公开(公告)号：US20240365544A1

公开(公告)日：2024-10-31

申请号：US18473896

申请日：2023-09-25

申请人： Yangtze Memory Technologies Co., Ltd.

发明人： Quanshan Lv ,  Jie Yuan ,  YaLi Song

IPC分类号： H10B43/27 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/35 ,  H10B43/40

CPC分类号： H10B43/27 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/35 ,  H10B43/40

摘要： Examples of the present application provide a three-dimensional memory and manufacturing method thereof, and a memory system. The three-dimensional memory comprises: a stack structure comprising alternating stacked gate layers and dielectric layers; a plurality of channel columns penetrating the stack structure in a first direction and comprising: a barrier layer, a storage layer, a tunneling layer, and a channel layer arranged in sequence; and a plurality of isolation structures located between the dielectric layers and the tunneling layer in a second direction perpendicular to the first direction; wherein the isolation structures penetrating at least a portion of the storage layer in the second direction.