公开(公告)号：US07961442B2

公开(公告)日：2011-06-14

申请号：US11947315

申请日：2007-11-29

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/39

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.

摘要翻译： 隧道磁检测元件包括具有包括Ti-O子层和Ta-O子层的层状结构的绝缘阻挡层。 绝缘阻挡层中的Ta浓度相对于构成绝缘阻挡层的Ti和Ta的总和为100at％，设定为大于0at％但不大于约7at％。

公开(公告)号：US07916436B2

公开(公告)日：2011-03-29

申请号：US11890086

申请日：2007-08-03

申请人： Masahiko Ishizone ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Kazumasa Nishimura

发明人： Masahiko Ishizone ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Kazumasa Nishimura

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3295 ,  H01F41/303 ,  H01L43/08

摘要： A tunneling magnetic sensor includes a platinum layer between a pinned magnetic layer and an insulating barrier layer. The platinum layer can probably vary the barrier height (potential height) and barrier width (potential width) of the insulating barrier layer to reduce the absolute value of VCR, thus providing higher operating stability than known tunneling magnetic sensors. In addition, the insulating barrier layer can achieve increased flatness at its bottom interface (where the insulating barrier layer starts to be formed). The tunneling magnetic sensor can therefore provide a higher rate of resistance change (ΔR/R) at low RA than known tunneling magnetic sensors.

摘要翻译： 隧道磁传感器包括在钉扎磁性层和绝缘阻挡层之间的铂层。 铂层可能改变绝缘阻挡层的势垒高度（势高）和势垒宽度（电位宽度），以降低VCR的绝对值，从而提供比已知的隧道磁传感器更高的操作稳定性。 此外，绝缘阻挡层可以在其底部界面（其中开始形成绝缘阻挡层）时实现增加的平坦度。 因此，隧道磁传感器可以在低RA处提供比已知的隧道磁传感器更高的电阻变化率（＆Dgr; R / R）。

公开(公告)号：US20080186639A1

公开(公告)日：2008-08-07

申请号：US12026985

申请日：2008-02-06

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/32 ,  H01L43/08

摘要： A tunneling magnetic sensing element includes a pinned magnetic layer with a magnetization direction that is pinned in one direction, an insulating barrier layer, and a free magnetic layer with a magnetization direction that varies in response to an external magnetic field. The insulating barrier layer comprises magnesium (Mg), and a first protective layer composed of Mg is disposed on the free magnetic layer.

摘要翻译： 隧道磁感应元件包括具有沿一个方向固定的磁化方向的钉扎磁性层，绝缘阻挡层和具有响应于外部磁场而变化的磁化方向的自由磁性层。 绝缘阻挡层包括镁（Mg），并且由自由磁性层上设置由Mg构成的第一保护层。

公开(公告)号：US20080182111A1

公开(公告)日：2008-07-31

申请号：US11947315

申请日：2007-11-29

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： H01F1/00 ,  H01F41/14

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/0005 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic detecting element includes an insulating barrier layer having a layered structure including a Ti—O sublayer and a Ta—O sublayer. The Ta concentration in the insulating barrier layer is set to be more than 0 at % but not more than about 7 at % with respect to a total of 100 at % of Ti and Ta constituting the insulating barrier layer.

摘要翻译： 隧道磁检测元件包括具有包括Ti-O子层和Ta-O子层的层状结构的绝缘阻挡层。 绝缘阻挡层中的Ta浓度相对于构成绝缘阻挡层的Ti和Ta的总和为100at％，设定为大于0at％但不大于约7at％。

公开(公告)号：US20080074804A1

公开(公告)日：2008-03-27

申请号：US11851570

申请日：2007-09-07

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone ,  Ryo Nakabayashi ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3163 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/16 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： A tunneling magnetic sensing element including an Mg—O insulating barrier which can maintain favorable soft-magnetic properties of a free magnetic layer and can have a high resistance change ratio (ΔR/R) compared to known tunnel magnetic sensing elements is disclosed, and a method of manufacturing such a tunneling magnetic sensing element is also discloded. An enhance layer (second magnetic layer) composed of Co100-XFeX having a Fe composition ratio X of about 30 to 100 at % is disposed on the Mg—O insulating barrier. With this, the magnetostriction λ of the free magnetic layer can be reduced and the resistance change ratio (ΔR/R) can be increased.

摘要翻译： 公开了一种隧道磁传感元件，其包括可以保持自由磁性层的有利的软磁性质并且可以具有与已知的隧道磁传感元件相比高的电阻变化率（DeltaR / R）的Mg-O绝缘屏障，并且 制造这种隧道磁传感元件的方法也被剥离。 由Fe组成比X为约30〜100原子％的由Co-100-X-Fe x X组成的增强层（第二磁性层）设置在Mg-O 绝缘屏障。 由此，可以减小自由磁性层的磁致伸缩λ，并且可以增加电阻变化率（DeltaR / R）。

公开(公告)号：US08023233B2

公开(公告)日：2011-09-20

申请号：US11945468

申请日：2007-11-27

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： G11B5/39

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/40 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.

