/02244 ,  G01J3/42 ,  G01J5/046 ,  G01J5/20 ,  G01J5/44 ,  G01J5/58 ,  H01L41/18 ,  H03H3/02 ,  H03H9/13 ,  H03H9/15 ,  H03H9/17 ,  H03H9/2463 ,  H03H2003/027 ,  H03H2009/02503 ,  H03H2009/155 ,  H03H2009/241

Abstract: A resonator includes a piezoelectric plate and interdigitated electrode(s). The interdigitated electrode includes a plurality of conductive strips disposed over a top surface of the piezoelectric plate. A two-dimensional mode of mechanical vibration is excited in a cross sectional plane of the piezoelectric plate in response to an alternating voltage applied through the interdigitated electrode. The two-dimensional mode of mechanical vibration is a cross-sectional Lamé mode resonance (CLMR) or a degenerate cross-sectional Lamé mode resonance (dCLMR).

公开(公告)号：US20170288635A1

公开(公告)日：2017-10-05

申请号：US15088814

申请日：2016-04-01

Applicant: Intel Corporation

Inventor： Adel A. ELSHERBINI ,  Feras EID ,  Baris BICEN ,  Telesphor KAMGAING ,  Vijay K. NAIR ,  Johanna M. SWAN ,  Georgios C. DOGIAMIS ,  Valluri R. RAO

IPC: H03H9/02 ,  H03H9/17

CPC classification number: H03H9/02259 ,  H03H9/17 ,  H03H9/2463 ,  H03H2009/02291 ,  H03H2009/155

Abstract: Embodiments of the invention include a piezoelectric resonator which includes an input transducer having a first piezoelectric material, a vibrating structure coupled to the input transducer, and an output transducer coupled to the vibrating structure. In one example, the vibrating structure is positioned above a cavity of an organic substrate. The output transducer includes a second piezoelectric material. In operation the input transducer causes an input electrical signal to be converted into mechanical vibrations which propagate across the vibrating structure to the output transducer.

公开(公告)号：US09712136B2

公开(公告)日：2017-07-18

申请号：US15238221

申请日：2016-08-16

Applicant: Northeastern University

Inventor： Matteo Rinaldi ,  Cristian Cassella ,  Zhenyun Qian ,  Yu Hui

IPC: H03H3/02 ,  H03H9/17 ,  H03H9/205 ,  G01J5/44 ,  H03H9/02 ,  G01J5/04 ,  H01L41/18 ,  H03H9/13 ,  H03H9/24 ,  H03H9/15

CPC classification number: H03H9/02244 ,  G01J3/42 ,  G01J5/046 ,  G01J5/20 ,  G01J5/44 ,  G01J5/58 ,  H01L41/18 ,  H03H3/02 ,  H03H9/13 ,  H03H9/15 ,  H03H9/17 ,  H03H9/2463 ,  H03H2003/027 ,  H03H2009/02503 ,  H03H2009/155 ,  H03H2009/241

Abstract: A resonator includes a piezoelectric plate and interdigitated electrode(s). The interdigitated electrode includes a plurality of conductive strips disposed over a top surface of the piezoelectric plate. A two-dimensional mode of mechanical vibration is excited in a cross sectional plane of the piezoelectric plate in response to an alternating voltage applied through the interdigitated electrode. The two-dimensional mode of mechanical vibration is a cross-sectional Lamé mode resonance (CLMR) or a degenerate cross-sectional Lamé mode resonance (dCLMR).

公开(公告)号：US09650238B2

公开(公告)日：2017-05-16

申请号：US14475487

申请日：2014-09-02

Applicant: Electronics and Telecommunications Research Institute

Inventor： In Bok Baek ,  Han Young Yu ,  Yark Yeon Kim ,  Young Jun Kim ,  Chang Geun Ahn ,  Yong Sun Yoon ,  Bong Kuk Lee ,  Ji Eun Lim ,  Won Ick Jang

IPC: B81B7/02 ,  B81C1/00 ,  B81B7/00 ,  H03H3/007 ,  H03H9/08 ,  H03H9/24 ,  H02N11/00

CPC classification number: B81B7/02 ,  B81B7/0006 ,  B81B7/0093 ,  B81B2201/0271 ,  B81B2203/0109 ,  B81B2203/0307 ,  B81C1/00142 ,  B81C1/0019 ,  B81C1/0038 ,  B81C1/00539 ,  H02N11/002 ,  H03H3/0072 ,  H03H9/08 ,  H03H9/2463

Abstract: A vibration device including a supporting portion formed to cover both ends of a vibration region, and a method of manufacturing the vibration device are provided. The vibration device may include a lower substrate on which an insulating layer is formed, an upper substrate connected onto the insulating layer, and including a vibration region that vibrates and that is separated from the lower substrate by at least a predetermined distance, and a supporting portion formed to cover both ends of the vibration region, to support the vibration region.

