公开(公告)号：US12021030B2

公开(公告)日：2024-06-25

申请号：US17219949

申请日：2021-04-01

申请人： Yangtze Memory Technologies Co., Ltd.

发明人： Wei Xu ,  Qingqing Wang ,  Jinxing Chen ,  Guanglong Fan ,  Huichao Liu

IPC分类号： H01L23/535 ,  H01L21/3105 ,  H01L21/768 ,  H01L27/00 ,  H10B43/27

CPC分类号： H01L23/535 ,  H01L21/31053 ,  H01L21/76805 ,  H01L21/76819 ,  H01L21/76895 ,  H10B43/27

摘要： Aspects of the disclosure provide a semiconductor device. The semiconductor device can include a trench formed in a first dielectric layer, a trench filler layer that fills a portion of the trench, a conductive layer over the trench filler layer, and a second dielectric layer over the conductive layer. The second dielectric layer is disposed in the trench. The semiconductor device can also include a contact structure configured to connect to the conductive layer through a hole in the second dielectric layer.