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公开(公告)号：US20090302805A1
公开(公告)日：2009-12-10
申请号：US12478065
申请日：2009-06-04
IPC分类号： H02J7/10
CPC分类号： H02J7/0052 , G01R19/16519 , H03K17/0822
摘要： Disclosed is a charge-controlling semiconductor integrated circuit including: a current-controlling MOS transistor; a current detection circuit including a 1/N size current-detecting MOS transistor; and a gate voltage control circuit, wherein the current detection circuit includes an operational amplifier circuit, a bias condition of the current-detecting MOS transistor becomes same as the current-controlling MOS transistor based on an operational amplifier circuit output, voltage drops in lines from drain electrode to a corresponding input point of the operational amplifier circuit become the same by a parasitic resistance, and when the output of the operational amplifier circuit is applied to a control terminal of the bias condition controlling transistor, the drain voltages become the same potential, and the line from the drain electrode of the current-detecting MOS transistor to the input point is formed to be redundantly arranged inside the chip so that a parasitic resistance becomes a predetermined value.
摘要翻译： 公开了一种电荷控制半导体集成电路，包括：电流控制MOS晶体管; 电流检测电路，包括1 / N尺寸电流检测MOS晶体管; 以及栅极电压控制电路，其中电流检测电路包括运算放大器电路，电流检测用MOS晶体管的偏置状态与基于运算放大器电路输出的电流控制用MOS晶体管相同， 漏电极到运算放大器电路的对应输入点变成相同的寄生电阻，并且当运算放大器电路的输出被施加到偏置条件控制晶体管的控制端时，漏极电压变为相同的电位， 形成从电流检测用MOS晶体管的漏极到输入点的线被冗余配置在芯片的内部，使寄生电阻成为规定值。
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2.发明授权公开(公告)号：US08558516B2
公开(公告)日：2013-10-15
申请号：US12467466
申请日：2009-05-18
IPC分类号： H02J7/06
CPC分类号： H02J7/00
摘要： A charge-controlling semiconductor integrated circuit includes a current- controlling MOS transistor which is connected between a voltage input terminal and an output terminal and controls flowing current, a substratum voltage switching circuit connected between the voltage input/output terminal and a substratum to which an input/output voltage is applied, and a voltage comparison circuit to compare the input/output voltage. The charge-controlling semiconductor integrated circuit controls the substratum voltage switching circuit based on an output of the voltage comparison circuit, and the voltage comparison circuit includes an intentional offset in a first potential direction. A level shift circuit to shift the output voltage to a potential direction opposite to the first potential direction is provided in a preceding stage of a first input terminal of the voltage comparison circuit, and the input voltage is input to a second input terminal of the voltage comparison circuit.
摘要翻译： 电荷控制半导体集成电路包括电流控制MOS晶体管，其连接在电压输入端子和输出端子之间并控制流动电流;基极电压开关电路，连接在电压输入/输出端子与基板之间， 施加输入/输出电压，以及比较输入/输出电压的电压比较电路。 电荷控制半导体集成电路基于电压比较电路的输出控制基极电压开关电路，电压比较电路包括在第一电位方向上的有意偏移。 在电压比较电路的第一输入端子的前级设置有将输出电压移位到与第一电位方向相反的电位方向的电平移位电路，输入电压输入到电压的第二输入端子 比较电路。
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3.发明申请公开(公告)号：US20090289605A1
公开(公告)日：2009-11-26
申请号：US12467466
申请日：2009-05-18
IPC分类号： H02J7/06
CPC分类号： H02J7/00
摘要： Disclosed a charge-controlling semiconductor integrated circuit comprising: a current-controlling MOS transistor connected between a voltage input terminal and an output terminal and controls flowing current; a substratum voltage switching circuit connected between the voltage input/output terminal and a substratum to which an input/output voltage is applied; and a voltage comparison circuit to compare the input/output voltage, wherein the charge-controlling semiconductor integrated circuit controls the substratum voltage switching circuit based on an output of the voltage comparison circuit, the voltage comparison circuit includes an intentional offset in a first potential direction, and in a preceding stage of a first input terminal of the voltage comparison circuit, a level shift circuit to shift the output voltage to an opposite potential direction is provided, and to a second input terminal of the voltage comparison circuit, the input voltage is input.
