公开(公告)号：US08432010B2

公开(公告)日：2013-04-30

申请号：US12769799

申请日：2010-04-29

申请人： Youichi Otsuka ,  Kazuaki Ogawa ,  Taichi Natori ,  Atsushi Yamamoto ,  Yasunori Koshino ,  Hitomi Kamiya ,  Yoshinori Toumiya ,  Tadayuki Dofuku ,  Ina Hori ,  Takayuki Shoya ,  Yukihiro Sayama ,  Masaya Shimoji ,  Yoshikazu Tanaka

发明人： Youichi Otsuka ,  Kazuaki Ogawa ,  Taichi Natori ,  Atsushi Yamamoto ,  Yasunori Koshino ,  Hitomi Kamiya ,  Yoshinori Toumiya ,  Tadayuki Dofuku ,  Ina Hori ,  Takayuki Shoya ,  Yukihiro Sayama ,  Masaya Shimoji ,  Yoshikazu Tanaka

IPC分类号： H01L31/14

CPC分类号： H04N5/335 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/14685

摘要： Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.

公开(公告)号：US20100289100A1

公开(公告)日：2010-11-18

申请号：US12769799

申请日：2010-04-29

申请人： Youichi Otsuka ,  Kazuaki Ogawa ,  Taichi Natori ,  Atsushi Yamamoto ,  Yasunori Koshino ,  Hitomi Kamiya ,  Yoshinori Toumiya ,  Tadayuki Dofuku ,  Ina Hori ,  Takayuki Shoya ,  Yukihiro Sayama ,  Masaya Shimoji ,  Yoshikazu Tanaka

发明人： Youichi Otsuka ,  Kazuaki Ogawa ,  Taichi Natori ,  Atsushi Yamamoto ,  Yasunori Koshino ,  Hitomi Kamiya ,  Yoshinori Toumiya ,  Tadayuki Dofuku ,  Ina Hori ,  Takayuki Shoya ,  Yukihiro Sayama ,  Masaya Shimoji ,  Yoshikazu Tanaka

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H04N5/335 ,  H01L27/1462 ,  H01L27/14632 ,  H01L27/14685

摘要： Disclosed herein is a solid-state image pickup device including a solid-state image pickup element operable to produce an electric charge according to the amount of light received, a lens disposed on the upper side of a pixel of the solid-state image pickup element, a protective film which covers the upper side of the lens and a surface of which is flattened, and a surface film which is formed at the surface of the protective film and which is higher in hydrophilicity than the inside of the protective film.

摘要翻译： 本文公开了一种固态图像拾取装置，其包括可根据所接收的光量产生电荷的固态图像拾取元件，设置在固态图像拾取元件的像素的上侧的透镜 覆盖透镜的上侧并且其表面变平的保护膜，以及形成在保护膜的表面并且亲水性高于保护膜内侧的表面膜。

公开(公告)号：US08603852B2

公开(公告)日：2013-12-10

申请号：US12792355

申请日：2010-06-02

申请人： Yoshinori Toumiya ,  Ina Hori ,  Tadayuki Dofuku ,  Hitomi Kamiya ,  Atsushi Yamamoto ,  Taichi Natori

发明人： Yoshinori Toumiya ,  Ina Hori ,  Tadayuki Dofuku ,  Hitomi Kamiya ,  Atsushi Yamamoto ,  Taichi Natori

IPC分类号： H01L21/302

CPC分类号： H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/148

摘要： Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.

摘要翻译： 本文公开了一种制造固态成像装置的方法，包括以下步骤：在半导体衬底的光接收区域中形成光接收部分; 在所述半导体衬底的焊盘区域中形成焊盘部分; 在所述光接收部分和所述焊盘部分上形成微透镜材料层; 向所述微透镜材料层提供对应于所述光接收部分的微透镜; 在微透镜材料层上形成低反射材料层; 在所述焊盘部分上蚀刻所述微透镜材料层和所述低反射材料层以形成开口; 并通过常温氧自由基处理赋予低反射材料层的表面和开口的内部亲水性。

公开(公告)号：US20100320554A1

公开(公告)日：2010-12-23

申请号：US12792355

申请日：2010-06-02

申请人： Yoshinori Toumiya ,  Ina Hori ,  Tadayuki Dofuku ,  Hitomi Kamiya ,  Atsushi Yamamoto ,  Taichi Natori

发明人： Yoshinori Toumiya ,  Ina Hori ,  Tadayuki Dofuku ,  Hitomi Kamiya ,  Atsushi Yamamoto ,  Taichi Natori

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/148

摘要： Disclosed herein is a method of manufacturing a solid state imaging device, including the steps of: forming a light receiving portion in a light receiving area of a semiconductor substrate; forming a pad portion in a pad area of the semiconductor substrate; forming a microlens material layer over the light receiving portion and the pad portion; providing the microlens material layer with a microlens corresponding to the light receiving portion; forming a low-reflection material layer on the microlens material layer; etching the microlens material layer and the low-reflection material layer over the pad portion to form an opening; and imparting hydrophilicity to a surface of the low-reflection material layer and an inside portion of the opening by a normal temperature oxygen radical treatment.

摘要翻译： 本文公开了一种制造固态成像装置的方法，包括以下步骤：在半导体衬底的光接收区域中形成光接收部分; 在所述半导体衬底的焊盘区域中形成焊盘部分; 在所述光接收部分和所述焊盘部分上形成微透镜材料层; 向所述微透镜材料层提供对应于所述光接收部分的微透镜; 在微透镜材料层上形成低反射材料层; 在所述焊盘部分上蚀刻所述微透镜材料层和所述低反射材料层以形成开口; 并通过常温氧自由基处理赋予低反射材料层的表面和开口的内部亲水性。