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    Back-side illuminated image sensor
    1.
    发明申请
    Back-side illuminated image sensor 审中-公开
    背面照明图像传感器

    公开(公告)号：US20100140733A1

    公开(公告)日：2010-06-10

    申请号：US12591912

    申请日：2009-12-04

    申请人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    发明人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    IPC分类号： H01L31/02

    CPC分类号： H04N5/361 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

    摘要： In an example embodiment, the backside-illuminated image sensor includes a substrate including a plurality of photoelectric conversion devices being separated by a semiconductor. The backside-illuminated sensor further includes a transparent electrode layer or a metal layer formed on a surface of a substrate. As a positive bias voltage or a negative bias voltage is applied to the transparent electrode layer or the metal layer, generation of dark current in the surface of the silicon substrate may be reduced or suppressed.

    摘要翻译： 在示例性实施例中，背面照明图像传感器包括由半导体分隔开的多个光电转换装置的基板。 背侧照明传感器还包括形成在基板的表面上的透明电极层或金属层。 由于向透明电极层或金属层施加正偏置电压或负偏置电压，因此可以减少或抑制硅衬底的表面中的暗电流的产生。

    Image sensor and image sensing system including the same
    4.
    发明授权
    Image sensor and image sensing system including the same 有权
    图像传感器和图像传感系统包括相同的

    公开(公告)号：US08487351B2

    公开(公告)日：2013-07-16

    申请号：US12591632

    申请日：2009-11-25

    申请人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    发明人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

    摘要： The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

    摘要翻译： 提供了图像传感器和包括其的图像感测系统。 图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。 图像传感器包括至少一个阻热器或隔热罩。 可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。 热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。 使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

    image sensor and image sensing system including the same
    5.
    发明申请
    image sensor and image sensing system including the same 有权
    图像传感器和包括其的图像感测系统

    公开(公告)号：US20100133635A1

    公开(公告)日：2010-06-03

    申请号：US12591632

    申请日：2009-11-25

    申请人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    发明人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    IPC分类号： H01L31/024 ,  H01L27/146

    CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

    摘要： The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

    摘要翻译： 提供了图像传感器和包括其的图像感测系统。 图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。 图像传感器包括至少一个阻热器或隔热罩。 可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。 热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。 使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

    Image sensors
    6.
    发明申请
    Image sensors 审中-公开
    图像传感器

    公开(公告)号：US20100134668A1

    公开(公告)日：2010-06-03

    申请号：US12591721

    申请日：2009-11-30

    申请人： Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

    发明人： Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

    IPC分类号： H04N5/335 ,  H01L31/0352

    CPC分类号： H01L27/1463 ,  H01L27/14629 ,  H01L27/1464

    摘要： An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.

    摘要翻译： 图像传感器包括用于将多个光电二极管彼此隔离的多个阱。 每个阱包括配置成接收正偏置电压的P型阱区和N型阱区。 图像传感器通过抑制起霜效果和暗电流来提供更清晰的图像。

    Image sensor and image sensing system including the same
    7.
    发明申请
    Image sensor and image sensing system including the same 有权
    图像传感器和图像传感系统包括相同的

    公开(公告)号：US20100045836A1

    公开(公告)日：2010-02-25

    申请号：US12461608

    申请日：2009-08-18

    申请人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    发明人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    IPC分类号： H04N5/335 ,  H01L27/146

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14641

    摘要： An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

    摘要翻译： 图像传感器包括在半导体衬底中的导电阱，在导电阱下方的半导体衬底中的光敏器件（PSD），PSD和导电阱彼此重叠的光敏器件（PSD）以及半导体衬底中的电荷传输单元 所述电荷传输单元具有凹入栅极的结构并且位于所述半导体衬底的凹部区域中。

    CMOS image sensor for increasing conversion gain
    9.
    发明授权
    CMOS image sensor for increasing conversion gain 有权
    CMOS图像传感器，用于增加转换增益

    公开(公告)号：US09257462B2

    公开(公告)日：2016-02-09

    申请号：US13530334

    申请日：2012-06-22

    申请人： Young Hwan Park ,  Jung Chak Ahn ,  Sang Joo Lee ,  Jong Eun Park ,  Young Heub Jang

    发明人： Young Hwan Park ,  Jung Chak Ahn ,  Sang Joo Lee ,  Jong Eun Park ,  Young Heub Jang

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14603 ,  H01L27/14641

    摘要： In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.

    摘要翻译： 在一个实施例中，图像传感器包括被配置为将光信号转换为光电荷的第一光电二极管，被配置为存储第一光电二极管的光电荷的感测节点，以及被配置为选择性地输出对应于光电荷的电信号的电路 感测节点在输出线上。 电路连接到至少第一导电接点，输出线设置在感测节点和第一导电接点之间。

    CMOS IMAGE SENSOR
    10.
    发明申请
    CMOS IMAGE SENSOR 有权
    CMOS图像传感器

    公开(公告)号：US20130015324A1

    公开(公告)日：2013-01-17

    申请号：US13530334

    申请日：2012-06-22

    申请人： Young Hwan Park ,  Jung Chak Ahn ,  Sang Joo Lee ,  Jong Eun Park ,  Young Heub Jang

    发明人： Young Hwan Park ,  Jung Chak Ahn ,  Sang Joo Lee ,  Jong Eun Park ,  Young Heub Jang

    IPC分类号： H01L27/146 ,  H01L27/148

    CPC分类号： H01L27/14603 ,  H01L27/14641

    摘要： In one embodiment, the image sensor includes a first photodiode configured to convert an optical signal into a photocharge, a sensing node configured to store the photocharge of the first photodiode, and a circuit configured to selectively output an electrical signal corresponding to the photocharge at the sensing node on an output line. The circuit is connected to at least a first conductive contact, and the output line is disposed between the sensing node and the first conductive contact.

    摘要翻译： 在一个实施例中，图像传感器包括被配置为将光信号转换为光电荷的第一光电二极管，被配置为存储第一光电二极管的光电荷的感测节点，以及被配置为选择性地输出对应于光电荷的电信号的电路 感测节点在输出线上。 电路连接到至少第一导电接点，输出线设置在感测节点和第一导电接点之间。