摘要翻译： 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由配置在自由磁性层上的铱 - 锰（IrMn）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，电阻变化率高，自由磁层的磁致伸缩性低。

公开(公告)号：US07881024B2

公开(公告)日：2011-02-01

申请号：US11622918

申请日：2007-01-12

申请人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

发明人： Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Masahiko Ishizone ,  Takuya Seino ,  Kazumasa Nishimura ,  Ryo Nakabayashi

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/10

摘要： A tunnel-type magnetic detecting element is provided. The tunnel-type magnetic detecting element includes a first ferromagnetic layer; an insulating barrier layer; and a second ferromagnetic layer. The first ferromagnetic layer, the second ferromagnetic layer, or both have a Heusler alloy layer contacting the insulating barrier layer. Equivalent planes represented by {110} surfaces, are preferentially oriented parallel to a film surface in the Heusler alloy layer. The insulating barrier layer is formed of MgO and the equivalent crystal planes represented by the {100} surfaces or the equivalent crystal planes represented by the {110} surfaces are oriented parallel to the film surface.

摘要翻译： 提供隧道式磁检测元件。 隧道式磁检测元件包括第一铁磁层; 绝缘阻挡层; 和第二铁磁层。 第一铁磁层，第二铁磁层或两者具有接触绝缘阻挡层的Heusler合金层。 由{110}表面表示的等效平面优先取向平行于Heusler合金层中的膜表面。 绝缘阻挡层由MgO形成，由{100}表面表示的等效晶面或由{110}表面表示的等效晶面定向平行于膜表面。

公开(公告)号：US20080253038A1

公开(公告)日：2008-10-16

申请号：US11888762

申请日：2007-08-02

申请人： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa

发明人： Ryo Nakabayashi ,  Kazumasa Nishimura ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12

摘要： A tunneling magnetic sensor includes a pinned magnetic layer of which the magnetization is pinned in one direction, an insulating barrier layer, and a free magnetic layer of which the magnetization is varied by an external magnetic field, these layers being arranged in that order from the bottom. A first protective layer made of magnesium (Mg) is disposed on the free magnetic layer. The tunneling magnetic sensor has a larger change in reluctance as compared to conventional magnetic sensors including no first protective layers or including first protective layers made of Al, Ti, Cu, or an Ir—Mn alloy. The free magnetic layer has lower magnetostriction as compared to free magnetic layers included in the conventional magnetic sensors.

摘要翻译： 隧道磁传感器包括磁化被固定在一个方向上的钉扎磁性层，绝缘阻挡层和磁化强度由外部磁场变化的自由磁性层，这些层按照从 底部。 由镁（Mg）制成的第一保护层设置在自由磁性层上。 与不包括第一保护层或包括由Al，Ti，Cu或Ir-Mn合金制成的第一保护层的常规磁传感器相比，隧道磁传感器具有较大的磁阻变化。 与常规磁传感器中包括的自由磁性层相比，自由磁层具有较低的磁致伸缩性。

公开(公告)号：US20080160326A1

公开(公告)日：2008-07-03

申请号：US11946569

申请日：2007-11-28

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： H01F1/00 ,  H01F41/14

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/40 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of platinum (Pt) disposed on the free magnetic layer. Consequently, it is possible to greatly decrease the magnetostriction of the free magnetic layer while maintaining a high rate of change in resistance compared with a tunneling magnetic sensing element which is not provided with a first protective layer.

摘要翻译： 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由设置在自由磁性层上的铂（Pt）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，可以大大降低自由磁性层的磁致伸缩，同时保持高的电阻变化率。

公开(公告)号：US20080160325A1

公开(公告)日：2008-07-03

申请号：US11945468

申请日：2007-11-27

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Naoya Hasegawa ,  Masamichi Saito ,  Yosuke Ide ,  Masahiko Ishizone

IPC分类号： H01F1/00 ,  H01F41/14

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/40 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/32 ,  H01L43/08 ,  H01L43/12 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a pinned magnetic layer whose magnetization direction is pinned in one direction, an insulating barrier layer disposed on the pinned magnetic layer, a free magnetic layer whose magnetization direction varies in response to an external magnetic field disposed on the insulating barrier layer, and a first protective layer composed of iridium-manganese (IrMn) disposed on the free magnetic layer. Consequently, a high rate of change in resistance is obtained and the magnetostriction of the free magnetic layer is low, compared with a tunneling magnetic sensing element which is not provided with a first protective layer.

摘要翻译： 隧道磁传感元件包括磁化方向被钉在一个方向上的钉扎磁性层，设置在被钉扎的磁性层上的绝缘阻挡层，磁化方向随设置在绝缘屏障上的外部磁场而变化的自由磁性层 以及由配置在自由磁性层上的铱 - 锰（IrMn）构成的第一保护层。 因此，与没有设置第一保护层的隧道式磁感应元件相比，电阻变化率高，自由磁层的磁致伸缩性低。