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50 条记录 (耗时 0.032 秒)

    Hillock reduction in copper films
    4.
    发明申请
    Hillock reduction in copper films 有权
    铜膜中的小丘减少

    公开(公告)号：US20060270227A1

    公开(公告)日：2006-11-30

    申请号：US11136238

    申请日：2005-05-24

    申请人： Shih-Chi Lin ,  Francis Wang ,  Wen-Long Lee ,  Szu-An Wu

    发明人： Shih-Chi Lin ,  Francis Wang ,  Wen-Long Lee ,  Szu-An Wu

    IPC分类号： H01L29/40 ,  H01L23/52 ,  H01L23/48 ,  H01L21/44

    CPC分类号： H01L21/76877 ,  H01L21/02074 ,  Y10S438/906

    摘要： A method for treating a copper surface of a semiconductor device provides exposing the copper surface to a citric acid solution after the surface is formed using CMP (chemical mechanical polishing) or other methods. The citric acid treatment may take place during a cleaning operation that takes place in a wafer scrubber, or subsequent to such an operation. The citric acid treatment removes copper oxides that form on copper surfaces exposed to the environment and prevents hillock formation during subsequent high temperature operations. The copper surface is then annealed and the annealing followed by an NH3 plasma treatment which again removes any copper oxides that may be present. The NH3 plasma operation roughens exposed surfaces improving the adhesion of subsequently-formed films such as a dielectric film preferably formed in-situ with the NH3 plasma treatment. The subsequently-formed film is formed over an oxide-free, hillock-free copper surface.

    摘要翻译： 用于处理半导体器件的铜表面的方法在使用CMP（化学机械抛光）或其它方法形成表面之后，使铜表面暴露于柠檬酸溶液。 柠檬酸处理可以在在晶圆洗涤器中进行的清洁操作中或者在这种操作之后进行。 柠檬酸处理除去在暴露于环境的铜表面上形成的铜氧化物，并防止在随后的高温操作期间形成小丘。 然后将铜表面退火并进行退火，然后进行NH 3等离子体处理，其再次除去可能存在的任何铜氧化物。 NH 3等离子体操作使暴露的表面粗糙化，改善随后形成的膜的粘附性，例如优选用NH 3等离子体处理原位形成的电介质膜。 随后形成的膜形成在无氧化物的无小丘的铜表面上。

    Chamber leakage detection by measurement of reflectivity of oxidized thin film
    5.
    发明授权
    Chamber leakage detection by measurement of reflectivity of oxidized thin film 失效
    通过测量氧化薄膜的反射率进行室内泄漏检测

    公开(公告)号：US06985222B2

    公开(公告)日：2006-01-10

    申请号：US10423379

    申请日：2003-04-25

    申请人： Hsi-Kuei Cheng ,  Chu-Chang Chen ,  Ting-Chun Wang ,  Szu-An Wu ,  Ying-Lang Wang ,  Hsien-Ping Feng

    发明人： Hsi-Kuei Cheng ,  Chu-Chang Chen ,  Ting-Chun Wang ,  Szu-An Wu ,  Ying-Lang Wang ,  Hsien-Ping Feng

    IPC分类号： G01N21/88

    CPC分类号： G01N21/55 ,  G01N21/8422 ,  G01N2201/0227

    摘要： A system and method for detecting chamber leakage by measuring the reflectivity of an oxidized thin film. In a preferred embodiment, a method of detecting leaks in a chamber includes providing a first monitor workpiece, placing the first monitor workpiece in the chamber, and forming at least one film on the first monitor workpiece. The reflectivity of the least one film of the first monitor workpiece is measured, wherein the reflectivity indicates whether there are leaks in the at least one seal of the chamber. In another embodiment, the method includes providing a second monitor workpiece, placing the second monitor workpiece in the chamber, and forming at least one film on the second monitor workpiece. The reflectivity of the at least one film of the second monitor workpiece is measured, and the second monitor workpiece film reflectivity is compared to the first monitor workpiece film reflectivity.

    摘要翻译： 通过测量氧化薄膜的反射率来检测室泄漏的系统和方法。 在优选实施例中，检测腔室泄漏的方法包括提供第一监测工件，将第一监测器工件放置在腔室中，以及在第一监测器工件上形成至少一个膜。 测量第一监视器工件的至少一个膜的反射率，其中反射率指示在室的至少一个密封件中是否有泄漏。 在另一个实施例中，该方法包括提供第二监视器工件，将第二监视器工件放置在腔室中，以及在第二监视器工件上形成至少一个膜。 测量第二监测工件的至少一个膜的反射率，并将第二监测工件膜反射率与第一监测工件膜反射率进行比较。

    Method of manufacturing a very deep STI (shallow trench isolation)
    6.
    发明授权
    Method of manufacturing a very deep STI (shallow trench isolation) 有权
    制造非常深的STI（浅沟槽隔离）的方法

    公开(公告)号：US06436791B1

    公开(公告)日：2002-08-20

    申请号：US09880259

    申请日：2001-06-14

    申请人： Shih-Chi Lin ,  Szu-An Wu ,  Ying-Lang Wang ,  Guey-Bao Huang

    发明人： Shih-Chi Lin ,  Szu-An Wu ,  Ying-Lang Wang ,  Guey-Bao Huang

    IPC分类号： H01L21302

    CPC分类号： H01L21/76224

    摘要： A method of forming a shallow trench isolation structure comprising the following steps. A substrate having an upper surface is provided. A pad oxide layer is formed upon the substrate. A nitride layer is formed over the pad oxide layer. The nitride layer having an upper surface. A trench is formed by etching the nitride layer, pad oxide layer and a portion of the substrate. The trench having a bottom and side walls. An oxide film is deposited upon the etched nitride layer surface, and the bottom and side walls of trench. The oxide film is removed from over the etched nitride layer surface, and the bottom of the trench to expose a portion of substrate within the trench. The removal of oxide film leaving oxide spacers over the trench side walls. Epitaxial silicon is selectively deposited over the exposed portion of substrate, filling the trench. A thermal oxide layer is formed over the epitaxial silicon, annealing the interface between the epitaxial silicon and the oxide spacers. The etched nitride layer and the oxide layer from over the etched substrate; and a portion of the oxide spacers extending above the surface of the etched substrate are removed, whereby the shallow trench isolation structure is formed within the trench.

