CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTORESIST COMPOSITION FOR THICK FILM, CHEMICALLY AMPLIFIED DRY FILM FOR THICK FILM, AND METHOD FOR PRODUCTION OF THICK FILM RESIST PATTERN
    1.
    发明申请
    CHEMICALLY AMPLIFIED POSITIVE-TYPE PHOTORESIST COMPOSITION FOR THICK FILM, CHEMICALLY AMPLIFIED DRY FILM FOR THICK FILM, AND METHOD FOR PRODUCTION OF THICK FILM RESIST PATTERN 有权
    用于厚膜的化学放大的正极型光电组合物,用于厚膜的化学放大干燥膜,以及用于生产厚膜电阻图案的方法

    公开(公告)号:US20100047715A1

    公开(公告)日:2010-02-25

    申请号:US12515872

    申请日:2007-10-18

    IPC分类号: G03F7/004 G03F7/20

    摘要: Disclosed are a chemically amplified positive-type photoresist composition for a thick film, a chemically amplified dry film for a thick film, and a method for producing a thick film resist pattern, all of which are capable of obtaining a satisfactory resist pattern with high sensitivity even on a substrate having a portion formed of copper on an upper surface thereof. The chemically amplified positive-type photoresist composition for a thick film comprises component (A) which includes at least one compound capable of producing an acid upon irradiation with an actinic ray or radiation, and component (B) which includes at least one resin whose alkali solubility increases by the action of an acid, in which the component (A) includes an onium fluorinated alkyl fluorophosphate having a specific structure.

    摘要翻译: 公开了一种用于厚膜的化学放大正型光致抗蚀剂组合物,用于厚膜的化学放大干膜,以及制造厚膜抗蚀剂图案的方法,所有这些都能够以高灵敏度获得令人满意的抗蚀剂图案 即使在其上表面上具有由铜形成的部分的基板上。 用于厚膜的化学放大正型光致抗蚀剂组合物包含组分(A),其包含至少一种能够在用光化学射线或辐射照射时能够产生酸的化合物,和组分(B),其包含至少一种其碱 通过酸的作用,溶解度增加,其中组分(A)包括具有特定结构的鎓氟化烷基氟磷酸酯。

    Chemically amplified positive-type photoresist composition for thick film, chemically amplified dry film for thick film, and method for production of thick film resist pattern
    2.
    发明授权
    Chemically amplified positive-type photoresist composition for thick film, chemically amplified dry film for thick film, and method for production of thick film resist pattern 有权
    用于厚膜的化学放大正型光致抗蚀剂组合物,用于厚膜的化学放大干膜,以及用于生产厚膜抗蚀剂图案的方法

    公开(公告)号:US08507180B2

    公开(公告)日:2013-08-13

    申请号:US12515872

    申请日:2007-10-18

    IPC分类号: G03F7/039

    摘要: Disclosed are a chemically amplified positive-type photoresist composition for a thick film, a chemically amplified dry film for a thick film, and a method for producing a thick film resist pattern, all of which are capable of obtaining a satisfactory resist pattern with high sensitivity even on a substrate having a portion formed of copper on an upper surface thereof. The chemically amplified positive-type photoresist composition for a thick film comprises component (A) which includes at least one compound capable of producing an acid upon irradiation with an actinic ray or radiation, and component (B) which includes at least one resin whose alkali solubility increases by the action of an acid, in which the component (A) includes an onium fluorinated alkyl fluorophosphate having a specific structure.

    摘要翻译: 公开了一种用于厚膜的化学放大正型光致抗蚀剂组合物,用于厚膜的化学放大干膜,以及制造厚膜抗蚀剂图案的方法,所有这些都能够以高灵敏度获得令人满意的抗蚀剂图案 即使在其上表面上具有由铜形成的部分的基板上。 用于厚膜的化学放大正型光致抗蚀剂组合物包含组分(A),其包含至少一种能够在用光化学射线或辐射照射时能够产生酸的化合物,和组分(B),其包含至少一种其碱 通过酸的作用,溶解度增加,其中组分(A)包括具有特定结构的鎓氟化烷基氟磷酸酯。