公开(公告)号：US06585826B2

公开(公告)日：2003-07-01

申请号：US10000891

申请日：2001-11-02

申请人： Yali Tai ,  Shih-Chi Lin ,  Wen-Long Lee ,  Francis Wang ,  Szu-An Wu ,  Hsi-Kuei Cheng ,  Ying-Lang Wang

发明人： Yali Tai ,  Shih-Chi Lin ,  Wen-Long Lee ,  Francis Wang ,  Szu-An Wu ,  Hsi-Kuei Cheng ,  Ying-Lang Wang

IPC分类号： C23G102

CPC分类号： H01L21/02063 ,  B08B1/00 ,  B08B3/04 ,  B08B3/12 ,  C11D7/265 ,  C11D11/0047 ,  H01L21/02074 ,  H01L21/67046 ,  H01L21/67057 ,  H01L21/67086 ,  Y10S134/902

摘要： A method of removing residual contamination including metal nitride particles from semiconductor wafer surfaces including the steps of: providing at least one semiconductor wafer with metal nitride particles adhering to the at least one semiconductor wafer surface thereto; subjecting the at least one semiconductor wafer to at least one mechanical brushing process while a cleaning solution including a carboxylic acid is supplied to at least one semiconductor wafer surface; and, subjecting the at least one semiconductor wafer to an a sonic cleaning process including the carboxylic acid cleaning solution.

摘要翻译： 一种从半导体晶片表面去除包括金属氮化物颗粒的残留污染的方法，包括以下步骤：向至少一个半导体晶片提供附着在至少一个半导体晶片表面上的金属氮化物颗粒; 使至少一个半导体晶片进行至少一个机械刷洗过程，同时将包含羧酸的清洁溶液供应到至少一个半导体晶片表面; 以及对所述至少一个半导体晶片进行包括所述羧酸清洁溶液的声波清洁处理。