摘要:
Four stochastic resonators 20-1 to 20-4 outputting a pulse signal in accordance with a stochastic resonance phenomenon are unidirectionally coupled in a ring-like form to constitute a fluctuation oscillator 10. When a signal output from each of the stochastic resonators 20-1 to 20-4 is successively transmitted in the stochastic resonators 20-1 to 20-4 coupled in a ring-like form, the output timings at each stochastic resonator 20 are synchronized with each other due to a cooperation phenomenon between the stochastic resonators 20-1 to 20-4, so that each stochastic resonator 20 is self-excited to oscillate at a constant period of time.
摘要:
Four stochastic resonators 20-1 to 20-4 outputting a pulse signal in accordance with a stochastic resonance phenomenon are unidirectionally coupled in a ring-like form to constitute a fluctuation oscillator 10. When a signal output from each of the stochastic resonators 20-1 to 20-4 is successively transmitted in the stochastic resonators 20-1 to 20-4 coupled in a ring-like form, the output timings at each stochastic resonator 20 are synchronized with each other due to a cooperation phenomenon between the stochastic resonators 20-1 to 20-4, so that each stochastic resonator 20 is self-excited to oscillate at a constant period of time.
摘要:
The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba—Mn oxide showing ferromagnetism at 0° C. or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer are bonded to each other. Thus, it is possible to control the magnetism, the electricity transport property, and/or the magnetic resistivity effect at 0° C. or higher.
摘要:
The field-effect transistor includes: a ferromagnetic layer, having a film thickness of 50 nm or less, which is made of a Ba—Mn oxide showing ferromagnetism at 0° C. or higher; a dielectric layer made of a dielectric material or a ferroelectric material, and the ferromagnetic layer and the dielectric layer are bonded to each other. Thus, it is possible to control the magnetism, the electricity transport property, and/or the magnetic resistivity effect at 0° C. or higher.