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    Image sensor and image sensing system including the same
    1.
    发明授权
    Image sensor and image sensing system including the same 有权
    图像传感器和图像传感系统包括相同的

    公开(公告)号：US08487351B2

    公开(公告)日：2013-07-16

    申请号：US12591632

    申请日：2009-11-25

    申请人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    发明人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    IPC分类号： H01L27/148

    CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

    摘要： The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

    摘要翻译： 提供了图像传感器和包括其的图像感测系统。 图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。 图像传感器包括至少一个阻热器或隔热罩。 可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。 热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。 使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

    image sensor and image sensing system including the same
    2.
    发明申请
    image sensor and image sensing system including the same 有权
    图像传感器和包括其的图像感测系统

    公开(公告)号：US20100133635A1

    公开(公告)日：2010-06-03

    申请号：US12591632

    申请日：2009-11-25

    申请人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    发明人： Kyung Ho Lee ,  Dong-Yoon Jang ,  Jung Chak Ahn ,  Moo Sup Lim ,  Yong Jei Lee ,  Jong Eun Park

    IPC分类号： H01L31/024 ,  H01L27/146

    CPC分类号： H01L27/14623 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14643

    摘要： The image sensor and an image sensing system including the same are provided. The image sensor includes a semiconductor substrate, a pixel array formed at a pixel area located in the semiconductor substrate and comprising a plurality of photoelectric converts, a plurality of driver circuits formed at a circuit area defined in the semiconductor substrate. The image sensor includes at least one heat blocker or heat shield. The at least one heat blocker may be formed between the pixel area and the circuit area in the semiconductor substrate. The heat blocker or heat shield may block or dissipate heat generated at the circuit area from being transferred to the pixel area through the semiconductor substrate. The heat blocker or heat shield may be used in image sensors using a back-side illumination sensor (BIS) structure or image sensors using a silicon on insulator (SOI) semiconductor substrate.

    摘要翻译： 提供了图像传感器和包括其的图像感测系统。 图像传感器包括半导体衬底，形成在位于半导体衬底中的像素区域并包括多个光电转换器的像素阵列，形成在半导体衬底中限定的电路区域的多个驱动电路。 图像传感器包括至少一个阻热器或隔热罩。 可以在像素区域和半导体衬底中的电路区域之间形成至少一个热阻挡器。 热阻挡器或隔热罩可以阻挡或消散在电路区域产生的热量，以通过半导体衬底传送到像素区域。 使用背面照明传感器（BIS）结构的图像传感器或使用绝缘体上硅（SOI）半导体衬底的图像传感器）可以使用热阻挡器或隔热罩。

    Back-side illuminated image sensor
    3.
    发明申请
    Back-side illuminated image sensor 审中-公开
    背面照明图像传感器

    公开(公告)号：US20100140733A1

    公开(公告)日：2010-06-10

    申请号：US12591912

    申请日：2009-12-04

    申请人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    发明人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    IPC分类号： H01L31/02

    CPC分类号： H04N5/361 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643

    摘要： In an example embodiment, the backside-illuminated image sensor includes a substrate including a plurality of photoelectric conversion devices being separated by a semiconductor. The backside-illuminated sensor further includes a transparent electrode layer or a metal layer formed on a surface of a substrate. As a positive bias voltage or a negative bias voltage is applied to the transparent electrode layer or the metal layer, generation of dark current in the surface of the silicon substrate may be reduced or suppressed.

    摘要翻译： 在示例性实施例中，背面照明图像传感器包括由半导体分隔开的多个光电转换装置的基板。 背侧照明传感器还包括形成在基板的表面上的透明电极层或金属层。 由于向透明电极层或金属层施加正偏置电压或负偏置电压，因此可以减少或抑制硅衬底的表面中的暗电流的产生。

    CMOS image sensor and driving method of the same
    6.
    发明申请
    CMOS image sensor and driving method of the same 审中-公开
    CMOS图像传感器及其驱动方法相同

    公开(公告)号：US20090294816A1

    公开(公告)日：2009-12-03

    申请号：US12453532

    申请日：2009-05-14

    申请人： Jong-Eun Park ,  Jung-Chak Ahn ,  Yong-Jei Lee ,  Dong-Yoon Jang

    发明人： Jong-Eun Park ,  Jung-Chak Ahn ,  Yong-Jei Lee ,  Dong-Yoon Jang

    IPC分类号： H01L31/112

    CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14641

    摘要： Provided are a CMOS image sensor and a driving method thereof. The CMOS image sensor may include a photodetector disposed in a semiconductor substrate to accumulate photocharges, a charge transfer element configured to control transfer of the photocharges accumulated in the photodetector, a detecting element configured to detect the photocharges transferred by the charge transfer element, and a well driving contact configured to increase a potential difference between the photodetector and the detecting element while the photocharges are transferred.

