利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

5 条记录 (耗时 0.02 秒)

    Nonvolatile memory devices having variable-resistance memory cells and methods of programming the same
    3.
    发明授权
    Nonvolatile memory devices having variable-resistance memory cells and methods of programming the same 有权
    具有可变电阻存储单元的非易失性存储器件及其编程方法

    公开(公告)号：US08199603B2

    公开(公告)日：2012-06-12

    申请号：US12498549

    申请日：2009-07-07

    申请人： Won-Ryul Chung ,  Byung-Gil Choi ,  In-Cheol Shin ,  Ki-Won Lim

    发明人： Won-Ryul Chung ,  Byung-Gil Choi ,  In-Cheol Shin ,  Ki-Won Lim

    IPC分类号： G11C8/00

    CPC分类号： G11C13/0038 ,  G11C8/10 ,  G11C13/0004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/72 ,  G11C2213/79

    摘要： Nonvolatile memory devices include an array of variable-resistance memory cells and a write driver electrically coupled to the array. The write driver is configured to drive a bit line in the array of variable-resistance memory cells with a stair-step sequence of at least two unequal bit line voltages during an operation to program a variable-resistance memory cell in said array. This stair-step sequence of at least two unequal bit line voltages includes a precharge voltage (e.g., Vcc-Vth) at a first step and a higher boosted voltage (e.g., Vpp-Vth) at a second step that follows the first step.

    摘要翻译： 非易失性存储器件包括可变电阻存储器单元阵列和电耦合到阵列的写入驱动器。 写入驱动器被配置为在用于编程所述阵列中的可变电阻存储器单元的操作期间，在具有至少两个不相等的位线电压的阶梯序列的驱动可变电阻存储器单元阵列中的位线。 至少两个不等位线电压的阶梯级序列包括第一步骤的预充电电压（例如Vcc-Vth）和跟随第一步骤的第二步骤的较高升压电压（例如，Vpp-Vth）。

    Integrated circuit devices using fuse elements to generate an output signal that is independent of cut fuse remnants
    5.
    发明授权
    Integrated circuit devices using fuse elements to generate an output signal that is independent of cut fuse remnants 失效
    使用熔丝元件产生独立于切断的熔丝残留物的输出信号的集成电路器件

    公开(公告)号：US06201432B1

    公开(公告)日：2001-03-13

    申请号：US09315695

    申请日：1999-05-20

    申请人： Ki-Won Lim ,  Eui-Gyu Han ,  Jeong-Un Choi

    发明人： Ki-Won Lim ,  Eui-Gyu Han ,  Jeong-Un Choi

    IPC分类号： H01H3776

    CPC分类号： G11C17/18

    摘要： Integrated circuit devices include a comparator circuit and a fuse programmable input circuit. The fuse programmable input circuit generates first and second differential input signals at voltage levels that can be controlled through a pair of fuses. The comparator circuit generates an output signal based on the relative voltage levels exhibited by the first and second differential input signals. In particular, the output signal is driven to a first logic state when the voltage difference between the first and second differential input signals is positive and the output signal is driven to a second logic state, which is opposite the first logic state, when the voltage difference is negative. Because the comparator is responsive to the relative difference between the voltage levels of the first and second differential input signals and not the absolute magnitudes of the voltage levels, fuse remnants that may exist after the fuse programmable input circuit has been programmed (i.e., one or more fuses have been cut) typically do not affect the output signal.

    摘要翻译： 集成电路器件包括比较器电路和熔丝可编程输入电路。 保险丝可编程输入电路在可通过一对保险丝控制的电压电平下产生第一和第二差分输入信号。 比较器电路基于由第一和第二差分输入信号表现的相对电压电平产生输出信号。 具体地，当第一和第二差分输入信号之间的电压差为正时，输出信号被驱动到第一逻辑状态，并且当电压与第一逻辑状态相反时，输出信号被驱动到第二逻辑状态 差异为负数。 因为比较器响应于第一和第二差分输入信号的电压电平之间的相对差异而不是电压电平的绝对值，所以在熔丝可编程输入电路已被编程之后可能存在的熔丝残余物（即，一个或多个 更多的保险丝被切断）通常不影响输出信号。