Reinforcing Connector for Shade Screen
    1.
    发明申请

    公开(公告)号:US20200002969A1

    公开(公告)日:2020-01-02

    申请号:US16022314

    申请日:2018-06-28

    申请人: Yan JIN Qing Feng LYU

    发明人: Yan JIN Qing Feng LYU

    IPC分类号: E04H15/54 E04H15/32 E04H15/64

    摘要: A shade screen includes a screen fabric, a tightening wire and a reinforcing connector. The reinforcing connector includes a head connecting member and a reinforcing body. The head connecting member has a through connecting slot and a peripheral securing slot. The reinforcing body has a receiving cavity, a first reinforcing groove and a second reinforcing groove formed on two sides of the receiving cavity respectively. The first reinforcing groove and the second reinforcing groove are aligned with two ends of the peripheral securing slot in such a manner that a corner portion of the screen fabric is securely attached in the receiving cavity, while the tightening portion of the tightening wire is arranged to pass through the first reinforcing groove and the second reinforcing groove and fittedly receive in the peripheral securing slot.

    MITIGATION OF IRRIGATION WATER USING ZERO-VALENT IRON TREATMENT
    2.
    发明申请
    MITIGATION OF IRRIGATION WATER USING ZERO-VALENT IRON TREATMENT 审中-公开
    使用零点铁处理减少灌溉水

    公开(公告)号:US20110309021A1

    公开(公告)日:2011-12-22

    申请号:US13166358

    申请日:2011-06-22

    申请人: Yan JIN Pei Chiu

    发明人: Yan JIN Pei Chiu

    IPC分类号: C02F1/28 C02F1/58 C02F1/72

    摘要: In one embodiment, this invention relates to a treatment for irrigation water by removing microbiological impurities and DBP precursors, utilizing filtration media comprising zero-valent metal to retain and inactivate microbiological agents such as viruses and bacteria such as Escherichia coli. One of the objectives of the present invention is to remove microbiological agents such as E. coli O157:H7 and Salmonella from irrigation water.

    摘要翻译: 在一个实施方案中,本发明涉及通过除去微生物杂质和DBP前体,利用包含零价金属的过滤介质来保留和灭活诸如病毒和细菌如大肠杆菌的微生物剂来治疗灌溉水。 本发明的目的之一是从灌溉水中除去微生物剂如大肠杆菌O157:H7和沙门氏菌。

    HIGH VOLTAGE DEVICE
    3.
    发明申请
    HIGH VOLTAGE DEVICE 有权
    高电压设备

    公开(公告)号:US20100213544A1

    公开(公告)日:2010-08-26

    申请号:US12390509

    申请日:2009-02-23

    IPC分类号: H01L29/78 H01L21/336

    摘要: A method of forming a device is presented. A substrate prepared with an active device region is provided. The active device region includes gate stack layers of a gate stack that includes at least a gate electrode layer over a gate dielectric layer. An implant mask is formed on the substrate with an opening exposing a portion of a top gate stack layers. Ions are implanted through the opening and gate stack layers into the substrate to form a channel well. The substrate is patterned to at least remove portion of a top gate stack layer unprotected by the implant mask.

    摘要翻译: 提出了一种形成装置的方法。 提供了用有源器件区域制备的衬底。 有源器件区域包括栅叠层的栅堆叠层,其至少包括栅电介质层上的栅极电极层。 在衬底上形成一种植入掩模,该开口露出顶部栅极堆叠层的一部分。 离子通过开口和栅极堆叠层被注入到衬底中以形成通道。 将衬底图案化以至少去除未被植入物掩模保护的顶部栅极叠层的部分。