利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

101 条记录 (耗时 0.041 秒)

    METHODS OF FABRICATING AN IMAGE SENSOR
    3.
    发明申请
    METHODS OF FABRICATING AN IMAGE SENSOR 失效
    制作图像传感器的方法

    公开(公告)号：US20070054434A1

    公开(公告)日：2007-03-08

    申请号：US11464244

    申请日：2006-08-14

    申请人： Won-Je Park ,  Jae-Ho Song ,  Young-Hoon Park

    发明人： Won-Je Park ,  Jae-Ho Song ,  Young-Hoon Park

    IPC分类号： H01L21/00

    CPC分类号： H01L27/14683 ,  H01L27/14603 ,  H01L27/14643

    摘要： Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a nitrogen enhanced atmosphere and a second gate electrode layer in a second region of the semiconductor substrate. The methods also include patterning the first gate electrode layer and the first gate insulation layer of the first region to form a first gate pattern and patterning the second gate electrode layer and the second gate insulation layer of the second region to form a second gate pattern.

    摘要翻译： 提供制造图像传感器的方法。 这种方法的实施例可以包括在半导体衬底的第一区域和第一栅极电极层中形成第一栅极绝缘层，以覆盖第一栅极绝缘层并在氮气增强气氛中形成第二栅极绝缘层和第二栅极 在半导体衬底的第二区域中的电极层。 所述方法还包括图案化第一区域的第一栅极电极层和第一栅极绝缘层以形成第一栅极图案，并且使第二栅极电极层和第二栅极绝缘层图案化以形成第二栅极图案。

    Image sensor with self-boosting and methods of operating and fabricating the same
    4.
    发明申请
    Image sensor with self-boosting and methods of operating and fabricating the same 有权
    具有自增强功能的图像传感器及其操作和制造方法

    公开(公告)号：US20060157761A1

    公开(公告)日：2006-07-20

    申请号：US11335925

    申请日：2006-01-18

    申请人： Young-Hoon Park ,  Won-Je Park ,  Tae-Seok Oh ,  Jae-Ho Song

    发明人： Young-Hoon Park ,  Won-Je Park ,  Tae-Seok Oh ,  Jae-Ho Song

    IPC分类号： H01L31/062

    CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14656 ,  H01L27/14687 ,  H04N5/3597 ,  H04N5/3745

    摘要： Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.

    摘要翻译： 公开了包括各自具有传输晶体管和驱动晶体管的像素的图像传感器（例如，CMOS图像传感器），其中至少一个晶体管的栅极具有设置在其上的升压栅极，该升压栅极包括导电膜图案， 插入绝缘膜。 因此，施加到升压栅极的电压电容耦合到传输晶体管的传输栅极和驱动晶体管的驱动栅极中的至少一个。 因此，转移栅极被提供有转印电压和升压栅极耦合电压的总和，并且不需要为图像传感器提供高电压发生器。 如果将这样的耦合电压施加到驱动晶体管的驱动栅极，则可以增强动态动作范围。

    Image sensor and related fabrication method
    5.
    发明授权
    Image sensor and related fabrication method 失效
    图像传感器及相关制造方法

    公开(公告)号：US07598136B2

    公开(公告)日：2009-10-06

    申请号：US11385714

    申请日：2006-03-22

    申请人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park

    发明人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park

    IPC分类号： H01L21/8238

    CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

    摘要： An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of fabricating the image sensor is also provided. The method comprises preparing a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, doping the polysilicon layer with impurity ions, and patterning the polysilicon layer.

    摘要翻译： 提供了包括具有均匀杂质掺杂分布的传输栅电极的图像传感器。 图像传感器还包括包括像素区域的半导体衬底，其中像素区域包括有源区域，并且传输栅极电极设置在有源区域上。 还提供了一种制造图像传感器的方法。 该方法包括制备半导体衬底，在半导体衬底上形成多晶硅层，用杂质离子掺杂多晶硅层，并构图多晶硅层。

    Image sensor with self-boosting transfer transistor gate and methods of operating and fabricating the same
    6.
    发明授权
    Image sensor with self-boosting transfer transistor gate and methods of operating and fabricating the same 有权
    具有自增强传输晶体管栅极的图像传感器及其操作和制造方法

