公开(公告)号：US5374575A

公开(公告)日：1994-12-20

申请号：US156462

申请日：1993-11-23

申请人： Young K. Kim ,  Kyung S. Kim ,  Min H. Park

发明人： Young K. Kim ,  Kyung S. Kim ,  Min H. Park

IPC分类号： H01L21/336 ,  H01L29/423 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L29/66583 ,  H01L29/42368 ,  H01L29/66492 ,  H01L29/7836 ,  H01L29/66537

摘要： A method for fabricating an LDD MOS transistor having an improved structure capable of simplifying the fabrication and improving characteristics of the transistor. The methods includes the steps of forming a field oxide film for an active region isolation on a silicon substrate, thickly depositing an oxide film and etching the thick oxide film to form a first opening over an active region, forming side wall spacers in the first opening, implanting p type impurity ions in the silicon substrate through the first opening to form a channel region, filling the first opening with a first polysilicon film, removing the spacers to form second openings respectively in both sides of the first polysilicon film, implanting n type impurity ions in the silicon substrate through the second openings to form low concentration source and drain regions respectively disposed adjacent to both lateral ends of the channel region, removing the first polysilicon film to form a third opening, growing an oxide film over the resulting structure to form a gate oxide film, filling the third opening with a second polysilicon film, patterning the gate oxide film, and implanting n type impurity ions in the silicon substrate to form high concentration source and drain regions respectively disposed adjacent to the low concentration source and drain regions.

摘要翻译： 一种制造具有能够简化晶体管的制造和改善特性的改进结构的LDD MOS晶体管的方法。 所述方法包括以下步骤：在硅衬底上形成用于有源区隔离的场氧化物膜，厚度沉积氧化膜并蚀刻厚氧化物膜以在有源区上形成第一开口，在第一开口中形成侧壁间隔物 通过所述第一开口在所述硅衬底中注入p型杂质离子以形成沟道区，用第一多晶硅膜填充所述第一开口，移除所述间隔物以分别在所述第一多晶硅膜的两侧形成第二开口，将n型 通过第二开口在硅衬底中形成杂质离子，以形成分别邻近通道区两个侧端设置的低浓度源极和漏极区域，去除第一多晶硅膜以形成第三个开口，在所得到的结构上生长氧化膜 形成栅极氧化膜，用第二多晶硅膜填充第三开口，图案化栅极氧化膜并植入 在硅衬底中形成n型杂质离子，以形成分别设置在低浓度源极和漏极区附近的高浓度源极和漏极区域。

公开(公告)号：US5504027A

公开(公告)日：1996-04-02

申请号：US421998

申请日：1995-04-14

申请人： Jae S. Jeong ,  Min H. Park

发明人： Jae S. Jeong ,  Min H. Park

IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L27/12

CPC分类号： H01L27/10861 ,  H01L27/10835 ,  H01L27/1203

摘要： A method for fabricating a semiconductor memory device including a matrix of memory cells each constituted by one transistor and one capacitor and capable of obtaining a large capacitance for achieving a high integration and yet maintaining superior characteristics of its elements. The method includes the steps of: (a) forming a transistor gate electrode in a portion of an insulating layer formed over a semiconductor substrate, in a buried manner; (b) forming a trench in the semiconductor substrate through a portion of the insulating layer; and (c) forming a transistor channel region, a source, a drain and a capacitor storage node, as a single layer, over a region defined over a transistor gate electrode-buried portion of the insulating layer and a region defined in the trench. Thereby a source, a drain and a gate channel of each transistor and a capacitor storage node are formed by a single layer. With this structure, a minimum information transmitting path is obtained, thereby enabling the overall structure and the fabrication therefor to be simplified. Furthermore, this method makes it easy to form an active region where elements are formed, without using an element isolation process, and thus overall fabrication becomes simplified.

