公开(公告)号：US5474941A

公开(公告)日：1995-12-12

申请号：US154116

申请日：1993-11-18

申请人： Yasuhiro Mitani ,  Hirohisa Tanaka ,  Hirosshi Morimoto ,  Tomohiko Yamamoto

发明人： Yasuhiro Mitani ,  Hirohisa Tanaka ,  Hirosshi Morimoto ,  Tomohiko Yamamoto

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78666 ,  H01L29/78669 ,  H01L29/78675

摘要： A method for producing an active matrix substrate using a thin film transistor having a gate electrode on an insulating substrate covered with a gate insulating layer, a semiconductor layer on the gate insulating layer, a channel protective layer on the semiconductor layer, a drain electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the semiconductor layer and the channel protective layer, and a source electrode having a portion overlying the gate electrode with the interposition of the gate insulating layer, the method enhancing the transistor characteristics of the active matrix substrate with minimum leakage and the removal of an off-current generated from the presence of electrons and holes.

摘要翻译： 一种使用在栅绝缘层覆盖的绝缘基板上具有栅电极的薄膜晶体管制造有源矩阵基板的方法，栅极绝缘层上的半导体层，半导体层上的沟道保护层，具有 通过插入栅极绝缘层，半导体层和沟道保护层覆盖栅电极的部分，以及具有覆盖栅电极的部分的源电极，插入栅极绝缘层，该方法增强晶体管特性 的有源矩阵基板，具有最小的泄漏和去除由电子和空穴的存在产生的截止电流。