    摘要翻译： 提供一种CMOS图像传感器及其驱动方法。 CMOS图像传感器可以包括设置在半导体衬底中以累积光电荷的光电检测器，被配置为控制在光电检测器中累积的光电荷的转移的电荷转移元件，被配置为检测由电荷转移元件传送的光电荷的检测元件，以及 良好的驱动接点被配置为在光电荷转移时增加光电检测器和检测元件之间的电位差。

    Image sensors
    7.
    发明申请
    Image sensors 审中-公开
    图像传感器

    公开(公告)号：US20100134668A1

    公开(公告)日：2010-06-03

    申请号：US12591721

    申请日：2009-11-30

    申请人： Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

    发明人： Jong Eun Park ,  Yong Jei Lee ,  Jung Chak Ahn ,  Dong-Yoon Jang

    IPC分类号： H04N5/335 ,  H01L31/0352

    CPC分类号： H01L27/1463 ,  H01L27/14629 ,  H01L27/1464

    摘要： An image sensor includes a plurality of wells for isolating a plurality of photodiodes from each other. Each of the wells includes a P-type well region and an N-type well region configured to receive a positive bias voltage. The image sensor provides a clearer image by suppressing a blooming effect and a dark current.

    摘要翻译： 图像传感器包括用于将多个光电二极管彼此隔离的多个阱。 每个阱包括配置成接收正偏置电压的P型阱区和N型阱区。 图像传感器通过抑制起霜效果和暗电流来提供更清晰的图像。

    Image sensor and image sensing system including the same
    8.
    发明申请
    Image sensor and image sensing system including the same 有权
    图像传感器和图像传感系统包括相同的

    公开(公告)号：US20100045836A1

    公开(公告)日：2010-02-25

    申请号：US12461608

    申请日：2009-08-18

    申请人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    发明人： Yong Jei Lee ,  Jung Chak Ahn ,  Jong Eun Park ,  Dong-Yoon Jang

    IPC分类号： H04N5/335 ,  H01L27/146

    CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14641

    摘要： An image sensor includes a conductive well in a semiconductor substrate, a photo sensitive device (PSD) in the semiconductor substrate below the conductive well, the PSD and conductive well overlapping each other, and a charge transmission unit in the semiconductor substrate and adjacent to the conductive well, the charge transmission unit having a structure of a recessed gate and being positioned in a recess region of the semiconductor substrate.

    摘要翻译： 图像传感器包括在半导体衬底中的导电阱，在导电阱下方的半导体衬底中的光敏器件（PSD），PSD和导电阱彼此重叠的光敏器件（PSD）以及半导体衬底中的电荷传输单元 所述电荷传输单元具有凹入栅极的结构并且位于所述半导体衬底的凹部区域中。

    Image sensors
    10.
    发明授权
    Image sensors 有权
    图像传感器

    公开(公告)号：US08537255B2

    公开(公告)日：2013-09-17

    申请号：US12801740

    申请日：2010-06-23

    申请人： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

    发明人： Kyung-Ho Lee ,  Jung-Chak Ahn ,  Dong-Yoon Jang ,  Wook Lee ,  Tae-Sub Jung

    IPC分类号： H04N3/14 ,  H04N9/083 ,  H04N5/335 ,  H04N9/04

    CPC分类号： H04N9/045 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687

    摘要： Image sensors including a semiconductor substrate, a plurality of photo detecting elements, a dielectric layer, a plurality of color filters, and a plurality of micro lenses. The photo detecting elements may be in the semiconductor substrate and may convert an incident light into an electric signal. The dielectric layer may be on the semiconductor substrate and may include a plurality of photo blocking regions on regions between the photo detecting elements. The color filters may be on the dielectric layer and may be disposed corresponding to the plurality of photo detecting elements, respectively. The micro lenses may be on the plurality of color filters and may be disposed corresponding to the plurality of photo detecting elements, respectively.

    摘要翻译： 图像传感器包括半导体衬底，多个光电检测元件，电介质层，多个滤色器和多个微透镜。 光检测元件可以在半导体衬底中，并且可以将入射光转换成电信号。 电介质层可以在半导体衬底上并且可以包括在光检测元件之间的区域上的多个光阻挡区域。 滤色器可以在电介质层上，并且可以分别对应于多个光检测元件设置。 微透镜可以在多个滤色器上，并且可以分别对应于多个光检测元件设置。