-
公开(公告)号：US07936598B2
公开(公告)日：2011-05-03
申请号：US12431162
申请日：2009-04-28
申请人： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
发明人： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
摘要： A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.
摘要翻译： 一种具有铁磁自由层和铁磁性固定参考层的磁存储单元，每个具有面外磁各向异性和面外磁化取向，并可通过自旋转矩切换。 电池包括靠近自由层的铁磁辅助层，辅助层具有小于约500Oe的低磁各向异性。 辅助层可具有面内或面外各向异性。
-
公开(公告)号：US08416620B2
公开(公告)日：2013-04-09
申请号：US12943976
申请日：2010-11-11
申请人： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
发明人： Yuankai Zheng , Zheng Gao , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Haiwen Xi
IPC分类号： G11C11/15
CPC分类号： H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
摘要： A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.
摘要翻译： 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。
-
公开(公告)号：US20110058412A1
公开(公告)日：2011-03-10
申请号：US12943976
申请日：2010-11-11
申请人： Yuankai Zheng , Haiwen Xi , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Zheng Gao
发明人： Yuankai Zheng , Haiwen Xi , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Zheng Gao
CPC分类号： H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
摘要： A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.
摘要翻译： 具有铁磁自由层和铁磁性固定参考层的磁性隧道结，每个具有面外磁各向异性和面外磁化取向，所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层，辅助层具有小于700Oe的低磁各向异性，并定位成在自由层上施加磁场。
-
公开(公告)号：US20100271870A1
公开(公告)日：2010-10-28
申请号：US12431162
申请日：2009-04-28
申请人： Yuankai Zheng , Haiwen Xi , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Zheng Gao
发明人： Yuankai Zheng , Haiwen Xi , Wonjoon Jung , Xuebing Feng , Xiaohua Lou , Zheng Gao
IPC分类号： G11C11/00 , G11C11/416 , H01L29/82
CPC分类号： H01L43/02 , B82Y10/00 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F10/329 , H01F10/3295 , H01L43/08
摘要： A magnetic memory cell having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation and switchable by spin torque. The cell includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than about 500 Oe. The assist layer may have in-plane or out-of-plane anisotropy.
摘要翻译： 一种具有铁磁自由层和铁磁性固定参考层的磁存储单元，每个具有面外磁各向异性和面外磁化取向，并可通过自旋转矩切换。 电池包括靠近自由层的铁磁辅助层，辅助层具有小于约500Oe的低磁各向异性。 辅助层可具有面内或面外各向异性。
-
公开(公告)号：US20100090261A1
公开(公告)日：2010-04-15
申请号：US12425451
申请日：2009-04-17
申请人： Yuankai Zheng , Xuebing Feng , Zheng Gao
发明人： Yuankai Zheng , Xuebing Feng , Zheng Gao
CPC分类号： H01L27/222 , G11C11/161 , H01L43/08
摘要： A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.
摘要翻译： 具有具有可切换磁化取向的多层自由层的磁性堆叠，所述自由层包括第一铁磁部分和在第一部分和第二部分之间具有导电非磁性中间层的第二铁磁部分。 磁性堆栈还包括具有钉扎磁化取向的第一铁磁参考层，在自由层和第一参考层之间的第一非磁性间隔层，具有钉扎磁化取向的第二铁磁参考层和第二非磁性参考层 间隔层在自由层和第二参考层之间。
-
公开(公告)号：US20120018788A1
公开(公告)日：2012-01-26
申请号：US13248361
申请日：2011-09-29
申请人： Yuankai Zheng , Xuebing Feng , Zheng Gao
发明人： Yuankai Zheng , Xuebing Feng , Zheng Gao
IPC分类号： H01L29/82
CPC分类号： H01L27/222 , G11C11/161 , H01L43/08
摘要： A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.