公开(公告)号：US09621105B2

公开(公告)日：2017-04-11

申请号：US14961252

申请日：2015-12-07

Applicant: NATIONAL TSING HUA UNIVERSITY

Inventor： Sheng-Shian Li ,  Kuan-Hsien Lee ,  Cheng-Chi Chen

IPC: H03B5/30 ,  H03H9/02 ,  B81B3/00 ,  H03H9/24

CPC classification number: H03B5/30 ,  B81B3/0081 ,  B81B2201/031 ,  B81B2203/0109 ,  B81B2203/0163 ,  H03B5/04 ,  H03H9/02259 ,  H03H9/2463 ,  H03H2009/02291 ,  H03H2009/02307 ,  H03H2009/02322

Abstract: An ultra low power thermally-actuated oscillator and driving circuit thereof are provided. The ultra low power thermally-actuated oscillator includes proof masses, thermally-actuated element and a plurality of driving elements. The proof masses is symmetrically disposed and suspended from a substrate by spring structure. The thermally-actuated element is a line structure to effectively reduce the motional impedance and direct current power. Wherein, the thermally-actuated element is connected to the proof masses or the spring structure. The plurality of driving elements are respectively disposed on both sides of the thermally-actuated element to provide a driving current. When the driving current flows through the thermally-actuated element, the thermally-actuated element will be deformed and thus the proof masses will be driven to produce a harmonic oscillation.

公开(公告)号：US09571013B2

公开(公告)日：2017-02-14

申请号：US13878980

申请日：2011-10-12

Applicant: Amir Rahafrooz ,  Arash Hajjam ,  Siavash Pourkamali

Inventor： Amir Rahafrooz ,  Arash Hajjam ,  Siavash Pourkamali

IPC: H03H9/24 ,  H02N11/00 ,  H03H3/007 ,  H03H9/02 ,  G01N22/00 ,  G01N15/10

CPC classification number: H02N11/006 ,  G01N15/10 ,  G01N22/00 ,  G01N2015/1087 ,  H03H3/0072 ,  H03H9/02259 ,  H03H9/02448 ,  H03H9/2436 ,  H03H9/2463 ,  H03H2009/02283 ,  H03H2009/0233

Abstract: Embodiments of the invention include micromechanical resonators. These resonators can be fabricated from thin silicon layers. Both rotational and translational resonators are disclosed. Translational resonators can include two plates coupled by two resonate beams. A stable DC bias current can be applied across the two beams that causes the plates to resonate. In other embodiments, disk resonators can be used in a rotational mode. Other embodiments of the invention include using resonators as timing references, frequency sources, particle mass sensors, etc.

Abstract translation: 本发明的实施例包括微机械谐振器。 这些谐振器可以由薄的硅层制成。 公开了旋转和平移谐振器。 平移谐振器可以包括通过两个共振波束耦合的两个板。 可以跨越两个波束施加稳定的DC偏置电流，导致板谐振。 在其他实施例中，盘式谐振器可以以旋转模式使用。 本发明的其他实施例包括使用谐振器作为定时参考，频率源，粒子质量传感器等

公开(公告)号：US20160087600A1

公开(公告)日：2016-03-24

申请号：US14785535

申请日：2013-04-19

Applicant: KOC UNIVERSITESI

Inventor： Burhanettin Erdem Alaca ,  Yusuf Leblebici ,  Ismail Yorulmaz ,  Yasin Kilinc ,  Bekir Aksoy

IPC: H03H9/24 ,  B82B1/00 ,  H03B5/30

CPC classification number: H03H9/2463 ,  B82B1/005 ,  B82Y15/00 ,  B82Y40/00 ,  H03B5/30 ,  H03H9/2405 ,  H03H2009/02291 ,  Y10S977/762 ,  Y10S977/888 ,  Y10S977/956

