公开(公告)号：US08221594B2

公开(公告)日：2012-07-17

申请号：US12883490

申请日：2010-09-16

申请人： Yasuhiko Akamatsu ,  Kyuzo Nakamura ,  Motoshi Kobayashi ,  Junya Kiyota ,  Tomiyuki Yukawa ,  Masaki Takei ,  Yuuichi Oishi ,  Makoto Arai ,  Satoru Ishibashi

发明人： Yasuhiko Akamatsu ,  Kyuzo Nakamura ,  Motoshi Kobayashi ,  Junya Kiyota ,  Tomiyuki Yukawa ,  Masaki Takei ,  Yuuichi Oishi ,  Makoto Arai ,  Satoru Ishibashi

IPC分类号： C23C14/35

CPC分类号： C23C14/35 ,  H01J37/3408 ,  H01J37/3444

摘要： The present invention is to provide a magnetron sputtering technique for forming a film having an even film thickness distribution for a long period of time. A magnetron sputtering apparatus of the present invention includes a vacuum chamber, a cathode part provided in the vacuum chamber, the cathode part holding a target on the front side thereof and having a backing plate to hold a plurality of magnets on the backside thereof, and a direct-current power source that supplies direct-current power to the cathode part. A plurality of control electrodes, which independently controls potentials, is provided in a discharge space on the side of the target with respect to the backing plate.

摘要翻译： 本发明提供一种用于长时间形成具有均匀膜厚分布的膜的磁控溅射技术。 本发明的磁控管溅射装置包括真空室，真空室中设置的阴极部分，阴极部分在其前侧保持靶材，并具有背板，用于将多个磁体保持在其背面;以及 向阴极部供给直流电力的直流电源。 独立地控制电位的多个控制电极相对于背板设置在靶的侧面的放电空间中。