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    NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    1.
    发明申请
    NITRIDE BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    基于氮化物的半导体器件及其制造方法

    公开(公告)号：US20130146983A1

    公开(公告)日：2013-06-13

    申请号：US13406123

    申请日：2012-02-27

    申请人： Young Hwan PARK ,  Woo Chul JEON ,  Ki Yeol PARK ,  Seok Yoon HONG

    发明人： Young Hwan PARK ,  Woo Chul JEON ,  Ki Yeol PARK ,  Seok Yoon HONG

    IPC分类号： H01L27/088 ,  H01L21/336

    CPC分类号： H01L29/66462 ,  H01L29/2003 ,  H01L29/7787

    摘要： Disclosed herein is a nitride based semiconductor device, including: a substrate; a nitride based semiconductor layer having a lower nitride based semiconductor layer and an upper nitride based semiconductor layer on the substrate; an isolation area including an interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer; and drain electrodes, source electrode, and gate electrodes formed on the upper nitride based semiconductor layer.According to preferred embodiments of the present invention, in the nitride based semiconductor device, by using the isolation area including the interface between the lower nitride based semiconductor layer and the upper nitride based semiconductor layer, problems of parasitic capacitance and leakage current are solved, and as a result, a switching speed can be improved through a gate pad.

    摘要翻译： 本文公开了一种氮化物基半导体器件，包括：衬底; 在衬底上具有下氮化物基半导体层和上部氮化物基半导体层的氮化物基半导体层; 隔离区域，包括下部氮化物基半导体层和上部氮化物基半导体层之间的界面; 以及形成在上部氮化物基半导体层上的漏电极，源电极和栅电极。 根据本发明的优选实施例，在基于氮化物的半导体器件中，通过使用包括下部氮化物基半导体层和上部氮化物类半导体层之间的界面的隔离区域，解决寄生电容和漏电流的问题， 结果，可以通过栅极焊盘改善切换速度。

    NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    2.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US20130082277A1

    公开(公告)日：2013-04-04

    申请号：US13442494

    申请日：2012-04-09

    申请人： Young Hwan PARK ,  Woo Chul Jeon ,  Ki Yeol Park ,  Seok Yoon Hong

    发明人： Young Hwan PARK ,  Woo Chul Jeon ,  Ki Yeol Park ,  Seok Yoon Hong

    IPC分类号： H01L29/20 ,  H01L21/335

    CPC分类号： H01L29/41725 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787

    摘要： The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a plurality of p-type nitride semiconductor segments formed on the nitride semiconductor layer and each formed lengthways from a first sidewall thereof, which is spaced apart from the source electrode, to a drain side; and a gate electrode formed to be close to the source electrode and in contact with the nitride semiconductor layer between the plurality of p-type semiconductor segments and portions of the p-type semiconductor segments extending in the direction of a source-side sidewall of the gate electrode aligned with the first sidewalls of the p-type nitride semiconductor segments is provided.

    摘要翻译： 本发明涉及一种氮化物半导体器件及其制造方法。 根据本发明的一个方面，一种氮化物半导体器件包括：具有2DEG通道的氮化物半导体层; 与氮化物半导体层欧姆接触的源电极; 与氮化物半导体层欧姆接触的漏电极; 多个p型氮化物半导体段形成在氮化物半导体层上，并且每个从源极电极间隔开的第一侧壁纵向形成到漏极侧; 以及栅电极，其形成为靠近所述源电极并且与所述多个p型半导体区段之间的所述氮化物半导体层和所述p型半导体区段沿所述源极侧侧壁的方向延伸的部分接触 提供了与p型氮化物半导体段的第一侧壁对准的栅电极。

    NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    3.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 有权
    氮化物半导体器件及其制造方法

    公开(公告)号：US20130082276A1

    公开(公告)日：2013-04-04

    申请号：US13429148

    申请日：2012-03-23

    申请人： Young Hwan PARK ,  Woo Chul JEON ,  Ki Yeol PARK ,  Seok Yoon HONG

    发明人： Young Hwan PARK ,  Woo Chul JEON ,  Ki Yeol PARK ,  Seok Yoon HONG

    IPC分类号： H01L29/778 ,  H01L21/335

    CPC分类号： H01L29/42316 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

    摘要： The present invention relates to a nitride semiconductor device and a manufacturing method thereof. According to one aspect of the present invention, a nitride semiconductor device including: a nitride semiconductor layer having a 2DEG channel; a source electrode in ohmic contact with the nitride semiconductor layer; a drain electrode in ohmic contact with the nitride semiconductor layer; a p-type nitride layer formed on the nitride semiconductor layer between the source and drain electrodes; an n-type nitride layer formed on the p-type nitride layer; and a gate electrode formed between the source and drain electrodes to be close to the source electrode and in contact with the n-type nitride layer so that a source-side sidewall thereof is aligned with source-side sidewalls of the p-type and n-type nitride layers is provided. Further, a method of manufacturing a nitride semiconductor device is provided.

