公开(公告)号：US4990319A

公开(公告)日：1991-02-05

申请号：US322205

申请日：1989-03-13

申请人： Youji Takenouchi ,  Katsuhiko Nishiguchi ,  Kunio Abe

发明人： Youji Takenouchi ,  Katsuhiko Nishiguchi ,  Kunio Abe

IPC分类号： C01B17/50 ,  C01B17/96 ,  C01C1/02

CPC分类号： C01C1/028 ,  C01B17/504

摘要： A process for producing NH.sub.3 and SO.sub.2 from ammonium sulfate, which comprises(i) reacting ammonium sulfate with a metal oxide or hydroxide at a temperature of not more than 200.degree. C. to form NH.sub.3, water and a metal sulfate and recovering NH.sub.3,(ii) decomposing the metal sulfate in the presence of a reducing agent to form a metal oxide and SO.sub.2 and recovering SO.sub.2, and(iii) recycling the metal oxide to step (i) as such or after it is converted to a metal hydroxide.

公开(公告)号：US06887725B2

公开(公告)日：2005-05-03

申请号：US10667517

申请日：2003-09-23

申请人： Shunri Oda ,  Xinwei Zhao ,  Katsuhiko Nishiguchi

发明人： Shunri Oda ,  Xinwei Zhao ,  Katsuhiko Nishiguchi

IPC分类号： H01J1/312 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01L21/203 ,  H01L21/205 ,  H01L29/66 ,  H01L29/80 ,  H01L21/00 ,  H01J1/30

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/027

摘要： A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum. Such a quantum size effect micro particle (3) comprises a micro particle of a single crystal semiconductor in a nanometer order having electron energy levels made so discrete that no phonon scattering is brought about, and on its surface area an insulator so thin that an electron is capable of tunneling therethrough.

摘要翻译： 公开了能够利用量子尺寸效应从半导体中提取电子并且可以针对每个像素单独安装的微电子枪，以及使用这样的量子效率高的电子枪的图像显示装置， 高亮度和薄，以及其制造方法。 来自n型半导体衬底（2）的传导电子在电场下通过形成在n型半导体衬底（2）的表面上的量子尺寸效应微粒（3）的层（4）加速并通过 从而使其在到达电极（5）时可能具有不小于电极（5）的功函数的能量，并因此允许弹出到真空中。 这样的量子尺寸效应微粒（3）包括纳米级的单晶半导体微粒子，其具有使得离散的电子能级不能产生声子散射，并且在其表面积上具有如此薄的绝缘体 能穿过隧道。

公开(公告)号：US06661021B2

公开(公告)日：2003-12-09

申请号：US10275959

申请日：2002-11-18

申请人： Shunri Oda ,  Xinwei Zhao ,  Katsuhiko Nishiguchi

发明人： Shunri Oda ,  Xinwei Zhao ,  Katsuhiko Nishiguchi

IPC分类号： H01L2906

CPC分类号： B82Y10/00 ,  H01J1/312 ,  H01J9/027

摘要： A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum. Such a quantum size effect micro particle (3) comprises a micro particle of a single crystal semiconductor in a nanometer order having electron energy levels made so discrete that no phonon scattering is brought about, and on its surface area an insulator so thin that an electron is capable of tunneling therethrough.

摘要翻译： 公开了能够利用量子尺寸效应从半导体中提取电子并且可以针对每个像素单独安装的微电子枪，以及使用这样的量子效率高的电子枪的图像显示装置， 高亮度和薄，以及其制造方法。 来自n型半导体衬底（2）的传导电子在电场下通过形成在n型半导体衬底（2）的表面上的量子尺寸效应微粒（3）的层（4）加速并通过 从而使其在到达电极（5）时可能具有不小于电极（5）的功函数的能量，并因此允许弹出到真空中。 这样的量子尺寸效应微粒（3）包括纳米级的单晶半导体微粒子，其具有使得离散的电子能级不能产生声子散射，并且在其表面积上具有如此薄的绝缘体 能穿过隧道。