公开(公告)号：US09577125B2

公开(公告)日：2017-02-21

申请号：US14258696

申请日：2014-04-22

Applicant: Yeda Research and Development Co. Ltd.

Inventor： Dan Oron ,  Zvi Deutsch ,  Lior Neeman

IPC: H01L31/06 ,  H01L31/0352 ,  C09K11/88 ,  H01L31/0232 ,  H01L31/055 ,  C09K11/54

CPC classification number: H01L31/035218 ,  C09K11/54 ,  C09K11/88 ,  H01L31/02322 ,  H01L31/055 ,  Y02E10/52

Abstract: The present invention is based on a unique design of a novel structure, which incorporates two quantum dots of a different bandgap separated by a tunneling barrier. Upconversion is expected to occur by the sequential absorption of two photons. In broad terms, the first photon excites an electron-hole pair via intraband absorption in the lower bandgap dot, leaving a confined hole and a relatively delocalized electron. The second absorbed photon can lead, either directly or indirectly, to further excitation of the hole, enabling it to then cross the barrier layer. This, in turn, is followed by radiative recombination with the delocalized electron.

Abstract translation: 本发明基于新颖结构的独特设计，其结合了由隧道屏障分隔的不同带隙的两个量子点。 上转换预期通过顺序吸收两个光子而发生。 在广义上，第一个光子通过下带隙点中的内部吸收激发电子 - 空穴对，留下受限的孔和相对离域的电子。 第二个吸收的光子可以直接或间接导致孔的进一步激发，使其能够穿过阻挡层。 这又是随着与离域电子的辐射复合。