公开(公告)号：US20140093688A1

公开(公告)日：2014-04-03

申请号：US13631593

申请日：2012-09-28

申请人： Yindar CHUO ,  Clinton LANDROCK ,  Badr OMRANE ,  Bozena Kaminska

发明人： Yindar CHUO ,  Clinton LANDROCK ,  Badr OMRANE ,  Bozena Kaminska

IPC分类号： B44C1/22 ,  B32B3/30

CPC分类号： H01L21/3086 ,  B82Y40/00 ,  H01L21/0331 ,  Y10T428/24479

摘要： Methods of fabricating nano-structures on a substrate surface are provided including the use of small initial pilot nano-structures patterned in a writing layer which are enlarged upon transfer to a pattern transfer layer among process layers applied to the substrate material, before removal of the writing layer to reveal the enlarged nano-structures. Enlarged nano-structures are transferred to the substrate by etch techniques to produce desired final enlarged nano-structures in the substrate surface. Raised out of plane and etched-in-plane nano-structures may be produced. Multiple geometries, configurations and spacings of 2D (such as in-plane nano-structures) and/or 3D (such as out of plane nano-structures) nano-structures and/or grids or arrays thereof may be fabricated on a surface of a substrate according to a single fabrication process.

摘要翻译： 提供了在衬底表面上制造纳米结构的方法，包括使用在写入层中图案化的小的初始导频纳米结构，其在转移到施加到衬底材料的工艺层中的图案转移层之后被放大， 书写层，以揭示扩大的纳米结构。 通过蚀刻技术将放大的纳米结构转移到衬底，以在衬底表面中产生所需的最终放大的纳米结构。 可以产生平面外的平面和蚀刻的平面内纳米结构。 2D（例如平面内纳米结构）和/或3D（例如平面外纳米结构）的多个几何形状，配置和间隔可以在其表面上制造，其中纳米结构和/或网格或其阵列 基板根据单一制造工艺。

公开(公告)号：US20160056380A1

公开(公告)日：2016-02-25

申请号：US14845176

申请日：2015-09-03

申请人： Badr OMRANE ,  Clinton K. LANDROCK ,  Yindar CHUO ,  Bozena KAMINSKA

发明人： Badr OMRANE ,  Clinton K. LANDROCK ,  Yindar CHUO ,  Bozena KAMINSKA

IPC分类号： H01L51/00 ,  H01L51/50 ,  H01M10/0565 ,  H01L51/56 ,  H01G9/15 ,  H01M6/18 ,  H01L51/52 ,  H01L51/44

CPC分类号： H01L51/0021 ,  H01G4/005 ,  H01G4/008 ,  H01G4/14 ,  H01G4/18 ,  H01G9/15 ,  H01L51/441 ,  H01L51/5012 ,  H01L51/5056 ,  H01L51/5221 ,  H01L51/56 ,  H01L2251/301 ,  H01L2251/558 ,  H01M6/181 ,  H01M10/0565 ,  H01M2300/0082 ,  H01M2300/0091 ,  Y02E10/549 ,  Y02P70/521

摘要： An organic electronic device (e.g. OLED, OPV, OES, OTFT) is disclosed. The organic electronic device includes a carrier substrate, a first electrode layer disposed on the carrier substrate, an organic active electronic region disposed on the first electrode layer, and an indium second electrode layer disposed and formed on the organic active electronic region by applying heat on an indium solid at a temperature between the melting temperature of indium and a threshold operating temperature of the organic layers to melt the indium solid on the organic active electronic region. The organic active electronic region includes one or more organic layers. A method of manufacturing an organic electronic device is also disclosed.

摘要翻译： 公开了一种有机电子器件（例如OLED，OPV，OES，OTFT）。 有机电子器件包括载体基板，设置在载体基板上的第一电极层，设置在第一电极层上的有机有源电子区域和通过在有机有源电子区域上施加热量而设置并形成的铟第二电极层 铟铟固体在铟的熔融温度和有机层的阈值操作温度之间的温度下熔化铟固体在有机活性电子区域上。 有机活性电子区域包括一个或多个有机层。 还公开了一种制造有机电子器件的方法。

公开(公告)号：US20130153861A1

公开(公告)日：2013-06-20

申请号：US13329075

申请日：2011-12-16

申请人： Bozena KAMINSKA ,  Badr OMRANE ,  Clinton K. LANDROCK

发明人： Bozena KAMINSKA ,  Badr OMRANE ,  Clinton K. LANDROCK

IPC分类号： H01L51/50 ,  H01L31/18 ,  H01L51/40 ,  B82Y30/00

CPC分类号： H01L51/441 ,  B82Y20/00 ,  B82Y30/00 ,  H01L51/5206 ,  H01L51/5209 ,  Y02E10/549 ,  Y02P70/521

摘要： An organic optoelectronic device is disclosed. The organic optoelectronic device includes a carrier substrate, an anode electrode layer disposed at least partially on the carrier substrate, an organic electronic active region including one or more organic layers and disposed at least partially on the anode electrode layer, and a cathode electrode layer disposed at least partially on the organic photoactive layer. The anode electrode layer has a periodic array of sub-wavelength nanostructures. Methods of manufacturing an organic optoelectronic device are also disclosed.

摘要翻译： 公开了一种有机光电子器件。 有机光电子器件包括载体衬底，至少部分地设置在载体衬底上的阳极电极层，包括一个或多个有机层并且至少部分地设置在阳极电极层上的有机电子有源区，以及设置在阴极电极层 至少部分地在有机光敏层上。 阳极电极层具有亚波长纳米结构的周期性阵列。 还公开了制造有机光电子器件的方法。