Abstract: In the present invention, a nanomechanical resonator array (1), which is suitable being used in an oscillator and production method of said nanomechanical resonator array are developed. Said resonator array (1) comprises at least two resonators (2), which are in the size of nanometers, which are vertically arrayed and which are preferably in the form of nano-wire or nano-tube; at least one coupling membrane (3), which mechanically couples said resonators (2) from their one ends, and at least one clamping element (4), which supports mechanical coupling by clamping said coupling membrane (3). Said resonator array (1) can be actuated and its displacements can be sensed. The present invention develops a predictive model of the frequency response of an oscillator comprising the said resonator array (1) for electrostatic actuation and capacitive readout. An oscillator comprised of multiple resonator arrays (1) with different frequency responses connected to a frequency manipulation circuitry can be used as well. For silicon-based systems, said production method comprises the steps of patterning two windows on device silicon layer exposing it to plasma etching using Bosch process; carrying out a further oxidation to form nanowires in an oxide envelop; depositing further sacrificial material. Actuation and readout electrode integration comprises steps of electrode material deposition; self-aligned mask material deposition, chemical mechanical polishing; electrode material etch; releasing nanowires by etching sacrificial material and oxide envelope. For non-silicon-based systems, said production method comprises the steps of structural and sacrificial material deposition; patterning and anisotropic etching of both materials; isotropic etching of sacrificial material.

Abstract translation: 在本发明中，开发了适用于振荡器的纳米机械谐振器阵列（1）和所述纳米机械谐振器阵列的制造方法。 所述谐振器阵列（1）包括至少两个垂直排列的纳米尺寸的谐振器（2），其优选地是纳米线或纳米管的形式; 至少一个耦合膜（3），其将所述谐振器（2）从其一端机械耦合，以及至少一个夹紧元件（4），其通过夹紧所述耦合膜（3）来支撑机械耦合。 可以致动所述谐振器阵列（1），并且可以感测其位移。 本发明开发了包括用于静电驱动和电容读出的所述谐振器阵列（1）的振荡器的频率响应的预测模型。 也可以使用包括具有连接到频率操纵电路的不同频率响应的多个谐振器阵列（1）的振荡器。 对于基于硅的系统，所述制造方法包括以下步骤：在器件硅层上图案化两个窗口，将其暴露于使用Bosch工艺的等离子体蚀刻; 进行进一步氧化以在氧化物包层中形成纳米线; 沉积更多的牺牲材料。 驱动和读出电极整合包括电极材料沉积的步骤; 自对准掩模材料沉积，化学机械抛光; 电极材料蚀刻; 通过蚀刻牺牲材料和氧化物包层释放纳米线。 对于非硅系统，所述生​​产方法包括结构和牺牲材料沉积步骤; 两种材料的图案化和各向异性蚀刻; 牺牲材料的各向同性蚀刻。

公开(公告)号：US09246472B2

公开(公告)日：2016-01-26

申请号：US14131341

申请日：2012-07-06

Applicant: Bernard Dulmet ,  Mihaela Ivan ,  Sylvain Ballandras

Inventor： Bernard Dulmet ,  Mihaela Ivan ,  Sylvain Ballandras

IPC: H03H9/24 ,  B06B1/02 ,  H03H9/02 ,  H03H9/17

CPC classification number: H03H9/2405 ,  B06B1/0292 ,  H03H9/02259 ,  H03H9/02409 ,  H03H9/174 ,  H03H9/2463

Abstract: The invention relates to an acoustic volume wave resonator including a mounting, a resonating substrate, and a diaphragm. The mounting comprises an internal cavity and an internal electrode, so as to form a gap area between the internal electrode and a portion of the diaphragm. The resonating substrate is configured to generate longitudinal mode acoustic waves vibrating at the work frequency of the resonator, when an electrostatic field having a sinusoidal component at a work frequency is generated in the gap area by applying a differential voltage between the diaphragm or the first surface of the resonating substrate on the one hand and the internal electrode on the other hand.

Abstract translation: 本发明涉及包括安装件，谐振基板和隔膜的声体积波谐振器。 安装件包括内部空腔和内部电极，以在内部电极和隔膜的一部分之间形成间隙区域。 谐振衬底被配置为当通过在隔膜或第一表面之间施加差分电压而在间隙区域中产生具有工作频率的正弦分量的静电场时，产生在谐振器的工作频率下振动的纵向模式声波 一方面是共振衬底，另一方面是内部电极。