利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

48 条记录 (耗时 0.031 秒)

    Spin transistor and manufacturing method thereof
    1.
    发明授权
    Spin transistor and manufacturing method thereof 失效
    自旋晶体管及其制造方法

    公开(公告)号：US07470551B2

    公开(公告)日：2008-12-30

    申请号：US11409212

    申请日：2006-04-24

    申请人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Lan-Chin Hsieh ,  Der-Ray Huang ,  Yeong-Der Yao ,  Jau-Jiu Ju

    发明人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Lan-Chin Hsieh ,  Der-Ray Huang ,  Yeong-Der Yao ,  Jau-Jiu Ju

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66984 ,  H01L29/6625

    摘要： A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.

    摘要翻译： 提供自旋晶体管及其制造方法。 该方法包括通过光刻在衬底上限定所需区域; 通过离子注入形成掺杂区域，并在衬底上形成磁阻膜。 最后，该方法在同一平面中产生具有发射极，基极和集电极的自旋晶体管。 制造方法将发射极，基极和集电极集成到一个平面中，从而实现了自旋晶体管的小型化，并且有利于集成和随后的自旋晶体管和集成电路元件的封装。

    Spin transistor and manufacturing method thereof
    3.
    发明申请
    Spin transistor and manufacturing method thereof 失效
    自旋晶体管及其制造方法

    公开(公告)号：US20070166841A1

    公开(公告)日：2007-07-19

    申请号：US11409212

    申请日：2006-04-24

    申请人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Lan-Chin Hsieh ,  Der-Ray Huang ,  Yeong-Der Yao ,  Jau-Jiu Ju

    发明人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Lan-Chin Hsieh ,  Der-Ray Huang ,  Yeong-Der Yao ,  Jau-Jiu Ju

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66984 ,  H01L29/6625

    摘要： A spin transistor and a manufacturing method thereof are provided. The method includes defining a required area on a substrate by lithography; forming a doping area by ion-implantation, and forming a magnetoresistive film on the substrate. Finally, the method produces a spin transistor with the emitter, the base, and the collector in the same plane surface. The manufacturing method integrates the emitter, the base, and the collector into one plane, so that miniaturization of the spin transistor is achieved, and it is advantageous for the integration and subsequent packaging of the spin transistor and integrated circuit elements.

    摘要翻译： 提供自旋晶体管及其制造方法。 该方法包括通过光刻在衬底上限定所需区域; 通过离子注入形成掺杂区域，并在衬底上形成磁阻膜。 最后，该方法在同一平面中产生具有发射极，基极和集电极的自旋晶体管。 制造方法将发射极，基极和集电极集成到一个平面中，从而实现了自旋晶体管的小型化，并且有利于集成和随后的自旋晶体管和集成电路元件的封装。

    Spin transistor and method thereof
    4.
    发明申请
    Spin transistor and method thereof 有权
    自旋晶体管及其方法

    公开(公告)号：US20060054930A1

    公开(公告)日：2006-03-16

    申请号：US10942113

    申请日：2004-09-16

    申请人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Lan-Chin Hsieh ,  Yeong-Der Yao ,  Der-Ray Huang ,  Jau-Jiu Ju

    发明人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Lan-Chin Hsieh ,  Yeong-Der Yao ,  Der-Ray Huang ,  Jau-Jiu Ju

    IPC分类号： H01L31/109

    CPC分类号： H01L29/66984 ,  B82Y10/00 ,  H01L43/08

    摘要： A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.

    摘要翻译： 自旋晶体管使用单个势垒结构来增加电流波动率。 自旋晶体管可以包括发射极，集电极，基极和基极电阻中的至少一个。 发射极可以是磁阻装置，其可以基于磁场提供可调电阻。 收集器可以是可以提供单个势垒的无源器件。 基极可以放置在发射极和集电极之间，并且可以将发射极与集电极耦合。 基极电阻可以连接到基极以提供偏置。

    Magneto-resistance transistor and method thereof
    5.
    发明申请
    Magneto-resistance transistor and method thereof 审中-公开

    公开(公告)号：US20080203504A1

    公开(公告)日：2008-08-28

    申请号：US12081270

    申请日：2008-04-14

    申请人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Yeong-Der Yao ,  Lan-Chin Hsieh ,  Jau-Jiu Ju ,  Der-Ray Huang

    发明人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Yeong-Der Yao ,  Lan-Chin Hsieh ,  Jau-Jiu Ju ,  Der-Ray Huang

    IPC分类号： H01L43/08

    CPC分类号： H01L43/08 ,  H01L29/82

    摘要： A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

    Magneto-resistance transistor and method thereof
    6.
    发明授权
    Magneto-resistance transistor and method thereof 失效
    磁阻晶体管及其方法

    公开(公告)号：US07372117B2

    公开(公告)日：2008-05-13

    申请号：US10942114

    申请日：2004-09-16

    申请人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Yeong-Der Yao ,  Lan-Chin Hsieh ,  Jau-Jiu Ju ,  Der-Ray Huang

    发明人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Yeong-Der Yao ,  Lan-Chin Hsieh ,  Jau-Jiu Ju ,  Der-Ray Huang