    公开(公告)号：US07973346B2

    公开(公告)日：2011-07-05

    申请号：US11335925

    申请日：2006-01-18

    申请人： Young-Hoon Park ,  Won-Je Park ,  Tae-Seok Oh ,  Jae-Ho Song

    发明人： Young-Hoon Park ,  Won-Je Park ,  Tae-Seok Oh ,  Jae-Ho Song

    IPC分类号： H01L31/062 ,  H01L31/06

    CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14656 ,  H01L27/14687 ,  H04N5/3597 ,  H04N5/3745

    摘要： Disclosed is a image sensor (e.g., a CMOS image sensor) including pixels each having a transfer transistor and a drive transistor, in which the gate of at least one of the transistors has a boosting gate disposed over it comprised of a conductive film pattern with interposing an insulation film. Thus, a voltage applied to the boosting gate is capacitively coupled to at least one of the transfer gate of the transfer transistor and a drive gate of the drive transistor. The transfer gate is supplied with the sum of the transfer voltage and the boosting gate-coupling voltage as a result and there is no need for providing a high voltage generator for the image sensor. The dynamic range of operation may be enhanced if such a coupling voltage is applied to the drive gate of the drive transistor.

    摘要翻译： 公开了包括各自具有传输晶体管和驱动晶体管的像素的图像传感器（例如，CMOS图像传感器），其中至少一个晶体管的栅极具有设置在其上的升压栅极，该升压栅极包括导电膜图案， 插入绝缘膜。 因此，施加到升压栅极的电压电容耦合到传输晶体管的传输栅极和驱动晶体管的驱动栅极中的至少一个。 因此，转移栅极被提供有转印电压和升压栅极耦合电压的总和，并且不需要为图像传感器提供高电压发生器。 如果将这样的耦合电压施加到驱动晶体管的驱动栅极，则可以增强动态动作范围。

    Methods of fabricating an image sensor
    7.
    发明授权
    Methods of fabricating an image sensor 失效
    制作图像传感器的方法

    公开(公告)号：US07462520B2

    公开(公告)日：2008-12-09

    申请号：US11464244

    申请日：2006-08-14

    申请人： Won-Je Park ,  Jae-Ho Song ,  Young-Hoon Park

    发明人： Won-Je Park ,  Jae-Ho Song ,  Young-Hoon Park

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14683 ,  H01L27/14603 ,  H01L27/14643

    摘要： Provided are methods of fabricating an image sensor. Embodiments of such methods can include forming a first gate insulation layer in a first region of a semiconductor substrate and a first gate electrode layer, to cover the first gate insulation layer and forming a second gate insulation layer within a nitrogen enhanced atmosphere and a second gate electrode layer in a second region of the semiconductor substrate. The methods also include patterning the first gate electrode layer and the first gate insulation layer of the first region to form a first gate pattern and patterning the second gate electrode layer and the second gate insulation layer of the second region to form a second gate pattern.

    摘要翻译： 提供制造图像传感器的方法。 这种方法的实施例可以包括在半导体衬底的第一区域和第一栅极电极层中形成第一栅极绝缘层，以覆盖第一栅极绝缘层并在氮气增强气氛中形成第二栅极绝缘层和第二栅极 在半导体衬底的第二区域中的电极层。 所述方法还包括图案化第一区域的第一栅极电极层和第一栅极绝缘层以形成第一栅极图案，并且使第二栅极电极层和第二栅极绝缘层图案化以形成第二栅极图案。

    Image sensor and related fabrication method
    8.
    发明申请
    Image sensor and related fabrication method 失效
    图像传感器及相关制造方法

    公开(公告)号：US20070007611A1

    公开(公告)日：2007-01-11

    申请号：US11385714

    申请日：2006-03-22

    申请人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park

    发明人： Young-Hoon Park ,  Jae-Ho Song ,  Won-Je Park

    IPC分类号： H01L27/14

    CPC分类号： H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

    摘要： An image sensor comprising a transfer gate electrode having a uniform impurity doping distribution is provided. The image sensor further comprises a semiconductor substrate comprising a pixel area, wherein the pixel area comprises an active region and the transfer gate electrode is disposed on the active region. A method of fabricating the image sensor is also provided. The method comprises preparing a semiconductor substrate, forming a polysilicon layer on the semiconductor substrate, doping the polysilicon layer with impurity ions, and patterning the polysilicon layer.

