公开(公告)号：US5243215A

公开(公告)日：1993-09-07

申请号：US704052

申请日：1991-05-22

申请人： Yoshinari Enomoto ,  Yoshio Tsuruta

发明人： Yoshinari Enomoto ,  Yoshio Tsuruta

IPC分类号： H01L27/144 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/0288 ,  H01L27/1443 ,  H01L27/14689 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y10S438/901

摘要： The present invention discloses a light-receiving element, and method for making same, for a charge storage light sensor having a first semiconductor layer of a first conductive type with an element isolation region disposed thereon. The element isolation regions are formed to produce tilted edges embedded within the first semiconductor layer and to also produce an embedded region of a second conductive type. The embedded region is effective to collect the photoelectric current resulting from light exposure to the first semiconductor layer regions upon the application of a reverse bias potential to the embedded region.

摘要翻译： 本发明公开了一种具有第一导电类型的第一半导体层的电荷存储光传感器的光接收元件及其制造方法，其中元件隔离区域设置在其上。 形成元件隔离区域以产生嵌入第一半导体层内的倾斜边缘并且还产生第二导电类型的嵌入区域。 当对嵌入区域施加反向偏置电位时，嵌入区域有效地收集由于对第一半导体层区域的曝光而产生的光电流。

公开(公告)号：US5338691A

公开(公告)日：1994-08-16

申请号：US65567

申请日：1993-05-21

申请人： Yoshinari Enomoto ,  Yoshio Tsuruta

发明人： Yoshinari Enomoto ,  Yoshio Tsuruta

IPC分类号： H01L27/144 ,  H01L31/0288 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/0288 ,  H01L27/1443 ,  H01L27/14689 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y10S438/901

摘要： The present invention discloses a light-receiving element, and method for making same, for a charge storage light sensor having a first semiconductor later of a first conductive type with an element isolation region disposed thereon. The element isolation regions are formed to produce tilted edges embedded within the first semiconductor layer and to also produce an embedded region of a second conductive type. The embedded region is effective to collect the photoelectric current resulting from light exposure to the first semiconductor layer regions upon the application of a reverse bias potential to the embedded region.

摘要翻译： 本发明公开了一种用于具有第一半导体的电荷存储光传感器的光接收元件及其制造方法，所述第一半导体具有设置在其上的元件隔离区域的第一导电类型。 形成元件隔离区域以产生嵌入第一半导体层内的倾斜边缘并且还产生第二导电类型的嵌入区域。 当对嵌入区域施加反向偏置电位时，嵌入区域有效地收集由于对第一半导体层区域的曝光而产生的光电流。

公开(公告)号：US06417503B1

公开(公告)日：2002-07-09

申请号：US09260088

申请日：1999-03-02

申请人： Yoshio Tsuruta

发明人： Yoshio Tsuruta

IPC分类号： H01J4014

CPC分类号： H03M1/129 ,  H03G3/3084

摘要： An optical sensor circuit of the invention includes a photodiode, a reset switch, a capacitor for charge integration, an operational amplifier, reference voltage generating circuits connected to the operational amplifier via switches, and a reference voltage selecting circuit connected to the control input terminals of the respective switches. The reference voltage for defining the upper limit of the output range of the optical sensor circuit can be set at an appropriate value. Since the reference voltage is set at an appropriate value corresponding to the input range of an A/D converter due to this circuit configuration, a conversion error in the A/D converter is avoided, and the analog output of the optical sensor circuit is converted to a digital quantity while the resolution of the A/D converter is fully utilized.

摘要翻译： 本发明的光传感器电路包括光电二极管，复位开关，用于电荷积分的电容器，运算放大器，通过开关连接到运算放大器的参考电压发生电路，以及连接到控制输入端的参考电压选择电路 各自的开关。 用于限定光学传感器电路的输出范围的上限的参考电压可以被设置为适当的值。 由于由于该电路结构而将参考电压设置在对应于A / D转换器的输入范围的适当值，所以避免了A / D转换器的转换误差，并且光传感器电路的模拟输出被转换 达到数字量，而A / D转换器的分辨率得到充分利用。

公开(公告)号：US5233180A

公开(公告)日：1993-08-03

申请号：US889712

申请日：1992-05-28

申请人： Yoshio Tsuruta ,  Shotaro Yokoyama ,  Takashi Nishibe

发明人： Yoshio Tsuruta ,  Shotaro Yokoyama ,  Takashi Nishibe

IPC分类号： H03K17/693 ,  H03K17/785

CPC分类号： H03K17/693 ,  H03K17/785

摘要： A light sensor device which uses semiconductors, can assure linearity even with low light intensity, and has a fast response time provides a voltage output proportional to a photoelectric current obtained from the output of an operational amplifier by accumulating the photoelectric current from a photodiode using the operational amplifier and an integration capacitance connected in parallel to the operational amplifier.

摘要翻译： 使用半导体的光传感器装置即使在低光强度下也可以保证线性，并且具有快速的响应时间，通过使用光电二极管累积来自光电二极管的光电流，提供与从运算放大器的输出获得的光电流成比例的电压输出 运算放大器和与运算放大器并联连接的积分电容。

公开(公告)号：US5448056A

公开(公告)日：1995-09-05

申请号：US192692

申请日：1994-02-07

申请人： Yoshio Tsuruta

发明人： Yoshio Tsuruta

IPC分类号： G01J1/44 ,  G01J1/46 ,  H03F3/08

CPC分类号： H03F3/087 ,  G01J1/46

摘要： A photoelectric converting circuit having a photodiode generating a photoelectric current in accordance with the quantity of light, a first integrating circuit integrating the photoelectric current to convert it into a voltage, and a charge amplifier amplifying the change in the output voltage of the first integrating circuit. The charge amplifier is composed of a second integrating circuit and a coupling capacitance connected between the output of the first integrating circuit and the input of the second integrating circuit. The change in the output of the second integrating circuit is proportional to the ratio of the coupling capacitance to the integration capacitance of the second integrating circuit. This makes it possible to improve the sensitivity of the photoelectric converting circuit without reducing the value of the integration capacitance of the first integrating circuit.

摘要翻译： 一种光电转换电路，其具有根据光量产生光电流的光电二极管，将光电流积分成一电压的第一积分电路和放大第一积分电路的输出电压变化的电荷放大器 。 电荷放大器由第二积分电路和连接在第一积分电路的输出端和第二积分电路的输入端之间的耦合电容构成。 第二积分电路的输出的变化与第二积分电路的耦合电容与积分电容的比例成比例。 这使得可以在不降低第一积分电路的积分电容的值的情况下提高光电转换电路的灵敏度。