摘要翻译： 公开了一种电荷控制半导体集成电路，包括：电流控制MOS晶体管，连接在电压输入端子和输出端子之间，并控制流动电流; 连接在电压输入/输出端子和施加了输入/输出电压的基板之间的基极电压开关电路; 以及用于比较输入/输出电压的电压比较电路，其中所述充电控制半导体集成电路基于所述电压比较电路的输出来控制所述基极电压开关电路，所述电压比较电路包括在第一电位方向上的有意偏移 ，并且在电压比较电路的第一输入端子的前级中，提供将输出电压移位到相反电位方向的电平移位电路，并且对于电压比较电路的第二输入端子，输入电压为 输入。
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公开(公告)号：US08035355B2
公开(公告)日：2011-10-11
申请号：US12478065
申请日：2009-06-04
CPC分类号： H02J7/0052 , G01R19/16519 , H03K17/0822
摘要： Disclosed is a charge-controlling semiconductor integrated circuit including: a current-controlling MOS transistor; a current detection circuit including a 1/N size current-detecting MOS transistor; and a gate voltage control circuit, wherein the current detection circuit includes an operational amplifier circuit, a bias condition of the current-detecting MOS transistor becomes same as the current-controlling MOS transistor based on an operational amplifier circuit output, voltage drops in lines from drain electrode to a corresponding input point of the operational amplifier circuit become the same by a parasitic resistance, and when the output of the operational amplifier circuit is applied to a control terminal of the bias condition controlling transistor, the drain voltages become the same potential, and the line from the drain electrode of the current-detecting MOS transistor to the input point is formed to be redundantly arranged inside the chip so that a parasitic resistance becomes a predetermined value.
摘要翻译： 公开了一种电荷控制半导体集成电路，包括：电流控制MOS晶体管; 电流检测电路，包括1 / N尺寸电流检测MOS晶体管; 以及栅极电压控制电路，其中电流检测电路包括运算放大器电路，电流检测用MOS晶体管的偏置状态与基于运算放大器电路输出的电流控制用MOS晶体管相同， 漏电极到运算放大器电路的对应输入点变成相同的寄生电阻，并且当运算放大器电路的输出被施加到偏置条件控制晶体管的控制端时，漏极电压变为相同的电位， 形成从电流检测用MOS晶体管的漏极到输入点的线被冗余配置在芯片的内部，使寄生电阻成为规定值。
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公开(公告)号：US09197084B2
公开(公告)日：2015-11-24
申请号：US13748174
申请日：2013-01-23
IPC分类号： H02J7/00
摘要： A charge controller includes a charge control circuit that, when detecting that a charging power supply is connected, controls the charging transistor to apply the charge current; a first and second control switch element connected in series between one terminal of a secondary battery and an external terminal; and a protection circuit that, when the secondary battery is over-discharged, turns off the first control switch element to stop discharge current and when deeply discharged, turns off the second control switch element. The protection circuit sends a charge inhibit signal to the charge control circuit when the secondary battery is deeply discharged, and while receiving the charge inhibit signal, the charge control circuit keeps the charging transistor off to prevent the charge current from flowing even if detecting that the charging power supply is connected.
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公开(公告)号：US20130207597A1
公开(公告)日：2013-08-15
申请号：US13756627
申请日：2013-02-01
IPC分类号： H02J7/00
CPC分类号： H02J7/0052 , H02J7/0029 , H02J7/007 , H02J7/0073 , H02J2007/0039 , H05B37/0281
摘要： A charge circuit includes a current limiting circuit configured to limit a current input from an input terminal; a first transistor connected between an output terminal of the current limiting circuit and a secondary battery; a charge control circuit configured to turn the first transistor on and off to start and stop supply of a charge current to the secondary battery; a second transistor configured to output a current proportional to the charge current flowing through the first transistor; and a charge timer configured to generate clock pulses according to the current output from the second transistor. The charge control circuit is configured to turn off the first transistor to stop the supply of the charge current to the secondary battery when the number of the clock pulses reaches a predetermined number.
摘要翻译： 充电电路包括限流电路，其限制来自输入端的电流输入; 连接在限流电路的输出端子和二次电池之间的第一晶体管; 充电控制电路，被配置为使所述第一晶体管接通和断开，以开始和停止向所述二次电池供应充电电流; 第二晶体管，被配置为输出与流过所述第一晶体管的所述充电电流成比例的电流; 以及充电定时器，被配置为根据来自第二晶体管的电流输出产生时钟脉冲。 充电控制电路被配置为当时钟脉冲的数量达到预定数量时，关闭第一晶体管以停止向二次电池的充电电流的供应。
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公开(公告)号：US09225182B2
公开(公告)日：2015-12-29
申请号：US13748174
申请日：2013-01-23
IPC分类号： H02J7/00
CPC分类号： H02J7/0031 , H02J7/0042 , H02J2007/004
摘要： A charge controller includes a charge control circuit that, when detecting that a charging power supply is connected, controls the charging transistor to apply the charge current; a first and second control switch element connected in series between one terminal of a secondary battery and an external terminal; and a protection circuit that, when the secondary battery is over-discharged, turns off the first control switch element to stop discharge current and when deeply discharged, turns off the second control switch element. The protection circuit sends a charge inhibit signal to the charge control circuit when the secondary battery is deeply discharged, and while receiving the charge inhibit signal, the charge control circuit keeps the charging transistor off to prevent the charge current from flowing even if detecting that the charging power supply is connected.