    摘要翻译： 提供了包括具有均匀杂质掺杂分布的传输栅电极的图像传感器。 图像传感器还包括包括像素区域的半导体衬底，其中像素区域包括有源区域，并且传输栅极电极设置在有源区域上。 还提供了一种制造图像传感器的方法。 该方法包括制备半导体衬底，在半导体衬底上形成多晶硅层，用杂质离子掺杂多晶硅层，并构图多晶硅层。

    CMOS image sensor having a crosstalk prevention structure and method of manufacturing the same
    9.
    发明授权
    CMOS image sensor having a crosstalk prevention structure and method of manufacturing the same 有权
    具有串扰防止结构的CMOS图像传感器及其制造方法

    公开(公告)号：US08354292B2

    公开(公告)日：2013-01-15

    申请号：US13413137

    申请日：2012-03-06

    申请人： Won-Je Park ,  Young-Hoon Park ,  Ui-Sik Kim ,  Dae-Cheol Seong ,  Yeo-Ju Yoon ,  Bo-Bae Kang

    发明人： Won-Je Park ,  Young-Hoon Park ,  Ui-Sik Kim ,  Dae-Cheol Seong ,  Yeo-Ju Yoon ,  Bo-Bae Kang

    IPC分类号： H01L21/339

    CPC分类号： H01L27/1463 ,  H01L27/14603

    摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.

    摘要翻译： 在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。 在P型外延层中形成深P +型阱层。 在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。 三重阱形成在光电二极管区域和外围电路区域中。 三阱用于形成具有不同工作电压的PMOS和NMOS。 在光电二极管区域中形成隔离区。 光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。

    CMOS IMAGE SENSOR HAVING A CROSSTALK PREVENTION STRUCTURE AND METHOD OF MANUFACTUREING THE SAME
    10.
    发明申请
    CMOS IMAGE SENSOR HAVING A CROSSTALK PREVENTION STRUCTURE AND METHOD OF MANUFACTUREING THE SAME 有权
    具有CROSSTALK预防结构的CMOS图像传感器及其制造方法

    公开(公告)号：US20120164783A1

    公开(公告)日：2012-06-28

    申请号：US13413137

    申请日：2012-03-06

    申请人： Won-Je Park ,  Young-Hoon Park ,  Ui-Sik Kim ,  Dae-Cheol Seong ,  Yeo-Ju Yoon ,  Bo-Bae Kang

    发明人： Won-Je Park ,  Young-Hoon Park ,  Ui-Sik Kim ,  Dae-Cheol Seong ,  Yeo-Ju Yoon ,  Bo-Bae Kang

    IPC分类号： H01L31/18

    CPC分类号： H01L27/1463 ,  H01L27/14603

    摘要： In a method of manufacturing a CMOS image sensor, a P type epitaxial layer is formed on an N type substrate. A deep P+ type well layer is formed in the P type epitaxial layer. An N type deep guardring well is formed in a photodiode guardring region. The N type deep guardring region makes contact with the N type substrate and also be connected with an operational voltage terminal. A triple well is formed in a photodiode region and a peripheral circuit region. The triple well is used for forming a PMOS and an NMOS having different operational voltages. An isolation region is formed in the photodiode region. The isolation region in the photodiode region has a depth different from a depth of an isolation region in the peripheral circuit region.

    摘要翻译： 在CMOS图像传感器的制造方法中，在N型基板上形成P型外延层。 在P型外延层中形成深P +型阱层。 在光电二极管防护区域内形成N型深护卫阱。 N型深护卫区与N型基板接触，并与工作电压端子连接。 三重阱形成在光电二极管区域和外围电路区域中。 三阱用于形成具有不同工作电压的PMOS和NMOS。 在光电二极管区域中形成隔离区。 光电二极管区域中的隔离区域具有与外围电路区域中的隔离区域的深度不同的深度。