    摘要翻译： 本发明涉及一种氮化物半导体器件及其制造方法。 根据本发明的一个方面，一种氮化物半导体器件包括：具有2DEG通道的氮化物半导体层; 与氮化物半导体层欧姆接触的源电极; 与氮化物半导体层欧姆接触的漏电极; 形成在所述源极和漏极之间的所述氮化物半导体层上的p型氮化物层; 形成在p型氮化物层上的n型氮化物层; 以及形成在源电极和漏电极之间的栅电极，以接近源电极并与n型氮化物层接触，使得源侧侧壁与p型和n型源极侧的侧壁对准 型氮化物层。 此外，提供了一种制造氮化物半导体器件的方法。

    DISH WASHER
    7.
    发明申请
    DISH WASHER 审中-公开
    洗碗机

    公开(公告)号：US20100300499A1

    公开(公告)日：2010-12-02

    申请号：US12759115

    申请日：2010-04-13

    申请人： Jung Youp HAN ,  Young Hwan PARK ,  Min Kyung JUNG ,  Je Hoon KIM

    发明人： Jung Youp HAN ,  Young Hwan PARK ,  Min Kyung JUNG ,  Je Hoon KIM

    IPC分类号： A47L15/42

    CPC分类号： A47L15/483

    摘要： Dish washer is disclosed for efficient removal of humid air formed after drying dishes. The dish washer includes a cabinet which forms an exterior of the dish washer, a tub in the cabinet to form a washing chamber for washing dishes, a water jacket mounted to one sidewall of the tub to hold water supplied from an outside of the dish washer for condensing moisture in humid air formed after washing and drying of the dishes when the humid air is brought into contact thereto, and a condensing duct mounted to an inside or an outside of the water jacket for guiding the humid air to the water jacket in removing the moisture from the humid air.

    摘要翻译： 公开了洗碗机，用于有效地除去干燥盘子后形成的潮湿空气。 洗碗机包括形成洗碗机外部的橱柜，柜体中的桶，以形成用于洗涤菜肴的清洗室，安装在桶的一个侧壁上的水套，用于保持从洗碗机外部供应的水 用于在潮湿空气与其接触时，在洗涤和干燥餐具之后形成的潮湿空气中冷凝水分;以及冷凝管，其安装在水套的内部或外部，用于将湿气引导到水套，以除去 来自潮湿空气的水分。

    PLANT CULTIVATION SYSTEM
    8.
    发明申请
    PLANT CULTIVATION SYSTEM 审中-公开
    植物生长系统

    公开(公告)号：US20130305601A1

    公开(公告)日：2013-11-21

    申请号：US13398155

    申请日：2012-02-16

    申请人： Young Hwan PARK

    发明人： Young Hwan PARK

    IPC分类号： A01G31/04 ,  A01G9/14

    CPC分类号： A01G31/045 ,  A01G9/14 ,  A01G31/04 ,  A01G31/042 ,  Y02P60/216

    摘要： The plant cultivation system includes: a circulatory system including axises installed in a corresponding portion of a frame installed in a cultivation room; chain gear axis-installed in the axises respectively; a left and a right chains; and a deduction motor connected and installed onto any axis of the axises; cultivating pot members including a can body, and a hook plate, fixed to left and right ends of the upper surface of the can body; and for moving and circulating in the inner space of the cultivation room by rotatably installing as hanging between the left and a right chains by the left and right hook axises and the hook plate; a medicinal fluid supplier; and an air blower, installed in the cultivation room.

    摘要翻译： 植物栽培系统包括：循环系统，其包括安装在栽培室中的框架的相应部分中的轴线; 链齿轮轴分别安装在轴上; 左，右链; 和连接并安装在轴线的任何轴上的扣除马达; 培养罐体，其包括罐体和钩板，固定在罐体上表面的左端和右端; 并且通过左右钩轴和钩板可旋转地安装在左链和右链之间，在培养室的内部空间中移动和循环; 药液供应商; 和一个安装在培养室内的鼓风机。

    APPARATUS FOR TWO-WAY TRACING AND CONDENSING SUNLIGHT OF ROOF INSTALLATION TYPE
    9.
    发明申请
    APPARATUS FOR TWO-WAY TRACING AND CONDENSING SUNLIGHT OF ROOF INSTALLATION TYPE 审中-公开
    双向安装方式的双向跟踪和冷凝装置

    公开(公告)号：US20100307564A1

    公开(公告)日：2010-12-09

    申请号：US12564669

    申请日：2009-09-22

    申请人： Young Hwan PARK

    发明人： Young Hwan PARK

    IPC分类号： H01L31/052

    CPC分类号： F24S30/425 ,  F24S20/67 ,  F24S2030/131 ,  F24S2030/134 ,  F24S2030/136 ,  Y02B10/20 ,  Y02E10/47

    摘要： The direction of sunlight is tracked according to variations of the altitude of the sun to maximize condensing efficiency. An apparatus for tracking and condensing sunlight includes a horizontal truss, a roof truss forming a triangular structure inclined to both sides of the horizontal truss, and a hinge formed on a top of the roof truss. Solar module plates are formed on both inclined surfaces of the roof truss to condense sunlight and interoperate with each other in a lateral direction. A driving means supports lower portions of the solar module plates, and moves the lower portions thereof so the solar module plates can pivot in both left and right directions around the hinge. The apparatus tracks sunlight and pivots the solar module plates to maximize condensing efficiency, improves energy production efficiency by using a roof area, and firmly fixes the solar module plate to the roof.

    摘要翻译： 根据太阳高度的变化跟踪阳光的方向，以最大限度地提高冷凝效率。 用于跟踪和冷凝阳光的装置包括水平桁架，形成倾斜于水平桁架两侧的三角形结构的屋顶桁架以及形成在屋顶桁架顶部上的铰链。 太阳能组件板形成在屋顶桁架的两个倾斜表面上，以使太阳光聚焦并且在横向上彼此互操作。 驱动装置支撑太阳能模块板的下部，并移动其下部，使得太阳能模块板可以围绕铰链在左右两个方向上枢转。 该设备跟踪太阳​​光并枢转太阳能模块板以最大化冷凝效率，通过使用屋顶区域提高能源生产效率，并将太阳能模块板牢固地固定在屋顶上。