摘要翻译： 充电控制器包括充电控制电路，当检测到充电电源被连接时，控制充电晶体管以施加充电电流; 串联连接在二次电池的一个端子和外部端子之间的第一和第二控制开关元件; 以及保护电路，当二次电池过放电时，关闭第一控制开关元件以停止放电电流，并且当深度放电时，关闭第二控制开关元件。 当二次电池被深度放电时，保护电路向充电控制电路发送禁止充电信号，并且在接收到充电禁止信号的同时，充电控制电路保持充电晶体管截止，以防止充电电流流动，即使检测到 充电电源连接。
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公开(公告)号：US09166432B2
公开(公告)日：2015-10-20
申请号：US13756627
申请日：2013-02-01
CPC分类号： H02J7/0052 , H02J7/0029 , H02J7/007 , H02J7/0073 , H02J2007/0039 , H05B37/0281
摘要： A charge circuit includes a current limiting circuit configured to limit a current input from an input terminal; a first transistor connected between an output terminal of the current limiting circuit and a secondary battery; a charge control circuit configured to turn the first transistor on and off to start and stop supply of a charge current to the secondary battery; a second transistor configured to output a current proportional to the charge current flowing through the first transistor; and a charge timer configured to generate clock pulses according to the current output from the second transistor. The charge control circuit is configured to turn off the first transistor to stop the supply of the charge current to the secondary battery when the number of the clock pulses reaches a predetermined number.
摘要翻译： 充电电路包括限流电路，其限制来自输入端的电流输入; 连接在限流电路的输出端子和二次电池之间的第一晶体管; 充电控制电路，被配置为使所述第一晶体管接通和断开，以开始和停止向所述二次电池供应充电电流; 第二晶体管，被配置为输出与流过所述第一晶体管的所述充电电流成比例的电流; 以及充电定时器，被配置为根据来自第二晶体管的电流输出产生时钟脉冲。 充电控制电路被配置为当时钟脉冲的数量达到预定数量时，关闭第一晶体管以停止向二次电池的充电电流的供应。
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公开(公告)号：US10965145B2
公开(公告)日：2021-03-30
申请号：US16213026
申请日：2018-12-07
申请人： Daisuke Suzuki , Takafumi Goto , Kensuke Kuroda
发明人： Daisuke Suzuki , Takafumi Goto , Kensuke Kuroda
摘要： A charge control device for controlling charging of a secondary battery by using a current limit function of an external power supply includes: a charge control element arranged to be connected in series between the external power supply and the secondary battery; a constant current control unit configured to control an output current of the charge control element to be constant; a constant voltage control unit configured to control an output voltage of the charge control element to be constant; and an ON state setting unit configured to set the charge control element to an ON state, wherein the charge control element includes a control terminal to which a control signal for controlling the output current and the output voltage is input, and is composed of a single output element.
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10.发明授权公开(公告)号：US09391772B2
公开(公告)日：2016-07-12
申请号：US14115251
申请日：2011-06-02
申请人： Daisuke Suzuki
发明人： Daisuke Suzuki
CPC分类号： H04L9/0866 , G06F12/14 , G06F21/50 , G06F21/70 , G06F2221/21 , G11B20/00086 , H04L9/3278
摘要： In initial generation (for example, shipping from the factory), a security device generates an identifier w specific to the security device, with the PUF technology, generates key information k (k=HF(k)) from the identifier w, generates encrypted confidential information x by encrypting (x=Enc(mk, k)) confidential information mk with the key information k, and stores the encrypted confidential information x and an authentication code h (h=HF′(k)) of the key information k, in a nonvolatile memory. In operation, the security device generates the identifier w with the PUF technology, generates the key information k from the identifier w, and decrypts the encrypted confidential information x with the key information k. At a timing where the identifier w is generated in the operation, the security device checks whether the current operating environment has largely changed from the initial generation (S311). If a change in operating environment is detected (S311→S312), the security device conducts a reset-up process (S312 to S315) of an authentication code h which is confidential information, and the encrypted confidential information x.
摘要翻译： 在初始阶段（例如，出厂时），安全设备生成特定于安全设备的标识符w，利用PUF技术，从标识符w生成密钥信息k（k = HF（k）），生成加密 机密信息x通过用密钥信息k加密（x = Enc（mk，k））机密信息mk，并且将加密的机密信息x和密钥信息k的认证码h（h = HF'（k））存储 ，在非易失性存储器中。 在操作中，安全设备利用PUF技术生成标识符w，从标识符w生成密钥信息k，并用密钥信息k对加密的机密信息进行解密。 在操作中生成标识符w的定时，安全装置检查当前的操作环境是否从初始生成发生了很大的变化（S311）。 如果检测到操作环境发生变化（S311→S312），则安全装置进行作为机密信息的认证码h的复位处理（S312〜S315）和加密的机密信息x。
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