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    METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE HAVING PHOTO DIODE
    1.
    发明申请
    METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DEVICE HAVING PHOTO DIODE 有权
    制造具有照相二极管的有机发光器件的方法

    公开(公告)号：US20090011528A1

    公开(公告)日：2009-01-08

    申请号：US12098653

    申请日：2008-04-07

    申请人： YUN-GYU LEE ,  Hye-hyang Park ,  Ki-ju Im ,  Byoung-deog Choi

    发明人： YUN-GYU LEE ,  Hye-hyang Park ,  Ki-ju Im ,  Byoung-deog Choi

    IPC分类号： H01L51/56

    CPC分类号： H01L27/1214 ,  H01L27/3269

    摘要： A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.

    摘要翻译： 一种制造包括光电二极管和晶体管的有机发光器件的方法，包括在形成在衬底上的缓冲层的分离部分上形成第一半导体层和第二半导体层; 在所述第一半导体层上形成栅极金属层，所述栅极金属层覆盖所述第一半导体层的中心区域; 通过在不被栅极金属层覆盖的第一半导体层的区域中注入杂质来形成第一半导体层中的高浓度P掺杂区域和高浓度N掺杂区域以形成光电二极管; 在所述第二半导体层中形成源极和漏极区域和沟道区域; 并且通过蚀刻从第一半导体层的中心区域去除栅极金属层，并通过蚀刻同时形成栅电极，栅电极与第二半导体层的沟道区域绝缘，以形成晶体管。

    ORGANIC LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    ORGANIC LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光元件及其制造方法

    公开(公告)号：US20090008665A1

    公开(公告)日：2009-01-08

    申请号：US12098641

    申请日：2008-04-07

    申请人： YUN-GYU LEE ,  Byoung-deog Choi

    发明人： YUN-GYU LEE ,  Byoung-deog Choi

    IPC分类号： H01L33/00 ,  H01L21/00

    CPC分类号： H01L27/3227 ,  H01L27/3269

    摘要： An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode.

    摘要翻译： 有机发光元件包括形成在衬底上的有机发光二极管，耦合到包括栅极，源极和漏极的晶体管，并且包括第一电极，有机薄膜层和第二电极; 形成在基板上并具有包括高浓度P掺杂区域，低浓度P掺杂区域，本征区域和高浓度N掺杂区域的半导体层的光电二极管; 以及控制器，其通过根据从光电二极管输出的电压控制施加到第一电极和第二电极的电压，将从有机发光二极管发出的光的亮度控制到恒定水平。

    Organic light emitting element and method of manufacturing the same
    3.
    发明授权
    Organic light emitting element and method of manufacturing the same 有权
    有机发光元件及其制造方法

    公开(公告)号：US08592881B2

    公开(公告)日：2013-11-26

    申请号：US12098641

    申请日：2008-04-07

    申请人： Yun-gyu Lee ,  Byoung-deog Choi ,  Hye-hyang Park ,  Ki-ju Im

    发明人： Yun-gyu Lee ,  Byoung-deog Choi ,  Hye-hyang Park ,  Ki-ju Im

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L27/3227 ,  H01L27/3269

    摘要： An organic light emitting element includes an organic light emitting diode formed on a substrate, coupled to a transistor including a gate, a source and a drain and including a first electrode, an organic thin film layer and a second electrode; a photo diode formed on the substrate and having a semiconductor layer including a high-concentration P doping region, a low-concentration P doping region, an intrinsic region and a high-concentration N doping region; and a controller that controls luminance of light emitted from the organic light emitting diode, to a constant level by controlling a voltage applied to the first electrode and the second electrode according to the voltage outputted from the photo diode.

    摘要翻译： 有机发光元件包括形成在衬底上的有机发光二极管，耦合到包括栅极，源极和漏极的晶体管，并且包括第一电极，有机薄膜层和第二电极; 形成在基板上并具有包括高浓度P掺杂区域，低浓度P掺杂区域，本征区域和高浓度N掺杂区域的半导体层的光电二极管; 以及控制器，其通过根据从光电二极管输出的电压控制施加到第一电极和第二电极的电压，将从有机发光二极管发出的光的亮度控制到恒定水平。

    Method of manufacturing organic light emitting device having photo diode
    4.
    发明授权
    Method of manufacturing organic light emitting device having photo diode 有权
    制造具有光电二极管的有机发光器件的方法

    公开(公告)号：US07977126B2

    公开(公告)日：2011-07-12

    申请号：US12098653

    申请日：2008-04-07

    申请人： Yun-gyu Lee ,  Hye-hyang Park ,  Ki-ju Im ,  Byoung-deog Choi

    发明人： Yun-gyu Lee ,  Hye-hyang Park ,  Ki-ju Im ,  Byoung-deog Choi

    IPC分类号： H01L21/00 ,  H01L51/40 ,  H01L21/425

    CPC分类号： H01L27/1214 ,  H01L27/3269

    摘要： A method for manufacturing an organic light emitting device including a photo diode and a transistor includes forming a first semiconductor layer and a second semiconductor layer on separate portions of a buffer layer formed on the substrate; forming a gate metal layer on the first semiconductor layer, the gate metal layer covering a central region of the first semiconductor layer; forming a high-concentration P doping region and a high-concentration N doping region in the first semiconductor layer by injecting impurities into regions of the first semiconductor layer not covered by the gate metal layer to form the photodiode; forming a source and drain region and a channel region in the second semiconductor layer; and removing the gate metal layer from the central region of the first semiconductor layer by etching and simultaneously forming a gate electrode by etching, the gate electrode being insulated from the channel region of the second semiconductor layer, to form the transistor.

    摘要翻译： 一种制造包括光电二极管和晶体管的有机发光器件的方法，包括在形成在衬底上的缓冲层的分离部分上形成第一半导体层和第二半导体层; 在所述第一半导体层上形成栅极金属层，所述栅极金属层覆盖所述第一半导体层的中心区域; 通过在不被栅极金属层覆盖的第一半导体层的区域中注入杂质来形成第一半导体层中的高浓度P掺杂区域和高浓度N掺杂区域以形成光电二极管; 在所述第二半导体层中形成源极和漏极区域和沟道区域; 并且通过蚀刻从第一半导体层的中心区域去除栅极金属层，并通过蚀刻同时形成栅电极，栅电极与第二半导体层的沟道区域绝缘，以形成晶体管。