Method of fabricating semiconductor device including a recessed channel
    1.
    发明授权
    Method of fabricating semiconductor device including a recessed channel 有权
    制造包括凹陷通道的半导体器件的方法

    公开(公告)号:US08835257B2

    公开(公告)日:2014-09-16

    申请号:US13312176

    申请日:2011-12-06

    摘要: A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

    摘要翻译: 一种包括形成隔离沟槽的方法; 在隔离槽上形成第一和第二衬垫; 将绝缘沟槽填充绝缘材料以形成隔离区域和有源区域; 形成包括隔离区域的第一区域的初步栅极沟槽,以露出第一衬垫,第二衬垫和绝缘材料,以及横跨有源区域的第二区域以暴露衬底的一部分,第一区域具有第一 侧壁具有平面形状,并且所述第二区域具有第二侧壁,所述第二侧壁具有凹形中心区域,使得所述第一和第二区域之间的界面具有尖锐部分; 去除由所述第一区域暴露的所述第一衬垫的一部分以形成具有所述尖部突出的第一深度的凹陷; 去除尖部以形成栅沟; 并形成栅电极。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING A RECESSED CHANNEL
    2.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING A RECESSED CHANNEL 有权
    制造包含通道的半导体器件的方法

    公开(公告)号:US20120231605A1

    公开(公告)日:2012-09-13

    申请号:US13312176

    申请日:2011-12-06

    IPC分类号: H01L21/762

    摘要: A method including forming an isolation trench; forming first and second liners on the isolation trench; filling the isolation trench an insulating material to form an isolation region and an active region; forming a preliminary gate trench including a first region across the isolation region to expose the first liner, the second liner, and the insulating material, and a second region across the active region to expose a portion of the substrate, the first region having a first sidewall with a planar shape, and the second region having a second sidewall with a concave central area such that an interface between the first and second regions has a pointed portion; removing a portion of the first liner exposed by the first region to form a dent having a first depth by which the pointed portion protrudes; removing the pointed portion to form a gate trench; and forming a gate electrode.

    摘要翻译: 一种包括形成隔离沟槽的方法; 在隔离沟槽上形成第一和第二衬垫; 将绝缘沟槽填充绝缘材料以形成隔离区域和有源区域; 形成包括隔离区域的第一区域的初步栅极沟槽,以露出第一衬垫,第二衬垫和绝缘材料,以及横跨有源区域的第二区域以暴露衬底的一部分,第一区域具有第一 侧壁具有平面形状,并且所述第二区域具有第二侧壁,所述第二侧壁具有凹形中心区域,使得所述第一和第二区域之间的界面具有尖锐部分; 去除由所述第一区域暴露的所述第一衬垫的一部分以形成具有所述尖部突出的第一深度的凹陷; 去除尖部以形成栅沟; 并形成栅电极。