公开(公告)号：US08098525B2

公开(公告)日：2012-01-17

申请号：US12232437

申请日：2008-09-17

申请人： Yaal Horesh ,  Oleg Dadashev ,  Yoram Betser ,  Avri Harush

发明人： Yaal Horesh ,  Oleg Dadashev ,  Yoram Betser ,  Avri Harush

IPC分类号： G11C16/04

CPC分类号： G11C16/0475 ,  G11C7/12 ,  G11C7/18 ,  G11C16/26

摘要： The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle.

摘要翻译： 管道效应可以显着降低闪存性能。 公开了一种显着减少管电流和（或使用预充电顺序的相邻电流）的方法。 专用的读取顺序使感测节点面向预先充电的管道的部分。 该技术涉及预充电几个全局位线（例如金属位线或MBL）和本地位线（例如扩散位线或DBL）。 根据每个地址的预定义表格选择预充电的全局位线。 根据在下一个读取周期期间这些全局位线是否会干扰管道，完成全局位线的选择。

公开(公告)号：US20120063238A1

公开(公告)日：2012-03-15

申请号：US13301826

申请日：2011-11-22

申请人： Yaal Horesh ,  Oleg Dadashev ,  Yoram Betser ,  Avri Harush

发明人： Yaal Horesh ,  Oleg Dadashev ,  Yoram Betser ,  Avri Harush

IPC分类号： G11C16/06

CPC分类号： G11C16/0475 ,  G11C7/12 ,  G11C7/18 ,  G11C16/26

摘要： The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle.

摘要翻译： 管道效应可以显着降低闪存性能。 公开了一种显着减少管电流和（或使用预充电顺序的相邻电流）的方法。 专用的读取顺序使感测节点面向预先充电的管道的部分。 该技术涉及预充电几个全局位线（例如金属位线或MBL）和本地位线（例如扩散位线或DBL）。 根据每个地址的预定义表格选择预充电的全局位线。 根据在下一个读取周期期间这些全局位线是否会干扰管道，完成全局位线的选择。

公开(公告)号：US08593881B2

公开(公告)日：2013-11-26

申请号：US13301826

申请日：2011-11-22

申请人： Yaal Horesh ,  Oleg Dadashev ,  Yoram Betser ,  Avri Harush

发明人： Yaal Horesh ,  Oleg Dadashev ,  Yoram Betser ,  Avri Harush

IPC分类号： G11C16/04

CPC分类号： G11C16/0475 ,  G11C7/12 ,  G11C7/18 ,  G11C16/26

摘要： The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines are selected according to a pre-defined table per each address. The selection of the global bitlines is done according to whether these global bitlines will interfere with the pipe during the next read cycle.

摘要翻译： 管道效应可以显着降低闪存性能。 公开了一种显着减少管电流和（或使用预充电顺序的相邻电流）的方法。 专用的读取顺序使感测节点面向预先充电的管道的部分。 该技术涉及预充电几个全局位线（例如金属位线或MBL）和本地位线（例如扩散位线或DBL）。 根据每个地址的预定义表格选择预充电的全局位线。 根据在下一个读取周期期间这些全局位线是否会干扰管道，完成全局位线的选择。

公开(公告)号：US20090073774A1

公开(公告)日：2009-03-19

申请号：US12232437

申请日：2008-09-17

申请人： Yaal Horesh ,  Oleg Dadashev ,  Yoram Betser ,  Avri Harush

发明人： Yaal Horesh ,  Oleg Dadashev ,  Yoram Betser ,  Avri Harush

IPC分类号： G11C16/06 ,  G11C7/00

CPC分类号： G11C16/0475 ,  G11C7/12 ,  G11C7/18 ,  G11C16/26

摘要： The pipe effect can significantly degrade flash performance. A method to significantly reduce pipe current and (or neighbor current using a pre-charge sequence) is disclosed. A dedicated read order keeps the sensing node facing the section of the pipe which was pre-charged. The technique involves pre-charging several global bitlines (such as metal bitlines, or MBLs) and local bitlines (such as diffusion bitlines, or DBLs). The pre-charged global bitlines may be selected according to a pre-defined table per each address. The selection of the global bitlines may be done according to whether these global bitlines will interfere with the pipe during the next read cycle.

摘要翻译： 管道效应可以显着降低闪存性能。 公开了一种显着减少管电流和（或使用预充电顺序的相邻电流）的方法。 专用的读取顺序使感测节点面向预先充电的管道的部分。 该技术涉及预充电几个全局位线（例如金属位线或MBL）和本地位线（例如扩散位线或DBL）。 可以根据每个地址的预定义表来选择预充电的全局位线。 可以根据在下一个读取周期期间这些全局位线是否会干扰管道来完成全局位线的选择。