公开(公告)号：US07687837B2

公开(公告)日：2010-03-30

申请号：US11542340

申请日：2006-10-03

申请人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park ,  Jin-Hyeong Park ,  Jeong-Hoon Bae ,  Jung-Ho Park

发明人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park ,  Jin-Hyeong Park ,  Jeong-Hoon Bae ,  Jung-Ho Park

IPC分类号： H01L31/113

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.

摘要翻译： 图像传感器包括其中限定有活性像素传感器区域的基板，形成在有源像素传感器区域中的多个第一导电型光电二极管和形成在有源像素传感器区域中的第一导电类型的第一深阱， 不包括多个第一导电型光电二极管。 此外，第一个深阱电连接到正电压。

公开(公告)号：US20070075338A1

公开(公告)日：2007-04-05

申请号：US11542340

申请日：2006-10-03

申请人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park ,  Jin-Hyeong Park ,  Jeong-Hoon Bae ,  Jung-Ho Park

发明人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park ,  Jin-Hyeong Park ,  Jeong-Hoon Bae ,  Jung-Ho Park

IPC分类号： H01L29/768

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

摘要： An image sensor includes a substrate having an active pixel sensor region defined therein, a plurality of first conductivity type photodiodes formed in the active pixel sensor region and a first conductivity-type first deep well formed in the active pixel sensor region in a location which does not include the plurality of the first conductivity-type photodiodes. Moreover, the first deep well is electrically connected to a positive voltage.

摘要翻译： 图像传感器包括其中限定有活性像素传感器区域的基板，形成在有源像素传感器区域中的多个第一导电型光电二极管和形成在有源像素传感器区域中的第一导电类型的第一深阱， 不包括多个第一导电型光电二极管。 此外，第一个深阱电连接到正电压。

公开(公告)号：US20110204468A1

公开(公告)日：2011-08-25

申请号：US13064914

申请日：2011-04-26

申请人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

发明人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

公开(公告)号：US20070161140A1

公开(公告)日：2007-07-12

申请号：US11651542

申请日：2007-01-10

申请人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

发明人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

IPC分类号： H01L21/00

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

摘要翻译： 示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。 示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成 在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。

公开(公告)号：US07955924B2

公开(公告)日：2011-06-07

申请号：US11651542

申请日：2007-01-10

申请人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

发明人： Jae-ho Song ,  Chan Park ,  Young-hoon Park ,  Sang-il Jung ,  Jong-wook Hong ,  Keo-sung Park ,  Eun-soo Kim ,  Won-je Park ,  Jin-Hyeong Park ,  Dae-cheol Seong ,  Won-jeong Lee ,  Pu-ra Kim

IPC分类号： H01L21/8238

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14689

摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

摘要翻译： 示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。 示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成 在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。

公开(公告)号：US07524770B2

公开(公告)日：2009-04-28

申请号：US11287362

申请日：2005-11-28

申请人： Jin-Hyeong Park

发明人： Jin-Hyeong Park

IPC分类号： H01L21/302

CPC分类号： H01L27/14627 ,  H01L27/14685

摘要： In one aspect, an image sensor is provided which includes an interlayer insulation film formed over a substrate including a light receiving device, a color filter formed over the interlayer insulation film, a protection film having a flat top face formed over the interlayer insulation film and the color filter, a buffer film having a convex top face formed over the protection film, and a microlens formed on the convex top face of the buffer film. The microlens has a refractive index which is greater than a refractive index of the buffer film and has a convex top face and a concave bottom face, where the concave bottom face of the microlens contacts the convex top face of the buffer film.

摘要翻译： 在一个方面，提供了一种图像传感器，其包括形成在包括光接收装置的基板上的层间绝缘膜，在层间绝缘膜上形成的滤色器，在层间绝缘膜上形成有平坦顶面的保护膜，以及 滤色器，在保护膜上形成有凸顶面的缓冲膜，以及形成在缓冲膜的凸顶面上的微透镜。 微透镜具有大于缓冲膜的折射率的折射率，并且具有凸起的顶面和凹面，其中微透镜的凹面的底面与缓冲膜的凸顶面接触。

公开(公告)号：US20060108614A1

公开(公告)日：2006-05-25

申请号：US11284883

申请日：2005-11-23

申请人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

发明人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

IPC分类号： H01L29/768

CPC分类号： H04N5/357 ,  H01L27/14609

摘要： A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器包括响应于其上的入射光而产生电荷的光电二极管区域。 CMOS图像传感器还包括第一浮动扩散层，其适于响应于全局转移信号从光电二极管区域接收电荷，以及第二浮动扩散区域，其适于响应于第一浮动扩散区域接收来自第一浮动扩散区域的电荷 像素选择信号。

公开(公告)号：US07652312B2

公开(公告)日：2010-01-26

申请号：US12062552

申请日：2008-04-04

申请人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

发明人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

IPC分类号： H01L31/062

CPC分类号： H04N5/357 ,  H01L27/14609

摘要： A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器包括响应于其上的入射光而产生电荷的光电二极管区域。 CMOS图像传感器还包括第一浮动扩散层，其适于响应于全局转移信号从光电二极管区域接收电荷，以及第二浮动扩散区域，其适于响应于第一浮动扩散区域接收来自第一浮动扩散区域的电荷 像素选择信号。

公开(公告)号：US07842980B2

公开(公告)日：2010-11-30

申请号：US12402570

申请日：2009-03-12

申请人： Jin-Hyeong Park

发明人： Jin-Hyeong Park

IPC分类号： H01L27/148

CPC分类号： H01L27/14627 ,  H01L27/14685

摘要： An image sensor includes a light receiving device in a substrate, a color filter over the light receiving device, a buffer film over the color filter, and a microlens on the buffer film. The microlens has a concave bottom face and a convex top face. The buffer film has a substantially flat top outside the microlens and has a convex top face below the microlens.

摘要翻译： 图像传感器包括基板中的光接收装置，光接收装置上的滤色器，滤色器上的缓冲膜以及缓冲膜上的微透镜。 微透镜具有凹的底面和凸的顶面。 缓冲膜在微透镜外部具有基本平坦的顶部，并且在微透镜下面具有凸起的顶面。

公开(公告)号：US07378694B2

公开(公告)日：2008-05-27

申请号：US11284883

申请日：2005-11-23

申请人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

发明人： Duk-Min Yi ,  Jong-Chae Kim ,  Jin-Hyeong Park

IPC分类号： H01L31/062

CPC分类号： H04N5/357 ,  H01L27/14609

摘要： A complementary metal-oxide semiconductor (CMOS) image sensor comprises a photodiode region generating electrical charges in response to incident light thereon. The CMOS image sensor further comprises a first floating diffusion layer adapted to receive the electrical charges from the photodiode region in response to a global transfer signal and a second floating diffusion region adapted to receive the electrical charges from the first floating diffusion region in response to a pixel selection signal.

摘要翻译： 互补金属氧化物半导体（CMOS）图像传感器包括响应于其上的入射光而产生电荷的光电二极管区域。 CMOS图像传感器还包括第一浮动扩散层，其适于响应于全局转移信号从光电二极管区域接收电荷，以及第二浮动扩散区域，其适于响应于第一浮动扩散区域接收来自第一浮动扩散区域的电荷 像素选择信号。