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公开(公告)号:US20140262024A1
公开(公告)日:2014-09-18
申请号:US13844149
申请日:2013-03-15
申请人: Yong-Jhin CHO , YONGSUN KO , KYOUNGSEOB KIM , KWANGSU KIM , SeokHoon KIM , Jung-Min OH , KUNTACK LEE , WONHO JANG , YONGMYUNG JUN
发明人: Yong-Jhin CHO , YONGSUN KO , KYOUNGSEOB KIM , KWANGSU KIM , SeokHoon KIM , Jung-Min OH , KUNTACK LEE , WONHO JANG , YONGMYUNG JUN
IPC分类号: H01L21/67
CPC分类号: H01L21/67017 , H01L21/67051 , H01L21/6708
摘要: Substrate treatment systems are provided. The substrate treatment systems may include a treating device configured to treat a substrate with a supercritical fluid, and a supplying device configured to supply the supercritical fluid to the treating device. The treating device may include a supercritical process zone in which the substrate is treated with the supercritical fluid, and a pre-supercritical process zone in which the supercritical fluid is expanded and then provided into the supercritical process zone to create a supercritical state in the supercritical process zone.
摘要翻译: 提供底物处理系统。 衬底处理系统可以包括被配置为用超临界流体处理衬底的处理装置和被配置为将超临界流体供应到处理装置的供给装置。 处理装置可以包括其中用超临界流体处理衬底的超临界过程区,以及超临界过程区,其中超临界流体被膨胀,然后被提供到超临界过程区以在超临界流体中产生超临界状态 过程区。