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公开(公告)号:US20070102285A1
公开(公告)日:2007-05-10
申请号:US11643771
申请日:2006-12-22
申请人: Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
发明人: Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号: C25B15/00
摘要: The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.
摘要翻译: 基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于 根据CV或CVS工艺测量电镀液的剥离区域。
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公开(公告)号:US07172683B2
公开(公告)日:2007-02-06
申请号:US10627684
申请日:2003-07-28
申请人: Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
发明人: Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
摘要: The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.
摘要翻译: 基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于 根据CV或CVS工艺测量电镀液的剥离区域。
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3.
公开(公告)号:US06627066B1
公开(公告)日:2003-09-30
申请号:US09830407
申请日:2001-04-27
申请人: Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
发明人: Yasushi Isayama , Hiroyuki Ueyama , Hiroyuki Kaneko , Junitsu Yamakawa , Akihisa Hongo , Ryoichi Kimizuka , Megumi Maruyama
IPC分类号: G01N2742
摘要: The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.
摘要翻译: 基于在半导体衬底等的表面中限定的互连沟槽和孔中的用于填充铜等金属的电镀装置所使用的电镀液中的矫顽剂的浓度基于 根据CV或CVS工艺测量电镀液的剥离区域。
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