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公开(公告)号：US07646055B2
公开(公告)日：2010-01-12
申请号：US12219402
申请日：2008-07-22
IPC分类号： H01L29/788
CPC分类号： H01L21/28273 , H01L21/76232 , H01L27/115 , H01L27/11521
摘要： A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer.
摘要翻译： 一种方法包括以下步骤：将绝缘膜引入沟槽以提供沟槽隔离; 平坦化沟槽隔离以暴露钝化膜; 以及去除所述钝化膜并在第一硅层上沉积第二硅层和所述沟槽隔离; 并且在沉积第一硅层的步骤中，第一硅层是未掺杂的硅层，并且在沉积第二硅层的步骤中，第二硅层是掺杂硅层或随后具有引入杂质的未掺杂硅层，或 并且通过随后的热滞后热扩散到第一硅层中。
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公开(公告)号：US20050287777A1
公开(公告)日：2005-12-29
申请号：US11159389
申请日：2005-06-23
IPC分类号： H01L21/00 , H01L21/04 , H01L21/28 , H01L21/762 , H01L21/8247 , H01L27/115
CPC分类号： H01L27/11521 , H01L21/76232 , H01L27/115 , H01L29/40114
摘要： A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer.
摘要翻译： 一种方法包括以下步骤：将绝缘膜引入沟槽以提供沟槽隔离; 平坦化沟槽隔离以暴露钝化膜; 以及去除所述钝化膜并在第一硅层上沉积第二硅层和所述沟槽隔离; 并且在沉积第一硅层的步骤中，第一硅层是未掺杂的硅层，并且在沉积第二硅层的步骤中，第二硅层是掺杂硅层或随后具有引入杂质的未掺杂硅层，或 并且通过随后的热滞后热扩散到第一硅层中。
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公开(公告)号：US07846788B2
公开(公告)日：2010-12-07
申请号：US12643646
申请日：2009-12-21
IPC分类号： H01L21/8232
CPC分类号： H01L21/28273 , H01L21/76232 , H01L27/115 , H01L27/11521
摘要： A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer.
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公开(公告)号：US08039336B2
公开(公告)日：2011-10-18
申请号：US12915683
申请日：2010-10-29
IPC分类号： H01L21/8232
CPC分类号： H01L21/28273 , H01L21/76232 , H01L27/115 , H01L27/11521
摘要： A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer.
摘要翻译： 一种方法包括以下步骤：将绝缘膜引入沟槽以提供沟槽隔离; 平坦化沟槽隔离以暴露钝化膜; 以及去除所述钝化膜并在第一硅层上沉积第二硅层和所述沟槽隔离; 并且在沉积第一硅层的步骤中，第一硅层是未掺杂的硅层，并且在沉积第二硅层的步骤中，第二硅层是掺杂硅层或随后具有引入杂质的未掺杂硅层，或 并且通过随后的热滞后热扩散到第一硅层中。
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公开(公告)号：US20100099234A1
公开(公告)日：2010-04-22
申请号：US12643646
申请日：2009-12-21
IPC分类号： H01L21/762
CPC分类号： H01L21/28273 , H01L21/76232 , H01L27/115 , H01L27/11521
摘要： A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer.
摘要翻译： 一种方法包括以下步骤：将绝缘膜引入沟槽以提供沟槽隔离; 平坦化沟槽隔离以暴露钝化膜; 以及去除所述钝化膜并在第一硅层上沉积第二硅层和所述沟槽隔离; 并且在沉积第一硅层的步骤中，第一硅层是未掺杂的硅层，并且在沉积第二硅层的步骤中，第二硅层是掺杂硅层或随后具有引入杂质的未掺杂硅层，或 并且通过随后的热滞后热扩散到第一硅层中。
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公开(公告)号：US20080290453A1
公开(公告)日：2008-11-27
申请号：US12219402
申请日：2008-07-22
IPC分类号： H01L29/00
CPC分类号： H01L21/28273 , H01L21/76232 , H01L27/115 , H01L27/11521
摘要： A method includes the steps of: introducing insulation film into a trench to provide a trench isolation; planarizing the trench isolation to expose a passivation film; and removing the passivation film and depositing a second silicon layer on a first silicon layer and the trench isolation; and in the step of depositing the first silicon layer the first silicon layer is an undoped silicon layer and in the step of depositing the second silicon layer the second silicon layer is a doped silicon layer or an undoped silicon layer subsequently having an impurity introduced thereinto or the like and thermally diffused through subsequent thermal hysteresis into the first silicon layer.
摘要翻译： 一种方法包括以下步骤：将绝缘膜引入沟槽以提供沟槽隔离; 平坦化沟槽隔离以暴露钝化膜; 以及去除所述钝化膜并在第一硅层上沉积第二硅层和所述沟槽隔离; 并且在沉积第一硅层的步骤中，第一硅层是未掺杂的硅层，并且在沉积第二硅层的步骤中，第二硅层是掺杂硅层或随后具有引入杂质的未掺杂硅层，或 并且通过随后的热滞后热扩散到第一硅层中。
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