    摘要翻译： 一种形成浅沟槽隔离结构的方法，包括以下步骤。 提供具有上表面的基板。 衬底氧化层形成在衬底上。 在衬垫氧化物层上形成氮化物层。 氮化物层具有上表面。 通过蚀刻氮化物层，衬垫氧化物层和衬底的一部分来形成沟槽。 沟槽具有底部和侧壁。 在蚀刻的氮化物层表面和沟槽的底部和侧壁上沉积氧化物膜。 从蚀刻的氮化物层表面上方的氧化膜和沟槽的底部去除氧化膜，以露出沟槽内的衬底的一部分。 去除在沟槽侧壁上留下氧化物间隔物的氧化物膜。 外延硅被选择性地沉积在衬底的暴露部分上，填充沟槽。 在外延硅上形成热氧化层，退火外延硅与氧化物间隔物之间​​的界面。 蚀刻的氮化物层和来自蚀刻的衬底上的氧化物层; 并且去除在蚀刻的衬底的表面上方延伸的氧化物间隔物的一部分，由此在沟槽内形成浅沟槽隔离结构。

    Shallow trench isolation process
    8.
    发明授权
    Shallow trench isolation process 有权
    浅沟槽隔离工艺

    公开(公告)号：US06784077B1

    公开(公告)日：2004-08-31

    申请号：US10270973

    申请日：2002-10-15

    申请人： Shih-Chi Lin ,  Chih Chung Lee ,  Guey Bao Huang ,  Szu-An Wu ,  Ying Lang Wang ,  Chun Chun Yeh

    发明人： Shih-Chi Lin ,  Chih Chung Lee ,  Guey Bao Huang ,  Szu-An Wu ,  Ying Lang Wang ,  Chun Chun Yeh

    IPC分类号： H01L2176

    CPC分类号： H01L21/76224

    摘要： A method of forming a silicon oxide, shallow trench isolation (STI) region, featuring a silicon rich, silicon oxide layer used to protect the STI region from a subsequent wet etch procedure, has been developed. The method features depositing a silicon oxide layer via PECVD procedures, without RF bias, using a high silane to oxygen ratio, resulting in a silicon rich, silicon oxide layer, located surrounding the STI region. The low etch rate of the silicon rich, silicon oxide layer, protect the silicon oxide STI region from buffered hydrofluoric wet etch procedures, used for removal of a dioxide pad layer.

    摘要翻译： 已经开发了一种形成氧化硅，浅沟槽隔离（STI）区域的方法，其特征在于用于保护STI区域免受后续湿蚀刻过程的富硅氧化硅层。 该方法的特征是通过PECVD方法沉积氧化硅层，无需RF偏压，使用高硅烷与氧气比，导致位于STI区周围的富含硅的氧化硅层。 富硅氧化硅层的低蚀刻速率保护硅氧化物STI区域免受用于去除二氧化物焊盘层的缓冲氢氟酸湿蚀刻工艺。

    Method to solve particle performance of FSG layer by using UFU season film for FSG process
    10.
    发明授权
    Method to solve particle performance of FSG layer by using UFU season film for FSG process 有权
    通过使用UFU季膜对FSG过程解决FSG层的粒子性能的方法

    公开(公告)号：US06479098B1

    公开(公告)日：2002-11-12

    申请号：US09747135

    申请日：2000-12-26

    申请人： Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

    发明人： Ming-Hwa Yoo ,  Yi-Lung Cheng ,  Szu-An Wu ,  Ying-Lang Wang

    IPC分类号： C23C1640

    CPC分类号： H01J37/32477 ,  C23C16/4404 ,  Y10T428/2495 ,  Y10T428/265

    摘要： A method for reducing contaminants in a processing chamber 10 having chamber plasma processing region components comprising the following steps. The chamber plasma processing region components are cleaned. The chamber is then seasoned as follows. A first USG layer is formed over the chamber plasma processing region components. An FSG layer is formed over the first USG layer. A second USG layer is formed over the FSG layer. Wherein the USG, FSG, and second USG layers comprise a UFU season film. A UFU season film coating the chamber plasma processing region components of a processing chamber comprises: an inner USG layer over the chamber plasma processing region components; an FSG layer over the inner USG layer; and an outer USG layer over the FSG layer.

    摘要翻译： 一种用于减少具有室等离子体处理区域部件的处理室10中的污染物的方法，包括以下步骤。 腔室等离子体处理区域部件被清洁。 然后如下调节室。 在室等离子体处理区域部件上形成第一USG层。 在第一USG层上形成FSG层。 在FSG层上形成第二个USG层。 其中USG，FSG和第二USG层包括UFU季电影。 UFU季涂膜处理室的室等离子体处理区域部件包括：室上的内部USG层等离子体处理区域部件; 内部USG层上的FSG层; 以及FSG层上的外部USG层。