摘要:
A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.
摘要:
A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.
摘要:
A beam dose computing method includes dividing a surface area of a target object into include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions to create a map of base doses of the beam in respective of said second regions and to prepare a map of proximity effect correction coefficients in respective of said second regions, using the maps to determine second corrected doses of the beam for proximity effect correction in the third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.
摘要:
A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.
摘要:
A beam dose computing method includes specifying a matrix of rows and columns of regions as divided from a surface area of a target object to include first, second and third regions of different sizes, the third regions being less in size than the first and second regions, determining first corrected doses of a charged particle beam for correcting fogging effects in the first regions, determining corrected size values for correcting pattern line width deviations occurring due to loading effects in the second regions, using said corrected size values in said second regions to create a map of base doses of the beam in respective ones of said second regions, using said corrected size values to prepare a map of proximity effect correction coefficients in respective ones of said second regions, using the maps to determine second corrected doses of said beam for correction of proximity effects in said third regions, and using the first and second corrected doses to determine an actual beam dose at each position on the surface of said object.
摘要:
A charged particle beam writing apparatus includes a first part configured, based on pattern data, to estimate a total writing time, a second part configured to acquire a base dose at an arbitrary time, after writing start time and within the total writing time by using a first correlation among a time having passed since the writing start time, the total writing time, and the base dose, a third part configured to acquire a fogging effect correction coefficient at the arbitrary time by using a second correlation among the time, the total writing time and the coefficient, a forth part configured to calculate a beam dose at the arbitrary time by using the base dose and the coefficient, a fifth part configured to calculate a beam irradiation time based on the beam dose, a deflector for deflecting the beam, and an aperture for blocking the beam.
摘要:
A pattern inspection apparatus includes a light source configured to emit a pulsed light, a stage on which an inspection target workpiece is placed, a sensor, including a plurality of light receiving elements two-dimensionally arrayed, configured to capture a pattern image in a two-dimensional region of the inspection target workpiece which is irradiated with the pulsed light, by using the plurality of light receiving elements, and a comparing unit configured to compare data of the pattern image with predetermined reference pattern image data, wherein the stage moves to be shifted by a number of pixels, being the number of natural number times one pixel, between pulses of the pulsed light.
摘要:
A charged particle beam writing method includes inputting pattern data for writing a writing region, predicting a writing time for writing the pattern of the pattern data, acquiring, by using a correlation among a time required from a writing start time, the predicted writing time and a base dose of a charged particle beam, a base dose of the charged particle beam after an optional time from a writing start in the case in which the pattern are written, acquiring, by using a correlation among the time required from the writing start time, the predicted writing time and a proximity effect correction coefficient, a proximity effect correction coefficient after an optional time from the writing start in the case in which the pattern are written, calculating, by using the base dose and the proximity effect correction coefficient after the optional time, an exposure dose of the charged particle beam after an optional time from a writing start in the writing time, and writing an optional position in the writing region by using the charged particle beam corresponding to the dose.
摘要:
A charged particle beam writing method includes inputting pattern data for writing a writing region, predicting a writing time for writing the pattern of the pattern data, acquiring, by using a correlation among a time required from a writing start time, the predicted writing time and a base dose of a charged particle beam, a base dose of the charged particle beam after an optional time from a writing start in the case in which the pattern are written, acquiring, by using a correlation among the time required from the writing start time, the predicted writing time and a proximity effect correction coefficient, a proximity effect correction coefficient after an optional time from the writing start in the case in which the pattern are written, calculating, by using the base dose and the proximity effect correction coefficient after the optional time, an exposure dose of the charged particle beam after an optional time from a writing start in the writing time, and writing an optional position in the writing region by using the charged particle beam corresponding to the dose.
摘要:
A charged particle beam writing apparatus includes a first part configured, based on pattern data, to estimate a total writing time, a second part configured to acquire a base dose at an arbitrary time, after writing start time and within the total writing time by using a first correlation among a time having passed since the writing start time, the total writing time, and the base dose, a third part configured to acquire a fogging effect correction coefficient at the arbitrary time by using a second correlation among the time, the total writing time and the coefficient, a forth part configured to calculate a beam dose at the arbitrary time by using the base dose and the coefficient, a fifth part configured to calculate a beam irradiation time based on the beam dose, a deflector for deflecting the beam, and an aperture for blocking the beam.