摘要翻译： 具有具有可切换磁化取向的多层自由层的磁性堆叠，所述自由层包括第一铁磁部分和在第一部分和第二部分之间具有导电非磁性中间层的第二铁磁部分。 磁性堆栈还包括具有钉扎磁化取向的第一铁磁参考层，在自由层和第一参考层之间的第一非磁性间隔层，具有钉扎磁化取向的第二铁磁参考层和第二非磁性参考层 间隔层在自由层和第二参考层之间。
-
公开(公告)号：US08039913B2
公开(公告)日：2011-10-18
申请号：US12425451
申请日：2009-04-17
申请人： Yuankai Zheng , Zheng Gao , Xuebing Feng
发明人： Yuankai Zheng , Zheng Gao , Xuebing Feng
IPC分类号： H01L29/82
CPC分类号： H01L27/222 , G11C11/161 , H01L43/08
摘要： A magnetic stack with a multilayer free layer having a switchable magnetization orientation, the free layer comprising a first ferromagnetic portion and a second ferromagnetic portion with an electrically conducting non-magnetic intermediate layer between the first portion and the second portion. The magnetic stack also includes a first ferromagnetic reference layer having a pinned magnetization orientation, a first non-magnetic spacer layer between the free layer and the first reference layer, a second ferromagnetic reference layer having a pinned magnetization orientation, and a second non-magnetic spacer layer between the free layer and the second reference layer.
摘要翻译： 具有具有可切换磁化取向的多层自由层的磁性堆叠，所述自由层包括第一铁磁部分和在第一部分和第二部分之间具有导电非磁性中间层的第二铁磁部分。 磁性堆栈还包括具有钉扎磁化取向的第一铁磁参考层，在自由层和第一参考层之间的第一非磁性间隔层，具有钉扎磁化取向的第二铁磁参考层和第二非磁性参考层 间隔层在自由层和第二参考层之间。
-
公开(公告)号：US20080316631A1
公开(公告)日：2008-12-25
申请号：US11820703
申请日：2007-06-20
申请人： Kaizhong Gao , Sining Mao , Eric S. Linville , Xuebing Feng , Shaoping Li , Steven Paul Bozeman
发明人： Kaizhong Gao , Sining Mao , Eric S. Linville , Xuebing Feng , Shaoping Li , Steven Paul Bozeman
IPC分类号： G11B5/02
CPC分类号： G11B5/1278 , G11B5/02 , G11B5/3123 , G11B5/3133 , G11B2005/0002
摘要： A magnetic device includes a write element having a write element tip and a conductive coil that carries current to induce a first field in the write element. A first conductor is proximate a leading edge of the write pole tip for carrying current to generate a second field that augments the first field.
摘要翻译： 磁性装置包括具有写入元件尖端的写元件和承载电流以在写入元件中引起第一场的导电线圈。 第一导体靠近写极尖的前缘，用于承载电流以产生增大第一场的第二场。
-
公开(公告)号：US08339736B2
公开(公告)日：2012-12-25
申请号：US11820703
申请日：2007-06-20
申请人： Kaizhong Gao , Sining Mao , Eric S. Linville , Xuebing Feng , Shaoping Li , Steven Paul Bozeman
发明人： Kaizhong Gao , Sining Mao , Eric S. Linville , Xuebing Feng , Shaoping Li , Steven Paul Bozeman
IPC分类号： G11B5/17
CPC分类号： G11B5/1278 , G11B5/02 , G11B5/3123 , G11B5/3133 , G11B2005/0002
摘要： A magnetic device includes a write element having a write element tip and a conductive coil that carries current to induce a first field in the write element. A first conductor is proximate a leading edge of the write pole tip for carrying current to generate a second field that augments the first field.
摘要翻译： 磁性装置包括具有写入元件尖端的写元件和承载电流以在写入元件中引起第一场的导电线圈。 第一导体靠近写极尖的前缘，用于承载电流以产生增大第一场的第二场。
-
-
-
-
-
-
-
-
搜索结果
9 条记录 (耗时 0.023 秒)
