公开(公告)号：US20120045358A1

公开(公告)日：2012-02-23

申请号：US13318129

申请日：2010-04-27

申请人： Young Kook Lee ,  Yeon Seung Jung ,  Sin Gon Kang ,  Dong Joon Min

发明人： Young Kook Lee ,  Yeon Seung Jung ,  Sin Gon Kang ,  Dong Joon Min

IPC分类号： C22C38/04 ,  C22C38/12 ,  C22C33/04 ,  C22C38/14 ,  C22C38/38 ,  C22C38/06 ,  C22C38/24 ,  C22C38/26 ,  C22C38/28 ,  C22C38/34 ,  C22C38/18 ,  C22C38/02

CPC分类号： C21D6/005 ,  C21D8/0205 ,  C21D9/46 ,  C21D2211/001 ,  C21D2211/004 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/06 ,  C22C38/34 ,  C22C38/38

摘要： Provided is a high manganese nitrogen-containing steel sheet. The high manganese nitrogen-containing steel sheet according to the present invention comprises 0.5 to 1.0 wt % of carbon, 10 to 20 wt % of manganese, 0.02 to 0.3 wt % of nitrogen, with a remainder of Fe and unavoidable impurities. The high manganese nitrogen-containing steel sheet according to the present invention produces an austenite phase at room temperature, in which the stacking fault energy is effectively controlled by adding chrome and nitrogen. Accordingly, the high manganese nitrogen-containing steel sheet of the present invention produces a mechanical twin during the plastic deformation of the steel sheet, thereby increasing the work hardening rate, tensile strength, and workability.

摘要翻译： 提供高锰含量钢板。 根据本发明的高锰含量钢板包含0.5〜1.0重量％的碳，10〜20重量％的锰，0.02〜0.3重量％的氮，余量为Fe和不可避免的杂质。 根据本发明的高锰含量钢板在室温下产生奥氏体相，其中通过添加铬和氮有效地控制堆垛层错能。 因此，本发明的高锰含量钢板在钢板的塑性变形过程中产生机械双体，从而提高加工硬化率，拉伸强度和加工性。

公开(公告)号：US08487445B1

公开(公告)日：2013-07-16

申请号：US12898192

申请日：2010-10-05

申请人： Won Chul Do ,  Yeon Seung Jung ,  Yong Jae Ko

发明人： Won Chul Do ,  Yeon Seung Jung ,  Yong Jae Ko

IPC分类号： H01L23/48

CPC分类号： H01L21/768 ,  H01L21/76898 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05551 ,  H01L2224/0557 ,  H01L2224/10126 ,  H01L2224/1146 ,  H01L2224/13007 ,  H01L2224/13009 ,  H01L2224/13022 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/13582 ,  H01L2224/13583 ,  H01L2224/13611 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/14181 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2224/05552

摘要： A semiconductor device and a manufacturing method thereof are provided. In one embodiment of the manufacturing method of the semiconductor device, a through electrode is formed on a semiconductor die, and a dielectric layer such as a photopolymer is coated on the through electrode to cover the through electrode. Under exposure is performed on the dielectric layer, thereby partially removing the dielectric layer by development. As a result, a top end of the through electrode is exposed to the outside or protrudes through the dielectric layer. The dielectric layer remaining on the top end of the through electrode may be removed by performing a plasma descum process, if needed.

摘要翻译： 提供了一种半导体器件及其制造方法。 在半导体器件的制造方法的一个实施例中，在半导体管芯上形成通孔，并且在贯通电极上涂覆诸如光聚合物的电介质层以覆盖通孔。 在介电层上进行暴露曝光，从而通过显影来部分去除电介质层。 结果，通孔电极的顶端暴露于外部或突出穿过电介质层。 如果需要，可以通过执行等离子体除去过程来除去残留在通孔的顶端的电介质层。