摘要翻译： 一种制造半导体存储器件的方法，包括由一个晶体管和一个电容器构成的存储单元的矩阵，并且能够获得用于实现高集成度并且保持其元件的优异特性的大电容。 该方法包括以下步骤：（a）以掩埋的方式在半导体衬底上形成的绝缘层的一部分中形成晶体管栅电极; （b）通过所述绝缘层的一部分在所述半导体衬底中形成沟槽; 以及（c）在限定在绝缘层的晶体管栅极电极掩埋部分上的区域和在沟槽中限定的区域中形成作为单层的晶体管沟道区，源极，漏极和电容器存储节点。 因此，每个晶体管的源极，漏极和栅极沟道以及电容器存储节点由单层形成。 利用该结构，获得最小信息传送路径，从而能够简化整体结构及其制造。 此外，该方法使得容易形成元件形成的有源区，而不使用元件隔离工艺，因此整体制造变得简单。

公开(公告)号：US5442584A

公开(公告)日：1995-08-15

申请号：US121759

申请日：1993-09-14

申请人： Jae S. Jeong ,  Min H. Park

发明人： Jae S. Jeong ,  Min H. Park

IPC分类号： H01L21/8242 ,  H01L27/108 ,  H01L27/12 ,  H01L21/76

CPC分类号： H01L27/10861 ,  H01L27/10835 ,  H01L27/1203

摘要： A DRAM cell and a method for fabricating the same capable of obtaining a large capacitance for achieving a high integration and yet maintaining superior characteristics of elements. A capacitor structure is provided, which includes a common storage node formed at the inner wall of a trench, and two plate electrodes connected to each other in parallel, that is, a substrate and a polysilicon layer formed over the storage node via a second dielectric film and connected to the substrate in parallel. With such a capacitor structure, the capacitance per unit capacitor area can be maximized. A source, a drain and a gate channel of each transistor and a capacitor storage node are formed by a single layer. With this structure, a minimum information transmitting path is obtained, thereby enabling the overall structure and the fabrication therefor to be simplified. Furthermore, the present invention makes it easy to form an active region where elements are formed, without using an element isolation process. Accordingly, overall fabrication becomes simplified.

摘要翻译： 一种DRAM单元及其制造方法，其能够获得大的电容以实现高集成度并且保持元件的优异特性。 提供了一种电容器结构，其包括形成在沟槽的内壁处的公共存储节点和并联连接的两个平板电极，即通过第二电介质在存储节点上形成的衬底和多晶硅层 并且并联连接到基板。 通过这种电容器结构，可以使每单位电容器面积的电容最大化。 每个晶体管的源极，漏极和栅极沟道以及电容器存储节点由单层形成。 利用该结构，获得最小信息传送路径，从而能够简化整体结构及其制造。 此外，本发明使得容易形成元件形成的有源区，而不使用元件隔离工艺。 因此，整体制造变得简单。

公开(公告)号：US06272697B1

公开(公告)日：2001-08-14

申请号：US09594924

申请日：2000-06-15

申请人： Min H. Park

发明人： Min H. Park

IPC分类号： A61H3306

CPC分类号： A61H33/06 ,  A61H2033/061 ,  A61H2035/004 ,  A61H2203/0443

摘要： A lie-down personal sauna comprises a base plate having a substantially middle portion, a first cover having a front edge and a bottom edge, a second cover having a lower edge, a rear edge and a cutout, a hingedly attaching member, and a heating member. The bottom edge is attached to the base plate so that the first cover partially covers the base plate. The hingedly attaching member attaches the second cover to either the first cover or the substantially middle portion of the base plate so that the second cover can be moved from an open position to a closed position through the hingedly attaching member. The base plate, the first cover and the second cover form a substantially enclosed cavity when the second cover is at the closed position, and the user is received into the cavity at the open position of the second cover and maintained within the personal sauna under the closed position of the second cover.

摘要翻译： 躺椅式个人桑拿包括具有大致中间部分的基板，具有前边缘和底边缘的第一盖，具有下边缘的第二盖，后边缘和切口，铰接安装件和 加热构件。 底边缘附接到基板，使得第一盖部分地覆盖基板。 铰链安装部件将第二盖子附接到基板的第一盖或大致中间部分，使得第二盖可以通过铰接安装部件从打开位置移动到关闭位置。 当第二盖处于关闭位置时，基板，第一盖和第二盖形成基本上封闭的腔，并且使用者在第二盖的打开位置处被接纳到空腔中并且保持在个人桑拿的下面 第二盖的封闭位置。

公开(公告)号：USD433144S

公开(公告)日：2000-10-31

申请号：US117906

申请日：2000-02-01

申请人： Min H. Park

设计人： Min H. Park