摘要:
Provided are a variable resistance memory device and a method of forming the same. The variable resistance memory device may include a substrate, a plurality of bottom electrodes on the substrate, and a first interlayer insulating layer including a trench formed therein. The trench exposes the bottom electrodes and extends in a first direction. The variable resistance memory device further includes a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction and a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode.
摘要:
A method of forming a phase change material layer pattern includes forming a phase change material layer partially filling an opening through an insulating interlayer. A plasma treatment process is performed on the phase change material layer to remove an oxide layer on a surface of the phase change material layer. A heat treatment process is performed on the phase change material layer to remove a void or a seam in the phase change material layer, sufficiently filling the opening.
摘要:
A short pulse rejection circuit may include an edge detector, a filter circuit, a comparison circuit, and a gating circuit. The edge detector may delay an input signal to generate a delayed input signal, and detect an edge of the input signal to generate an edge detection signal. The filter circuit may perform a low pass filtering on the edge detection signal to generate a first signal. The comparison circuit may compare the first signal with a reference voltage. The gating circuit may gate the delayed input signal based on an output signal of the comparison circuit. Therefore, the short pulse rejection circuit may have a sufficient setup/hold time margin of a flip-flop, and may sample an input signal even when a state of the input signal does not change during an initial operation.
摘要:
A transmission gate switch includes a switching unit to conduct a switching operation between first and second nodes in response to a switching signal, and an isolation unit to prevent the switching unit from being turned on by a negative swing of the first or second node while the switching unit is being turned off.
摘要:
A power supply circuit including a voltage regulator and a headphone driving circuit employing the same are disclosed. In accordance with the present invention, the power supply circuit may provide stable power supply to the amplifier since the power supply circuit generates the constant voltage +Vreg and the constant voltage −Vreg from +VDD robust to stronger than a power noise, and the balanced signal path for isolating the noise of the input signal to be amplified is not required, thereby simplifying the constitution of the circuit.
摘要:
Provided is a tubular torsion beam for rear suspensions of vehicles, which is produced according to a more durable design capable of improving roll stiffness and roll strength of the tubular torsion beam. The tubular torsion beam is produced by pressure-forming a tubular steel member through hydroforming such that the tubular torsion beam has a cross-section varying along an entire length thereof, with opposite ends having a closed cross-section and mounted to respective trailing arms, a middle portion having a V-shaped open cross-section, and a transitional portion having a varying cross-section and connecting the middle portion to each of the opposite ends. During the process of manufacturing the tubular torsion beam, the opposite ends of the tubular steel member are fed using respective axial punches of a hydroforming machine, so that the opposite ends are thicker than the middle portion.
摘要:
Methods of manufacturing non-volatile memory devices may include separating first phase-change material groups and second phase-change material groups, which have different sizes, from a target including phase-change materials and faulting a phase-change material layer on an object by using the first phase-change material groups and the second phase-change material groups.
摘要:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.
摘要:
A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material.