摘要:
A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion implantation process is performed to a second surface of the substrate to form a second doping layer. After that, an annealing process is performed to the structure formed by the substrate, the first doping layer and the second doping layer, and forming a first passivation layer on the first doping layer and a second passivation layer on the second doping layer by the annealing process. A third passivation layer is formed on the first passivation layer formed after the annealing process and a fourth passivation layer is formed on the second passivation layer formed after the annealing process. Afterward, conductive electrodes are formed on the third passivation layer and the fourth passivation layer, respectively.
摘要:
A solar energy cell includes a photoelectric conversion layer, an anti-reflection layer and a plurality of electrical conductive channels. The anti-reflection layer is disposed on the photoelectric conversion layer. The electrical conductive channels are disposed on the anti-reflection layer and electrically connected with the photoelectric conversion layer, wherein the electrical conductive channels include a conductive paste and pigments to enable a color thereof to be substantially the same as a color of the anti-reflection layer.
摘要:
An electrically conductive ribbon, which is soldered on an electrically conductive busbar of a photovoltaic panel, includes a cooper core and a tin based solder. The tin based solder fully wraps an outer surface of the cooper core, and has a convex solder surface, which has a first curvature to be fitted with a second curvature of a concave solder surface of the electrically conductive busbar.
摘要:
A manufacturing method of electrode of solar cell panel of the present invention comprises steps of providing a semiconductor substrate with an antireflection layer/a dielectric layer and a first metal layer in sequence, forming a first metal layer on the antireflection layer, projecting a pattern on the first metal layer by a laser beam to form a metal silicide on the semiconductor substrate in accordance with the outline of the pattern, removing the first metal layer by a chosen solution, forming a first electrode connecting to the metal silicide and exposed to a surface of the antireflection layer; and forming a second electrode on a surface of the semiconductor substrate opposite to the antireflection layer.