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： H01L43/08 ,  H01L29/82

    摘要： A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

    摘要翻译： 一种包括可用作发射极的磁阻元件和可用作集电极的无源元件的磁阻晶体管。 可以将基座置于无源元件和磁阻元件之间，从而将无源元件与磁阻元件相结合。 给定强度的磁场可以施加到磁阻晶体管的至少一部分，给定的强度决定了磁阻晶体管的至少一部分中的电阻。 因此，通过调整给定的磁场强度，可以调整电阻。 因此，可以用固定电压来实现不同的发射极电流输入。 此外，基极电流可以随发射极电流输入的受控变化而变化。

    Magneto-resistance transistor and method thereof
    7.
    发明申请
    Magneto-resistance transistor and method thereof 失效
    磁阻晶体管及其方法

    公开(公告)号：US20070063298A1

    公开(公告)日：2007-03-22

    申请号：US11600816

    申请日：2006-11-17

    申请人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Yeong-Der Yao ,  Lan-Chin Hsieh ,  Jau-Jiu Ju ,  Der-Ray Huang

    发明人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Yeong-Der Yao ,  Lan-Chin Hsieh ,  Jau-Jiu Ju ,  Der-Ray Huang

    IPC分类号： H01L43/00 ,  H01L29/82 ,  H01L27/082

    CPC分类号： H01L43/08 ,  H01L29/82

    摘要： A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

    摘要翻译： 一种包括可用作发射极的磁阻元件和可用作集电极的无源元件的磁阻晶体管。 可以将基座置于无源元件和磁阻元件之间，从而将无源元件与磁阻元件相结合。 给定强度的磁场可以施加到磁阻晶体管的至少一部分，给定的强度决定了磁阻晶体管的至少一部分中的电阻。 因此，通过调整给定的磁场强度，可以调整电阻。 因此，可以用固定电压来实现不同的发射极电流输入。 此外，基极电流可以随发射极电流输入的受控变化而变化。

    Magneto-resistance transistor and method thereof
    8.
    发明授权
    Magneto-resistance transistor and method thereof 失效
    磁阻晶体管及其方法

    公开(公告)号：US07531883B2

    公开(公告)日：2009-05-12

    申请号：US11600816

    申请日：2006-11-17

    申请人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Yeong-Der Yao ,  Lan-Chin Hsieh ,  Jau-Jiu Ju ,  Der-Ray Huang

    发明人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Yeong-Der Yao ,  Lan-Chin Hsieh ,  Jau-Jiu Ju ,  Der-Ray Huang

    IPC分类号： H01L29/78

    CPC分类号： H01L43/08 ,  H01L29/82

    摘要： A magneto-resistance transistor including a magneto-resistant element which may function as an emitter and a passive element which may function as a collector. The base may be interposed between the passive element and the magneto-resistant element, thereby coupling the passive element with the magneto-resistant element. A magnetic field of a given strength may be applied to at least a portion of the magneto-resistant transistor, the given strength determining a resistance in the at least a portion of the magneto-resistant transistor. Thus, by adjusting the given strength of the magnetic field, the resistance may be adjusted. Therefore, different emitter current inputs may be achieved with a fixed voltage. Further, a base current may vary with a controlled variation of the emitter current input.

    摘要翻译： 一种包括可用作发射极的磁阻元件和可用作集电极的无源元件的磁阻晶体管。 可以将基座置于无源元件和磁阻元件之间，从而将无源元件与磁阻元件相结合。 给定强度的磁场可以施加到磁阻晶体管的至少一部分，给定的强度决定了磁阻晶体管的至少一部分中的电阻。 因此，通过调整给定的磁场强度，可以调整电阻。 因此，可以用固定电压来实现不同的发射极电流输入。 此外，基极电流可以随发射极电流输入的受控变化而变化。

    Spin transistor and method thereof
    9.
    发明授权
    Spin transistor and method thereof 有权
    自旋晶体管及其方法

    公开(公告)号：US07235851B2

    公开(公告)日：2007-06-26

    申请号：US10942113

    申请日：2004-09-16

    申请人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Lan-Chin Hsieh ,  Yeong-Der Yao ,  Der-Ray Huang ,  Jau-Jiu Ju

    发明人： Ying-Wen Huang ,  Chi-Kuen Lo ,  Lan-Chin Hsieh ,  Yeong-Der Yao ,  Der-Ray Huang ,  Jau-Jiu Ju

    IPC分类号： H01L29/82 ,  H01L43/00

    CPC分类号： H01L29/66984 ,  B82Y10/00 ,  H01L43/08

    摘要： A spin transistor uses a single potential barrier structure to increase a current fluctuation rate. The spin transistor may include at least one of an emitter, a collector, a base and a base resistor. The emitter may be a magneto-resistant device, which may provide an adjustable resistance based on a magnetic field. The collector may be a passive device which may provide the single potential barrier. The base may placed between the emitter and the collector, and may couple the emitter with the collector. The base resistor may be connected to the base in order to provide a bias.

    摘要翻译： 自旋晶体管使用单势垒结构来增加电流波动率。 自旋晶体管可以包括发射极，集电极，基极和基极电阻中的至少一个。 发射极可以是磁阻装置，其可以基于磁场提供可调电阻。 收集器可以是可以提供单个势垒的无源器件。 基极可以放置在发射极和集电极之间，并且可以将发射极与集电极耦合。 基极电阻可以连接到基极以提供偏置。